{"title":"A CMOS RF Transmitter For LTE Applications: Implementation and Simulation","authors":"Ebtsam Arafa, A. Zekry, H. Shawkey, M. Ali","doi":"10.1109/NILES.2019.8909305","DOIUrl":"https://doi.org/10.1109/NILES.2019.8909305","url":null,"abstract":"This paper presents the design of an RF front-end transmitter implemented in UMC 130nm CMOS technology and intended for LTE applications. The proposed transmitter is composed of LC voltage-controlled oscillator (VCO), up-conversion mixer, and power amplifier (PA). The LC VCO is based on differential structure with cross-coupled NMOS transistors which achieves low phase noise and low power consumption. Gilbert-mixer is considered in this work because of its high conversion gain, better linearity, and good isolation at the cost of a slight increase in noise Figure (NF) and power consumption. In addition, low-power consumption PA design is introduced in this paper. The implemented transmitter provides a saturated output power of 23.1dBm with a maximum power gain of 29.6 dB, a 21.5dBm output 1-dB compression point, and a power consumption of 172.5mw satisfying the requirements on LTE front end.","PeriodicalId":330822,"journal":{"name":"2019 Novel Intelligent and Leading Emerging Sciences Conference (NILES)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126554265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}