{"title":"2003 IEEE International SOI Conference. Proceedings (Cat. No.03CH37443)","authors":"","doi":"10.1109/SOI.2003.1242875","DOIUrl":"https://doi.org/10.1109/SOI.2003.1242875","url":null,"abstract":"The following topics were dealt: SOI nanotechnology for high performance system on-chip application; a new block refresh concept for SOI floating body memories; elimination of parasitic channels in fully depleted SOI CMOS; surface smoothing effect in patterned SOI fabrication with SIMOX; silicon single crystal on quartz-Fabrication; effect of nanoscale strained Si grown on SiGe-on-insulator on electron mobility; frequency degradation of SOI MOS device output conductance; charge pumping effects in partially depleted SOI MOSFETs; corner effect in multiple-gate SOI MOSFETs new process and pixel structure of an SOI CMOS imager; nonclassical CMOS device design; quantum mechanical effects on double-gate MOSFET.","PeriodicalId":329294,"journal":{"name":"2003 IEEE International Conference on SOI","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132572002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}