2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)最新文献_第3页

ZnO nanostructures growth by hydrothermal process for nitrate ion sensing application 水热法制备ZnO纳米结构用于硝酸离子传感

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642598

W. H. Khoo, Muhammad Luqman Mohd Napi, M. L. Peng Tan, Shaharin Fadzli Bin Abd Rahman, S. M. Sultan

引用次数: 0

Detection of Ochratoxin A using Cellulose Acetate Nanofibers Modified with Silver Nanoparticle 纳米银修饰醋酸纤维素纳米纤维检测赭曲霉毒素A

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642404

Adel Mohammed Al-Dhahebi, Subash Chandra Bose Gopinath, Mohamed Shuaib Mohamed Saheed, M. Mustapha

引用次数: 1

SENNANO 2021 Copyright Page SENNANO 2021版权页面

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642671

引用次数: 0

Structural and photoluminescence properties of Zinc oxide nanowires synthesized by smart thermal CVD method 智能热CVD法合成氧化锌纳米线的结构和光致发光性能

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642666

Muhammad Arif Khan, N. Nayan, M. K. Ahmad, Soon Chin Fhong, R. A. Mohamed Ali

{"title":"Structural and photoluminescence properties of Zinc oxide nanowires synthesized by smart thermal CVD method","authors":"Muhammad Arif Khan, N. Nayan, M. K. Ahmad, Soon Chin Fhong, R. A. Mohamed Ali","doi":"10.1109/sennano51750.2021.9642666","DOIUrl":"https://doi.org/10.1109/sennano51750.2021.9642666","url":null,"abstract":"1D ZnO nanowires (NWs) are attractive material properties and unique performance in electronics, optics and photonic devices. In this paper, a smart thermal chemical vapor deposition (CVD) technique has been used to synthesize high crystalline and large scale ZnO NWs on Si substrate without any catalyst. The structural, surface morphology and luminescence properties of the deposited nanothin films are characterized by X-ray diffraction (XRD) technique, field emission scanning electron microscope (FESEM), energy dispersive X-ray spectrometer (EDX) and photoluminescence (PL) spectroscopy measurements. It is shown that ZnO NW has a hexagonal cylindrical structure with orientation of (002). The FESEM results of ZnO nanowires have shown smooth surface morphologies having diameter ~ 60-80 nm and length ~ 5-8 µm. The room temperature PL measurement exhibited sharp exciton line at 3.26 eV and a weak defect related red band at 1.58 eV. Furthermore, the possible formation of large scale ZnO NWs is presented. The smart thermal CVD method provides an excellent approach to control ZnO NWs growth for optoelectronic devices applications.","PeriodicalId":325031,"journal":{"name":"2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128978640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Wide Temperature Range Bandgap Reference Circuit with MOS Transistor Curvature Compensation 具有MOS晶体管曲率补偿的宽温度范围带隙参考电路

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/SENNANO51750.2021.9642532

Anith Nuraini Abd Rashid, Sofiyah Sal Hamid, Nuha A. Rhaffor, Asrulnizam Abd Manaf

引用次数: 0

Portable Small Items Stair-Lift (Detachable) 手提小物件梯式升降机(可拆卸)

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642405

I. Nawi, Syed Faiq Irfan Sayed Azman

引用次数: 0

Internet of Things (IoT) Continuity Challenge: Green Energy Power Consumption 物联网(IoT)连续性挑战:绿色能源电力消耗

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642656

Kim-Mey Chew, S. Yiiong, Nancy Bundan, G. Loh, Syvester Chiang-Wei Tan

{"title":"Internet of Things (IoT) Continuity Challenge: Green Energy Power Consumption","authors":"Kim-Mey Chew, S. Yiiong, Nancy Bundan, G. Loh, Syvester Chiang-Wei Tan","doi":"10.1109/sennano51750.2021.9642656","DOIUrl":"https://doi.org/10.1109/sennano51750.2021.9642656","url":null,"abstract":"The Internet of Things (IoT) has been gaining the attention of various sectors since the promotion in 1990. Billions of physical devices across the globe are connected to the Internet, gathering and sharing all data. The top five challenges have been streamlined as \"5C\". This study was conducted to address the challenge of \"continuity\". This research proposed an energy consumption study on the developed solar battery-based IoT water pressure meter. The proposed device has been developed on the basis of the IoT architecture consisting of a perception layer, a network layer and an application layer. Two types of network connectivity have been used: Global System Mobile (GSM) communication and Wi-Fi communication. Two experimental test cases were performed to the study of power consumption. The data collected in the first test case serves as primitive data (indoor) and the second test case serve as comparative data (outdoor). The viability of the battery was examined and presented. The results demonstrated the prolonging of battery life with the improvement on software framework and the increase in the charging rate of solar panels.","PeriodicalId":325031,"journal":{"name":"2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124147421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Junctions and Micromachines 结和微机械

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642564

B. Bahreyni

引用次数: 0

Performance Analysis of a Double-Gate Junctionless Transistor with Varied Doping and Gate Underlap using Device Simulator 用器件模拟器分析不同掺杂和栅极搭接的双栅无结晶体管的性能

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642547

Nurul Nasirah Afiqah Nasir, N. Othman, S. Sabki, Alhan Farhanah Abd Rahim

{"title":"Performance Analysis of a Double-Gate Junctionless Transistor with Varied Doping and Gate Underlap using Device Simulator","authors":"Nurul Nasirah Afiqah Nasir, N. Othman, S. Sabki, Alhan Farhanah Abd Rahim","doi":"10.1109/sennano51750.2021.9642547","DOIUrl":"https://doi.org/10.1109/sennano51750.2021.9642547","url":null,"abstract":"In this work, the impact of doping concentrations and gate underlap towards the electrical performance of a double-gate junctionless transistor (DG-JLT) were investigated using three-dimensional device simulator. The results show that the parameter of doping concentrations (N<inf>d</inf>) has a greater impact towards the electrical performance of the transistor as compared to the gate underlap length (L<inf>un</inf>). This can be seen in the results of leakage current (I<inf>off</inf>) and Drain-Induced Barrier Lowering (DIBL), where variations in N<inf>d</inf> causes differences as high as 5 decades to be obtained for I<inf>off</inf> together with significant increase in DIBL. In overall, it was found that N<inf>d</inf>=1×10<sup>18</sup> cm<sup>-3</sup> provides the best results in terms of the lowest DIBL and I<inf>off</inf> and the highest I<inf>on</inf>/I<inf>off</inf> ratio. Meanwhile, longer L<inf>un</inf> is found to give better electrical characteristics. The results obtained in this work can be used to further determine the most significant factors among the structural and material parameters that influence the electrical characteristics of a JLT.","PeriodicalId":325031,"journal":{"name":"2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123838831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Refractive Index, Temperature, and Heat Source Origin Sensing with Dual U-shaped Fiber Probes 折射率，温度和热源源传感与双u形光纤探头

2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) Pub Date : 2021-09-22 DOI: 10.1109/sennano51750.2021.9642665

Alfred Jia Yee Tan, Kek Seng Ung, S. Ng, P. Stoddart, H. Chua

{"title":"Refractive Index, Temperature, and Heat Source Origin Sensing with Dual U-shaped Fiber Probes","authors":"Alfred Jia Yee Tan, Kek Seng Ung, S. Ng, P. Stoddart, H. Chua","doi":"10.1109/sennano51750.2021.9642665","DOIUrl":"https://doi.org/10.1109/sennano51750.2021.9642665","url":null,"abstract":"Multiparameter sensors have become more valuable in the context of real-time monitoring system, where various measurand attributes affect the sensor response. Such feature is useful to accurately pinpoint the information of the measurand of interest in the presence of extraneous parameters. Most fiber optic sensors with multiparameter sensing capability are developed based on the interferometric scheme, where a bulky and costly detector is required. Single U-shaped fiber optic sensors, thus far, are limited to detecting only two parameters at most, with no spatial information provided. In this paper, we propose to assemble two U-shaped fiber probes to simultaneously detect refractive index, temperature, and heat source origin. The recorded sensor sensitivities for refractive index are -141.75%/RIU and -280.71%/RIU, and for temperature, 0.0535%/°C and 0.0931%/°C. Moreover, the sensor is able to estimate the heat source origin from two directions – front and back of the prototype. While the dual U-shaped fibers are able to measure refractive index and temperature simultaneously, they also provide spatial information regarding the positions of the heat emitting source, thereby enabling the multiparameter sensing capability. However, this paper reports only on the initial investigation of the prospect of multiple U-shaped fiber probes to achieve the multiparameter sensing capability.","PeriodicalId":325031,"journal":{"name":"2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125475608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1