发布求助
文献互助 智能选刊 最新文献

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics最新文献

筛选
英文 中文
Bismuth Aluminate BiAlO3: A New Lead-free High-TC Piezo-/ferroelectric 铝酸铋BiAlO3:一种新型无铅高tc压电/铁电材料
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393363
J. Zylberberg, A. Belik, E. Takayama-Muromachi, Z. Ye
{"title":"Bismuth Aluminate BiAlO3: A New Lead-free High-TC Piezo-/ferroelectric","authors":"J. Zylberberg, A. Belik, E. Takayama-Muromachi, Z. Ye","doi":"10.1109/ISAF.2007.4393363","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393363","url":null,"abstract":"Ferroelectric materials have applications in non-volatile random access memory devices and micro electromechanical systems. For such applications, the materials must remain ferroelectric up to high temperatures. The best materials that currently exist for these applications are lead-containing compounds like Pb(Zr<sub>1-x</sub>Ti<sub>x</sub>)O<sub>3</sub>. Owing to the toxicity of lead, there is a demand for lead-free high-temperature ferroelectrics. Bismuth aluminate has been predicted to be one such material [1]. In this work, BiA1O<sub>3</sub> is synthesized using a high-pressure high-temperature technique at 6 GPa and 1000degC. The diffraction experiments show that BiAlO<sub>3</sub> crystallizes in a rhombohedral unit cell that is elongated along the c-axis (R3c; Z = 6; a = 5.37546(5) A and c = 13.3933(1) A). The characterization of the dielectric, ferroelectric, and piezoelectric properties of the ceramic BiAlO<sub>3</sub> demonstrate that it is indeed a lead-free ferroelectric with a Curie temperature Tc > 520degC, a piezoelectric coefficient d33 = 28 pC/N and a room-temperature remnant polarization P<sub>r</sub> = 9.5 muC/cm<sup>2</sup>. P<sub>r</sub> increases with temperature, reaching 26.7 muC/cm<sup>2</sup> at 225degC. The dielectric, ferroelectric and piezoelectric properties of BiAlO<sub>3</sub> are comparable to those of BiFeO<sub>3</sub> (BFO) and SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT), making it a promising new high-Tc lead-free piezo-and ferroelectric for memory and transducer applications.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129086651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effects of Barium Substitution on the Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Made by MOCVD Using Ultrasonic Nebulization 钡取代对超声雾化MOCVD法制备Pb(Mg1/3Nb2/3)O3薄膜性能的影响
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393178
Kwang-Pyo Kim, Choon-ho Lee
{"title":"Effects of Barium Substitution on the Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Made by MOCVD Using Ultrasonic Nebulization","authors":"Kwang-Pyo Kim, Choon-ho Lee","doi":"10.1109/ISAF.2007.4393178","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393178","url":null,"abstract":"Lead magnesium niobate Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> (abbreviated PMN) films is well known as a relaxor-based ferroelectric materials, which have attracted considerable attention for their applications including ferroelectric nonvolatile memory, capacitors, piezoelectric and pyroelectric devices due to polarization switching, high dielectric constant, excellent piezoelectric and pyroelectric properties. However, the use of this material is not realized, because it is difficult to prepare the perovskite single phase PMN films without pyrochlore phase. The presence of the pyrochlore phase in the films, even in small quantities, decreases the dielectric constant and ferroelectric or piezoelectric performance of the films. It is well known that Ba substitution to Pb site of PMN promotes the perovskite phase stabilization. So we have deposited [Ba<sub>x</sub>Pb(<sub>1-x</sub>)(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>] films by MOCVD using ultrasonic nebulization and effects of Ba substitution quantity on the structural and electrical Properties of the films were investigated and we could obtained [Ba<sub>x</sub>Pb(<sub>1-x</sub>)(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>] films with only perovskite structure and they have excellent crystallographic and ferroelectric properties.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132625003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiferroic Properties of La, Ba Co-Modified BiFeO3-PbTiO3 Crystalline Solutions La, Ba共改性BiFeO3-PbTiO3晶体溶液的多铁性
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393274
Jinrong Cheng, Jianguo Chen, D. Jin, Shengwen Yu, Z. Meng
{"title":"Multiferroic Properties of La, Ba Co-Modified BiFeO3-PbTiO3 Crystalline Solutions","authors":"Jinrong Cheng, Jianguo Chen, D. Jin, Shengwen Yu, Z. Meng","doi":"10.1109/ISAF.2007.4393274","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393274","url":null,"abstract":"Solid solutions of La and Ba modified (1-x)BiFeO<sub>3</sub>-xPbTiO<sub>3</sub> were prepared by the mixed oxides method. The 10 at% of La<sup>3+</sup> and Ba<sup>2+</sup> substituents were utilized to substitute Bi<sup>3+</sup> and Pb<sup>2+</sup> ions respectively. These cations enter into the crystalline lattice to modify the structure and properties of BiFeO<sub>3</sub>-PbTiO<sub>3</sub>. The morphotropic phase boundary of (1-x)(Bi,La)FeO<sub>3</sub>-x(Pb,Ba)TiO<sub>3</sub> (BLF-PBT) appears at x=0.4 accompanying by the rhombohedral-tetragonal phase transition. It is found that (1-x)BLF-xPBT reveals enhanced ferroelectric and magnetic properties in the vicinity of the MPB. The remnant polarization and magnetization achieve of 26 muC/cm and 0.06 emu/g, respectively. Our results indicated that (1-x)Bi(Fe,Ga)O<sub>3</sub>-xPbTiO<sub>3</sub> is of the insulating and switchable multiferroics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116910214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and Dielectric properties of BiFeO3-PbTiO3 films prepared by sol-gel method 溶胶-凝胶法制备BiFeO3-PbTiO3薄膜及其介电性能
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393293
Jinyu Cai, Shengwen Yu, Jinrong Cheng, Ya Lu, Z. Meng
{"title":"Synthesis and Dielectric properties of BiFeO3-PbTiO3 films prepared by sol-gel method","authors":"Jinyu Cai, Shengwen Yu, Jinrong Cheng, Ya Lu, Z. Meng","doi":"10.1109/ISAF.2007.4393293","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393293","url":null,"abstract":"BiFeO3 -PbTiO3 (BFO-PT) films were synthesized by sol-gel method with the annealing temperatures to be 550degC, 600degC, and 650degC, respectively. The structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The dielectric constant and loss factor are measured. The leakage current density is also performed to check the conductivity of the films. The effect of annealing temperature of the BFO-PT films on the dielectric properties is obvious with the film annealed at 600degC presenting better dielectric behavior.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133215421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of Bi4Ti3O12 Thin Films Using Alcohol Related Solutions by Micro Liquid Delivery Systems 微液体输送系统中酒精相关溶液制备Bi4Ti3O12薄膜
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393190
M. Yamaguchi, A. Yamamoto, Y. Masuda
{"title":"Fabrication of Bi4Ti3O12 Thin Films Using Alcohol Related Solutions by Micro Liquid Delivery Systems","authors":"M. Yamaguchi, A. Yamamoto, Y. Masuda","doi":"10.1109/ISAF.2007.4393190","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393190","url":null,"abstract":"We fabricate the bismut titanate (Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>) thin films used an alcohol related solutions which dissolved Bi(OtC<sub>5</sub>H<sub>11</sub>)<sub>3</sub> and Ti[OCH(CH<sub>3</sub>)<sub>2</sub>]<sub>4</sub> in C<sub>2</sub>H<sub>5</sub>OC<sub>2</sub>H<sub>4</sub>OH for micro liquid delivery systems such as ink-jet printing method. These films fired at 750 degree Celsius into pure oxygen including 1.2% ozone atmosphere, exhibits plate-like grains, and highly c-axis oriented. Furthermore, its films shows good ferroelectric properties, remanent polarization and coercive field was 2.6 muC/cm<sup>2</sup> and 36 kV/cm, respectively, and shows fatigue properties up to 108 times. Additionally, we examined the pattern formation on Pt substrate with hydrophilic treatment by micro liquid delivery systems. Drawn patterns on hydrophilic treated substrate surface shows relatively flat cross sectional structures. Therefore, we think that the micro liquid delivery system and hydrophile treatment of substrate surface is effectively to the thin film formation.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133392541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and Electrical Properties of Ferroelectric-Gate Field-Effect-Transistors Using Au/(Bi,La)4Ti3O12/SrTa2O6/Si Structures Au/(Bi,La)4Ti3O12/SrTa2O6/Si结构的铁电栅场效应晶体管的结构和电学性能
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393169
Ho-Seung Jeon, Jeong-Hwan Kim, Joonam Kim, Kwang-Hun Park, Byung-Eun Park
{"title":"Structural and Electrical Properties of Ferroelectric-Gate Field-Effect-Transistors Using Au/(Bi,La)4Ti3O12/SrTa2O6/Si Structures","authors":"Ho-Seung Jeon, Jeong-Hwan Kim, Joonam Kim, Kwang-Hun Park, Byung-Eun Park","doi":"10.1109/ISAF.2007.4393169","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393169","url":null,"abstract":"We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)4Ti3O12 (BLT) and SrTa2O6 (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the plusmn5 V bias sweep. The leakage current density was as low as 1x10-7 A/cm2 at 5 V. From drain current-gate voltage characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) of the device was about 0.5 V due to the ferroelectric nature of BLT film. The drain current-drain voltage characteristics of the fabricated FeFETs showed typical n-channel FETs characteristics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133421618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Domain Structure in Ferroelectric PbTiO3 Nano-islands 铁电PbTiO3纳米岛的畴结构
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393256
Hee Han, Y. Park, Kilho Lee, S. Baik
{"title":"Domain Structure in Ferroelectric PbTiO3 Nano-islands","authors":"Hee Han, Y. Park, Kilho Lee, S. Baik","doi":"10.1109/ISAF.2007.4393256","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393256","url":null,"abstract":"Evolution of complex ferroelastic domain structures of PbTiO3 nano-islands grown epitaxially on Pt(001)/MgO(001) single crystal substrate by chemical solution deposition has been investigated by two-dimensional reciprocal space mapping technique using synchrotron X-ray diffraction. With decreasing lateral size and thickness of the nano-islands, the proportion of c-domains increased continuously and fully c-domain dominant structure was emerged. At the same time, some of a-domains in the twinned a/c/a/c type structure turned into the a-domains with defective domain boundaries aligned normal to the substrate plane. The relative proportions of two types of a-domains were also dependent on the lateral size of nano-islands. The smaller islands favored the aligned a-domains with defective domain boundaries, which seem to be due to extensive relaxation of confining strain imposed by the substrate.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133454984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lead-free Piezoelectric Thin Films for Bio-medical Applications 生物医学应用无铅压电薄膜
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393428
Seung-Hyun Kim, C. Koo, J. Cheon, Junghoon Yeom, H. Woo, J. Ha
{"title":"Lead-free Piezoelectric Thin Films for Bio-medical Applications","authors":"Seung-Hyun Kim, C. Koo, J. Cheon, Junghoon Yeom, H. Woo, J. Ha","doi":"10.1109/ISAF.2007.4393428","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393428","url":null,"abstract":"A systematic investigation of dielectric and piezoelectric properties of lead-free NKN films prepared by chemical solution deposition method is performed for Na/K = 50/50 composition. Among various lead-free materials, it is clarified that NKN films can be strong candidates for replacing PZT based piezoelectric thin films due to their reasonably good piezoelectric properties even if overall properties are somewhat worse than those of PZT based piezoelectrics. These results indicate that NKN films might be a promising lead-free piezoelectric system for a wide range of bio-compatible MEMS applications.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127881637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Optical Properties of Epitaxial PLZT Thin Films 外延PLZT薄膜光学特性分析
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393420
M. Echizen, T. Kosaka, D. Fukunaga, T. Nishida, K. Uchiyama, T. Shiosaki
{"title":"Analysis of Optical Properties of Epitaxial PLZT Thin Films","authors":"M. Echizen, T. Kosaka, D. Fukunaga, T. Nishida, K. Uchiyama, T. Shiosaki","doi":"10.1109/ISAF.2007.4393420","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393420","url":null,"abstract":"La-doped lead zirconate titanate (PLZT) has been applied to electro-optic (E-O) devices. We grew epitaxial PLZT thin films on alpha-Al2O3(012) single crystalline substrates fabricated by the conventional and the new sol-gel process. From result of observation by spectrophotometer, refractive index n approximately equal, were unaffected by processes. However, the average oscillator strength was different.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121195714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of Proton Diffusion Analysis in Perovskite-Type Oxides 质子扩散分析在钙钛矿型氧化物中的应用
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393248
E. Matsushita, H. Senki
{"title":"Application of Proton Diffusion Analysis in Perovskite-Type Oxides","authors":"E. Matsushita, H. Senki","doi":"10.1109/ISAF.2007.4393248","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393248","url":null,"abstract":"In perovskite-type oxides, a model of proton conduction is proposed to apply to efficient fuel cells. Basing on the quantum mechanical calculation, H+ diffusivity on and between temporally made O-H-O bond and the optimum path are predicted in acceptor-doped SrTiO3, SrZrO3 and CaZrO3. At low temperatures, numerical results suggest the possibility of proton tunnneling process different from the proton jumping process at high temperatures. Furthermore, it is discussed that by changing the network of O-octahedron from corner-linked to edge-sharing type, the proton conduction becomes impossible, whereas no-quantum Li+ diffusion possible.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128424644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信