Analysis of Optical Properties of Epitaxial PLZT Thin Films

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393420

M. Echizen, T. Kosaka, D. Fukunaga, T. Nishida, K. Uchiyama, T. Shiosaki

引用次数: 0

Abstract

La-doped lead zirconate titanate (PLZT) has been applied to electro-optic (E-O) devices. We grew epitaxial PLZT thin films on alpha-Al2O3(012) single crystalline substrates fabricated by the conventional and the new sol-gel process. From result of observation by spectrophotometer, refractive index n approximately equal, were unaffected by processes. However, the average oscillator strength was different.

查看原文本刊更多论文

外延PLZT薄膜光学特性分析

镧掺杂锆钛酸铅(PLZT)已被应用于电光器件中。我们在α - al2o3(012)单晶衬底上生长了外延PLZT薄膜。从分光光度计的观察结果来看，折射率n近似相等，不受工艺的影响。然而，振荡器的平均强度是不同的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

自引率

0.00%

发文量