Seventh International IEEE Conference on VLSI Multilevel Interconnection最新文献

Tungsten-titanium sputtering target processing effects on particle generation and thin film properties for VLSI applications 钨钛溅射靶加工对超大规模集成电路中粒子生成和薄膜性能的影响

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127887

E. Waterman, J. Dunlop, T. Brat

引用次数: 5

Modelling fusible CVD glass planarization flow contours 可熔CVD玻璃平面化流动轮廓的建模

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127903

L. White

引用次数: 0

Stress and TEM measurements as a function of temperature for aluminum alloys 铝合金的应力和透射电镜测量作为温度的函数

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127873

D. Gardner, H. Longworth, P. Flinn

{"title":"Stress and TEM measurements as a function of temperature for aluminum alloys","authors":"D. Gardner, H. Longworth, P. Flinn","doi":"10.1109/VMIC.1990.127873","DOIUrl":"https://doi.org/10.1109/VMIC.1990.127873","url":null,"abstract":"Measurements of the stress in situ as a function of temperature have proven to be an easy and powerful technique for obtaining information on the temperature and time for formation of both solid-state reactions and changes in morphology and structure. Correlating these changes using hot-stage transmission electron microscopy (TEM) and X-ray diffraction measurements has demonstrated that the stress changes correspond to chemical reactions and structural changes. The solid-state reactions of films consisting of aluminum with tantalum and vanadium were examined using stress measurements, TEM, X-ray diffraction, resistivity, and surface roughness measurements. The growth of very large gains (50-100 mu m) in Al/Cu/Cr films was also examined using both stress measurements and hot-stage TEM in situ during thermal cycling. Stress measurements revealed that aluminum reacts with vanadium first at 370 degrees C and then at 410 degrees C. Using X-ray diffraction and cross-sectional TEM analysis, the first reaction was found to correlate with the formation of VAl/sub 3/ and the second reaction with the formation VAl/sub 11/. The thickness of the vanadium aluminide layer changed significantly after the second reaction. Similar measurements of Al-Si/Ta revealed that an untextured jagged TaAl/sub 3/ layer forms at 430 degrees C.<<ETX>>","PeriodicalId":320318,"journal":{"name":"Seventh International IEEE Conference on VLSI Multilevel Interconnection","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128704229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Enhanced selective tungsten encapsulation of TiW capped aluminum interconnect TiW包覆铝互连的选择性钨封装增强

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127879

C.M. Dalton

引用次数: 0

Manufacturable triple level metal technology for submicron CMOS 可制造的亚微米CMOS三能级金属技术

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127914

W. Paulson, J. Klein, M. Woo, T. Kobayashi, R. Hendrix, E. Travis, F. Pintchovski, Y. See

引用次数: 0

Barrier metal effects on electromigration of layered aluminum metallization 阻挡金属对层状铝金属化电迁移的影响

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127856

H. Hoang, R. Coy, J. McPherson

引用次数: 8

A submicron, double level metal process for high density memory applications 一种用于高密度存储器应用的亚微米双级金属工艺

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127842

F. Whitwer, D. Milligan, J. Garner, S. Sun, M. Shenasa, T. Davies, C. Lage

引用次数: 3

Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists 等离子沉积平面非晶碳膜用于双层抗蚀剂的硬化过程

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127922

S. Pang, R. B. Goodman, M. Horn

引用次数: 0

Resistless patterning of aluminum 铝的不可抗拒的图案

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127876

T. Cacouris, R. Scarmozzino, R. Osgood

{"title":"Resistless patterning of aluminum","authors":"T. Cacouris, R. Scarmozzino, R. Osgood","doi":"10.1109/VMIC.1990.127876","DOIUrl":"https://doi.org/10.1109/VMIC.1990.127876","url":null,"abstract":"A technique for patterning and depositing aluminum using laser-assisted selective chemical vapor deposition (CVD) is presented. This is accomplished using a light-assisted process that activates an adsorbed metallorganic precursor for aluminum, dimethyl-aluminum hydride (DMAlH), onto the substrate surface, thus forming a seed layer for subsequent selective CVD. In the same processing chamber, once the patterning is delineated via this seed layer, the substrate temperature is raised to 110-180 degrees C, and selective CVD of aluminum takes place. A report is presented on the issues of selectivity, growth rates, morphology, electrical properties, and elemental composition of aluminum grown in this manner. Electrical resistivity, for example, can be as low as twice that of bulk aluminum. Furthermore, in order to make such a process compatible with multilevel metallization schemes, contact resistivity of such a film to preexisting aluminum metallization (with a native aluminum oxide) was measured and found to be approximately 0.2 mu Omega -cm/sup 2/ without any special pre- or post-treatment. Previous attempts at such a deposition and patterning scheme were less than successful at obtaining reliably low contact resistivities.<<ETX>>","PeriodicalId":320318,"journal":{"name":"Seventh International IEEE Conference on VLSI Multilevel Interconnection","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115847576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Mechanism of AC electromigration 交流电迁移机理

Seventh International IEEE Conference on VLSI Multilevel Interconnection Pub Date : 1990-06-12 DOI: 10.1109/VMIC.1990.127851

K. Shono, T. Kuroki, H. Sekiya, N. Yamada

引用次数: 6