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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics最新文献

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Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling 负电容场效应晶体管解决技术缩放的基本限制
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-8
H. Kaur
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引用次数: 0
Switching Performance Analysis of III-V FinFETs III-V型finfet开关性能分析
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-7
A. Basak, A. Deyasi, Kalyan Biswas, A. Sarkar
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引用次数: 0
Characterization of Silicon FinFETs under Nanoscale Dimensions 纳米尺度下硅finfet的表征
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-5
R. Baek, Jun-Sik Yoon
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引用次数: 0
Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications 用于提高低功耗应用性能的锗或SiGe finfet
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-6
N. Jaiswal, V. N. Ramakrishnan
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引用次数: 0
Fundamentals of 2-D Materials 二维材料基础
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-10
G. Anushya, R. Ramachandran, R. Sarika, Michael Benjamin
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引用次数: 0
High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications 未来低功耗应用的高性能隧道场效应晶体管(tfet)
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-2
R. Mathew, A. Beohar, A. Upadhyay
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引用次数: 0
Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors 碳纳米管和石墨烯隧道场效应晶体管的性能分析
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-4
K. Ramkumar, Singh Rohitkumar Shailendra, V. N. Ramakrishnan
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引用次数: 0
Ultra Low Power III-V Tunnel Field-Effect Transistors 超低功耗III-V隧道场效应晶体管
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-3
J. Ajayan, D. Nirmal
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引用次数: 0
An Introduction to Nanoscale CMOS Technology Transistors 纳米CMOS技术晶体管简介
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-1
K. P. Pradhan
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引用次数: 1
Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications 用于低功耗场效应晶体管(FET)器件的二维过渡金属二硫化物(TMD)材料
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI: 10.1201/9781003200987-11
R. Sridevi, J. Pravin
{"title":"Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications","authors":"R. Sridevi, J. Pravin","doi":"10.1201/9781003200987-11","DOIUrl":"https://doi.org/10.1201/9781003200987-11","url":null,"abstract":"","PeriodicalId":319523,"journal":{"name":"Semiconductor Devices and Technologies for Future Ultra Low Power Electronics","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128608143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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