超低功耗III-V隧道场效应晶体管

{"title":"超低功耗III-V隧道场效应晶体管","authors":"J. Ajayan, D. Nirmal","doi":"10.1201/9781003200987-3","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":319523,"journal":{"name":"Semiconductor Devices and Technologies for Future Ultra Low Power Electronics","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra Low Power III-V Tunnel Field-Effect Transistors\",\"authors\":\"J. Ajayan, D. Nirmal\",\"doi\":\"10.1201/9781003200987-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":319523,\"journal\":{\"name\":\"Semiconductor Devices and Technologies for Future Ultra Low Power Electronics\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Devices and Technologies for Future Ultra Low Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1201/9781003200987-3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Devices and Technologies for Future Ultra Low Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/9781003200987-3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}