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Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Pub Date : 2021-11-02 DOI:10.1201/9781003200987-11
R. Sridevi, J. Pravin
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用于低功耗场效应晶体管(FET)器件的二维过渡金属二硫化物(TMD)材料
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics
Semiconductor Devices and Technologies for Future Ultra Low Power Electronics
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