{"title":"AC conductivity parameters of graphene films with THz spectroscopy","authors":"W.-D. Zhang, E. Brown, P. Pham, P. Burke","doi":"10.1109/NAECON.2014.7045824","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045824","url":null,"abstract":"The complex conductivity of CVD-grown graphene films between 0.1 and 1.6 THz are obtained using a non-destructive THz etalon transmittance technique. Critical parameters such as ionized-impurity scattering width and chemical potential are derived. The technique can be extended to extract the complex ac conductivity parameters of other thin conducting films or 2DEG materials with high sheet conductance.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124099663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vamshi Veesam, Ramana Thakkallapally, I. Abdel-Motaleb, Zheng Shen
{"title":"3D SiC/Si normally-off MOSFET for high power high speed applications","authors":"Vamshi Veesam, Ramana Thakkallapally, I. Abdel-Motaleb, Zheng Shen","doi":"10.1109/NAECON.2014.7045767","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045767","url":null,"abstract":"An optimized power system requires the integration of more than one technology. In this paper we present a 3D 3C-SiC/Si MOSFET, where high performance power devices can be integrated with low cost Si technology. Using the numerical analysis simulator Silvaco Atlas to simulate the device performance, it was found that these devices can provide double the current while occupying less than 33% of the substrate area of a lateral device with the same gate length and width. The device simulation shows that the breakdown voltage can reach 265V and the drain current can reach 0.5 A/mm at Vg =4 V. The stability of this device with temperature makes it an excellent candidate for high power applications.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124812776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Numerical modeling of plasma oscillations in 2D electron gas for THz HEMT devices","authors":"S. Bhardwaj, N. Nahar, J. Volakis","doi":"10.1109/NAECON.2014.7045820","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045820","url":null,"abstract":"There has been growing interest in all-electronic sources in the terahertz frequencies. A compact THz source is obtainable, if plasma-oscillations in the 2DEG of a high electron mobility transistor (HEMT) are utilized. With this goal in mind, we develop a numerical tool which models such oscillations. We use hydrodynamic equations to model drifting plasma in the 2DEG, whereas the surrounding environment is modeled using the Maxwell's equations. The developed model is then validated by using previously published analytical results.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129267809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Extraction of parasitics in GaN HEMTs via Full-Wave Electromagnetic Modeling","authors":"Y. Karisan, K. Sertel","doi":"10.1109/NAECON.2014.7045822","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045822","url":null,"abstract":"We present a new equivalent circuit model for millimeter-wave and sub-millimeter wave GaN high electron mobility transistors (HEMTs) that can capture the geometry-and material-dependent parasitic effects within the device. The impact of electromagnetic interactions on overall device performance is analyzed extensively via full-wave EM simulations using high-fidelity device geometries. An empirical lumped-element equivalent circuit model is developed to capture the electromagnetic behavior not only within the internal structure of the device but also the surrounding impedance environment. Based on this parasitic-aware equivalent circuit, a multiple-step parameter extraction algorithm is employed to determine the equivalent lumped elements. Numerical results, using a conventional sub-mmW HEMT topology are presented to illustrate the performance of the proposed circuit models in capturing device physics in the THz band.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"514 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133634677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Freeman, L. Cain, Holly Zelnio, Edward Watson, O. Mendoza-Schrock
{"title":"Minor Area Motion Imagery (MAMI) Dismount Tower Data challenge problems","authors":"A. Freeman, L. Cain, Holly Zelnio, Edward Watson, O. Mendoza-Schrock","doi":"10.1109/NAECON.2014.7045806","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045806","url":null,"abstract":"The ability to classify a dismount and its activity, is of interest for both military and non-military applications. This effort describes a database that is rich for dismount activity classification and is available to the public - the Minor Area Motion Imagery Dismount Tower Data (MAMI-DTD) Collection. The MAMI-DTD collection was gathered in the Summer of 2013 and contains several examples of dismount activity such as running, walking, walking with a load, etc. It is unique because it contains a variety of operating conditions including angular diversity. Furthermore, it contains multi-modal data - infared (IR), passive visible, etc. This paper provides a detailed description of the data collection and details some interesting challenges such as gender, activity, and hierarchical classification.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115463418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Skin detection with multispectral imagers onboard small unmanned aerial systems","authors":"S. R. Sweetnich, David R. Jacques","doi":"10.1109/NAECON.2014.7045803","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045803","url":null,"abstract":"Dismount skin detection from an aerial platform has posed challenges for skin detection compared to ground-based platforms. A small, multispectral imager was constructed and tested on a SUAS. Computer vision registration, stereo camera calibration, and geolocation from autopilot telemetry were utilized to design a dismount detection platform. Close range comparison with a line scan HSI resulted in an average 5.112% difference in ROC AUC. This research indicated that SUAS-based Spectral Imagers are capable tools in dismount detection protocols.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123959100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A graphical method for identifying positive feedback loops automatically in self-biasing circuit for determining the uniqueness of operating points","authors":"Shiya Liu, R. Geiger, Degang Chen","doi":"10.1109/NAECON.2014.7045841","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045841","url":null,"abstract":"A graphical method for identifying positive feedback loops in analog circuits is presented for the purpose of identifying the stable equilibrium points. Graphical models for key analog components are developed and hierarchically used to obtain a graphical representation of an analog circuit. From this graphical circuit representation, positive feedback loops are defined. Applications to identifying Trojan operating states and trust in electronic circuits are discussed.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125111746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Tsang, K. Ding, P. Duvelle, J. Vella, J. Goldsmith, C. Devlin, N. Limberopoulos
{"title":"Optical imaging over a plasmonic thin film with deep-subwavelength surface roughness","authors":"L. Tsang, K. Ding, P. Duvelle, J. Vella, J. Goldsmith, C. Devlin, N. Limberopoulos","doi":"10.1109/NAECON.2014.7045772","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045772","url":null,"abstract":"Subwavelength imaging has been reported for a layer of plasmonic thin film. In this paper, we investigate the enhancement of the sub-diffraction-limit imaging using subwavelength surface roughness. Full wave simulations are carried out based on Lippmann Schwinger equation with linearized scattering potentials. Progresses in experiment are also reported.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133774602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Goldsmith, V. Vasilyev, J. Vella, N. Limberopoulos, L. Starman
{"title":"Black Aluminum: a novel anti-reflective absorbing coating","authors":"J. Goldsmith, V. Vasilyev, J. Vella, N. Limberopoulos, L. Starman","doi":"10.1109/NAECON.2014.7045780","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045780","url":null,"abstract":"Black absorbing and antireflective coatings have many optical sensing applications. A process to deposit Black Aluminum, a novel anti-reflective coating has been discovered. Black Aluminum films with controlled thickness were deposited on silicon and their reflection spectra were investigated. In addition, to test the effectiveness of this new material at the device level, pyroelectric devices were fabricated with Black Aluminum acting as the absorbing layer. Significant enhancement in the pyroelectric response is reported for devices coated with Black Aluminum as compared to devices without the Black Aluminum absorbing layer.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130528789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xingsheng Xu, Hariharan Ananthanarayanan, R. Ordóñez
{"title":"Design and construction of 9-DOF hyper-redundant robotic arm","authors":"Xingsheng Xu, Hariharan Ananthanarayanan, R. Ordóñez","doi":"10.1109/NAECON.2014.7045828","DOIUrl":"https://doi.org/10.1109/NAECON.2014.7045828","url":null,"abstract":"In this paper, an application robotic platform has been constructed based on the kinematic model of a 9-DOF hyper-redundant manipulator. The efficacy of our kinematic algorithm affects the accuracy and stability of both motion control and path tracking. The result of tracking different paths and error analysis shows that the 9-DOF manipulator works functionally and satisfies all the requirement of experimental design.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134162274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}