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2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)最新文献

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Application of Multi-element Photo Detector in Optical Disdrometers 多元件光电探测器在光学衍射仪中的应用
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906838
D. Kiesewetter, Sergey Makarov, V. Malyugin
{"title":"Application of Multi-element Photo Detector in Optical Disdrometers","authors":"D. Kiesewetter, Sergey Makarov, V. Malyugin","doi":"10.1109/EExPolytech.2019.8906838","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906838","url":null,"abstract":"The design of multi-element silicon photodetector for optical disdrometer, which allows reducing the measurement error of intensity, size and speed of meteorological precipitation has been developed. The parameters of the pulses of the photocurrent arising at the intersection of the shadows of the moving particles of the photosensitive elements of the photodetector are analyzed. Additional (in comparison with the standard design) photosensitive elements of the rectangular receiver, located perpendicular to the standard operating elements of the photodetector, allows us to take into account the influence of edge effects when performing digital signal processing. It is shown that the boundary effects arising at the intersection of the shadow of the particle of the photosensitive element edge can lead to an error in the measurement of the size and intensity of meteorological precipitation up to 30% at the raindrops diameters of 2... 5 mm. Developed software, taking into account the constructive and functional characteristics of the sensor when processing the signals, allows us to reduce the error probability by 1-2 orders of magnitude to a value of 1.5...2%. The algorithm of signal processing is described. The results of the tests of the developed photodetector as a part of an optical disdrometer are presented.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133730994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Injection Currents in Si–С60–InGa Eutectic Sandwich Structures Si中的注入电流-С60-InGa共晶夹层结构
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906830
D. I. Dolzhenko, I. Zakharova, N. Sudar
{"title":"Injection Currents in Si–С60–InGa Eutectic Sandwich Structures","authors":"D. I. Dolzhenko, I. Zakharova, N. Sudar","doi":"10.1109/EExPolytech.2019.8906830","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906830","url":null,"abstract":"The electrical conductivity of 300 nm thick polycrystalline С<inf>60</inf> films on an n-type Si substrate was measured in the range of the electric field strength of 3•10<sup>4</sup>-3•10<sup>7</sup> V/m at 288-333 K. It has been established that the SCLC regime is implemented in fields above 3•10<sup>6</sup> V/m. The total concentration of trap states has been estimated at 3•10<sup>21</sup> m<sup>-3</sup> at a trap depth of 0.35 eV.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116744120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Localization of Ionizing Radiation Using Nanoporous Alumina Matrices 利用纳米多孔氧化铝基质定位电离辐射
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906853
E. Muratova, A. Shemukhin
{"title":"Localization of Ionizing Radiation Using Nanoporous Alumina Matrices","authors":"E. Muratova, A. Shemukhin","doi":"10.1109/EExPolytech.2019.8906853","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906853","url":null,"abstract":"The paper deals with ion beam transportation to the object of investigation. The passing and scattering of accelerated helium ions under irradiation of dielectric channels based on porous alumina were studied. The MSU accelerator complex HVEE AN-2500 was used as a source of the He+ beam with an energy of 1.7 MeV. Scattering of ions was studied by means of RBS technique. Helium transition through nanoporous alumina was observed at various angles between the normal to the sample and the beam propagation direction. It is shown that porous anodic aluminum oxides have the structure of an ideal dielectric matrix of nanocapillaries. Due to the small angular scattering it allows transportation of the accelerated charged particle beams through the dielectric capillaries, and, as a result, the localization of high energy ionic effects.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132229197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Trouble-free Operation of Ionic Dielectrics During Prolonged Exposure to Voltage 离子电介质在长时间暴露于电压下的无故障操作
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906886
N. Pshchelko, E. Vodkailo, O. Tsareva
{"title":"Trouble-free Operation of Ionic Dielectrics During Prolonged Exposure to Voltage","authors":"N. Pshchelko, E. Vodkailo, O. Tsareva","doi":"10.1109/EExPolytech.2019.8906886","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906886","url":null,"abstract":"It is shown that, if the ionic dielectrics stay in the electric field for a long time, a substantial redistribution of the electric field strength over the dielectric thickness occurs due to the migration of weakly bound ions under the influence of the electric field. Usually, the most mobile types of ions are positive (e.g., sodium ions in glass), therefore, over time, a high-resistance region is formed near the anode, on which almost all the voltage applied to the dielectric drops. This provides strong electric fields and can lead to the breakdown. Quantitative estimates of the time course of this process are obtained. It was revealed that temperature is of decisive importance for the process under consideration. The result obtained seems to be interesting: for a dielectric such as alkaline glass, the time of its safe operation at a relatively low temperature (about 130°C) does not exceed several years. Obviously, this result should be taken into account when designing devices based on ionic dielectrics exposured to voltage.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128590802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Multi-Criteria Optimization in the LTspice Simulation Software of a JFet class AB Buffer Amplifier for Operation at Low Temperatures JFet类AB型低温缓冲放大器LTspice仿真软件的多准则优化
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906871
N. N. Prokopenko, Maxim V. Liashov, A. Bugakova, A. Zhuk
{"title":"The Multi-Criteria Optimization in the LTspice Simulation Software of a JFet class AB Buffer Amplifier for Operation at Low Temperatures","authors":"N. N. Prokopenko, Maxim V. Liashov, A. Bugakova, A. Zhuk","doi":"10.1109/EExPolytech.2019.8906871","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906871","url":null,"abstract":"A high-speed buffer amplifier (BA) for analog microcircuits on complementary junction field-effect transistors is proposed. The scheme differs from the known circuit solutions by a small number of elements and can operate within the range of cryogenic temperatures. In the LTSpice simulation software, the optimal control parameters were selected using the DEAP (Distributed Evolutionary Algorithm in Python) library of distributed evolutionary calculations and the NSGA-II multi-criteria optimization algorithm. Minimization of offset voltage, static current consumption and dead band width on the amplitude characteristic at low temperatures were chosen as the priority parameters of the control unit.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128647187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compensation of Fiber Quarter-Wave Plate Temperature Deviation in Fiber Optic Current Sensor 光纤电流传感器中光纤四分之一波片温度偏差的补偿
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906876
V. Temkina, A. Medvedev, Alexey Mayzel, A. Mokeev
{"title":"Compensation of Fiber Quarter-Wave Plate Temperature Deviation in Fiber Optic Current Sensor","authors":"V. Temkina, A. Medvedev, Alexey Mayzel, A. Mokeev","doi":"10.1109/EExPolytech.2019.8906876","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906876","url":null,"abstract":"The paper describes the problem of fiber quarter-wave plate temperature dependency, its influence on the fiber optic current sensors (FOCS) output error, the method of this error compensation, and the results of this method implementation.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134448217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Means to Enhance the Bandwidth Gain from Applying Multicomponent Signals in DVB-S2 在DVB-S2中应用多分量信号提高带宽增益的方法
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906865
P. H., A. Gelgor
{"title":"Means to Enhance the Bandwidth Gain from Applying Multicomponent Signals in DVB-S2","authors":"P. H., A. Gelgor","doi":"10.1109/EExPolytech.2019.8906865","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906865","url":null,"abstract":"This paper considers the improvement of DVB-S2 system by using bandwidth-efficient multicomponent signals (MCS) with optimal shaping pulses. Finite optimal pulses are obtained by solving the optimization problem of minimizing partial correlation of pulses taking into account spectral mask. Optimal pulses with different ISI levels are considered to choose the best pulses for various signal-to-noise conditions. It is showed that the pulse with high ISI level performs better as signal-to-noise ratio increases. Moreover, increasing the number of iterations in LDPC decoding leads to more bandwidth efficiency gain for the system with optimal pulses. A practical realization based on USRP device of the DVB-S2 system with optimal pulses is supposed to confirm system performance in radio frequency channel.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124934891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
EExPolytech 2019 Preface
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/eexpolytech.2019.8906844
{"title":"EExPolytech 2019 Preface","authors":"","doi":"10.1109/eexpolytech.2019.8906844","DOIUrl":"https://doi.org/10.1109/eexpolytech.2019.8906844","url":null,"abstract":"","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129511525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature Evolution of Atomic Dynamics in Chemically Ordered Lead Scandium Niobate Studied by Inelastic Neutron Scattering 非弹性中子散射研究化学有序铌酸铅钪原子动力学的温度演化
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906808
D. Andronikova, P. Janolin, A. Filimonov, A. Ivanov, S. Vakhrushev
{"title":"Temperature Evolution of Atomic Dynamics in Chemically Ordered Lead Scandium Niobate Studied by Inelastic Neutron Scattering","authors":"D. Andronikova, P. Janolin, A. Filimonov, A. Ivanov, S. Vakhrushev","doi":"10.1109/EExPolytech.2019.8906808","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906808","url":null,"abstract":"Preliminary results of inelastic neutron scattering in chemically ordered Pb(Sc1/2Nb1/2)O3 (PSN) are reported. It is shown that neutron spectra, obtained around 220 node in $left[ {1bar 10} right]$ direction, are characterised by intense central peak and broad phonon resonances at all studied temperatures. It has been found that TO in-plane polarised phonons do not demonstrate any softening. On the contrary, clear growth of TO phonon energy was detected for all temperatures. Intensity of the central peak continuously grows on cooling. Observed critical dynamics scenario completely differs from the expected one for relaxor or ferroelectric material. We believe our observations could bring new insights in the understanding of the microscopic origin of the relaxor phenomena.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"206 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121236412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
EExPolytech 2019 Section 4
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/eexpolytech.2019.8906817
{"title":"EExPolytech 2019 Section 4","authors":"","doi":"10.1109/eexpolytech.2019.8906817","DOIUrl":"https://doi.org/10.1109/eexpolytech.2019.8906817","url":null,"abstract":"","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121542323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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