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2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)最新文献

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Composite Porous Silicon Materials for Emission Electrode Synthesis 用于发射电极合成的复合多孔硅材料
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906841
R. Smerdov
{"title":"Composite Porous Silicon Materials for Emission Electrode Synthesis","authors":"R. Smerdov","doi":"10.1109/EExPolytech.2019.8906841","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906841","url":null,"abstract":"The theoretical background of the electron field emission process is provided, both contemporary and perspective emission models are considered. Porous silicon (PS) based nanostructured material functionalized with fullerenol is suggested for further electrode realization for both field and photon enhanced thermionic emission processes due to its unique properties. The synthesis technique of composite PS-C60OH/Ag+Cu prototype structure required for further emitter electrode realization is developed.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116899895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FPGA Design and Implementation of DVB-S2/S2X LDPC Encoder DVB-S2/S2X LDPC编码器的FPGA设计与实现
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906811
A. V. Lazarenko
{"title":"FPGA Design and Implementation of DVB-S2/S2X LDPC Encoder","authors":"A. V. Lazarenko","doi":"10.1109/EExPolytech.2019.8906811","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906811","url":null,"abstract":"A new FPGA architecture of the DVB-S2/S2X LDPC FEC encoder with low number of resources consumption is proposed. The encoder is full rate compatible and supports all code rates from DVB-S2/S2X standards. In addition, all frame types (normal, medium and short) are supported. The proposed architecture is based on iterative addresses calculation of parity bits accumulators and actively reuses parity calculators and parity storage. The Kintex FPGA implementation of the proposed architecture is done resulting in less than 3000 look-up-tables and flip-flops and only 6 block memories usage.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115989207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Opportunities of Scanning Spreading Resistance Microscopy for Photosensitive Nanostructured Materials Characterization 扫描扩散电阻显微镜用于光敏纳米结构材料表征的机会
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906875
Y. Spivak
{"title":"Opportunities of Scanning Spreading Resistance Microscopy for Photosensitive Nanostructured Materials Characterization","authors":"Y. Spivak","doi":"10.1109/EExPolytech.2019.8906875","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906875","url":null,"abstract":"The possibilities and features of the application of scanning spreading resistance microscopy (SSRM) methods and original methods developed at SPbETU \"LETI\" (Department of Micro- and Nanoelectronics, UNL \"Nanomaterials\") for studying the electrical and physical properties and structure of photosensitive polycrystalline layers of lead chalcogenides, including the possibility of a qualitative analysis of the composition of oxide coatings of such layers are considered.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122752809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study of Dual-Directional SCR with Low Dynamic Resistance and High Holding Voltage for Low-Voltage Application 低压用低动态电阻、高保持电压双向可控硅的研究
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906820
Kyoung-Il Do, Je-Wook Woo, Yong-Seo Koo, Kwang-Yeob Lee
{"title":"A Study of Dual-Directional SCR with Low Dynamic Resistance and High Holding Voltage for Low-Voltage Application","authors":"Kyoung-Il Do, Je-Wook Woo, Yong-Seo Koo, Kwang-Yeob Lee","doi":"10.1109/EExPolytech.2019.8906820","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906820","url":null,"abstract":"A silicon controlled rectifier (SCR)-based dual- directional electrostatic discharge (ESD) protection device with low on-resistance high holding voltage and low on-resistance for low-voltage applications is proposed. It can also be applied to high-speed-interface applications, such as the Internet of things, wearable devices, and mobile processors. The proposed dual- directional ESD protection device has a great current-driving capacity because of its underneath on-resistance and highly effective second breakdown current in comparison with the original SCR-based dual-directional ESD protection device. Therefore, the proposed dual-directional ESD protection device can provide a low impedance discharge path in the NS, ND, PS, and PD ESD stress modes.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122880297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Method and Device for Measuring Capacitance Type Electric Trancducers Parameters 电容式换能器参数的测量方法和装置
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906822
N. Pshchelko, E. Vodkailo, O. Tsareva
{"title":"Method and Device for Measuring Capacitance Type Electric Trancducers Parameters","authors":"N. Pshchelko, E. Vodkailo, O. Tsareva","doi":"10.1109/EExPolytech.2019.8906822","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906822","url":null,"abstract":"A non-destructive method for controlling the parameters of capsules of electrostatic transducers of a capacitor type with moving plates was developed. The method is based on the measurement of the capacitance-voltage characteristic of the capsule. Based on the results of this measurement, a whole complex of the most important parameters of the capsule is determined - the thickness of the air gap, the membrane tension, the surface potential of the electret, etc. As an example, the practical use of the method for determining the quality of electret microphones is demonstrated.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124765237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Distortion Analysis of Interferometric Signal with Auxiliary Emission Modulation in Semiconductor Laser 半导体激光器辅助发射调制干涉信号畸变分析
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906860
P. Skliarov, A. Kostromitin, K. Muravyov
{"title":"Distortion Analysis of Interferometric Signal with Auxiliary Emission Modulation in Semiconductor Laser","authors":"P. Skliarov, A. Kostromitin, K. Muravyov","doi":"10.1109/EExPolytech.2019.8906860","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906860","url":null,"abstract":"The results of distortion analysis of interferometric signal of a semiconductor laser with the current modulation are presented. The mathematical model of the interferometric signal was refined based on experimental data. Measurements were performed for harmonic and triangular auxiliary modulation, and the effect of laser thermal stabilization on the modulation of the interferometric signal was studied.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127008364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical Methods for Periodontitis Early Rapid Diagnosis 牙周炎早期快速诊断的光学方法
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906802
E. Timchenko, P. Timchenko, O. Frolov, E. Yagofarova, K. B. Chernyy-Tkach, M. Zybin, G. G. Dolgushov
{"title":"Optical Methods for Periodontitis Early Rapid Diagnosis","authors":"E. Timchenko, P. Timchenko, O. Frolov, E. Yagofarova, K. B. Chernyy-Tkach, M. Zybin, G. G. Dolgushov","doi":"10.1109/EExPolytech.2019.8906802","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906802","url":null,"abstract":"The results of experimental study of periodontitis early diagnosis using optical methods (Raman spectroscopy and confocal microscopy) are presented. The features of Raman spectra of saliva for the studied groups of patients have been established. It is shown that the main markers of periodontitis are the lines of 1556 cm-1 and 1738 cm-1. The results of the research using Raman spectroscopy have been compared with the microscopic analysis.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123532371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Walking Robot with Propulsors Based on IPMC Actuators 基于IPMC作动器的带推进器步行机器人
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906873
V. Kalyonov, Yuriy D. Orekhov, I. Khmelnitskiy, N. I. Alekseev, A. P. Broyko, A. Lagosh, D. O. Testov, A. D. Shpakovsky
{"title":"Walking Robot with Propulsors Based on IPMC Actuators","authors":"V. Kalyonov, Yuriy D. Orekhov, I. Khmelnitskiy, N. I. Alekseev, A. P. Broyko, A. Lagosh, D. O. Testov, A. D. Shpakovsky","doi":"10.1109/EExPolytech.2019.8906873","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906873","url":null,"abstract":"The goal of this work was to investigate the possibility of using an ionic polymer-metal composite actuator (IPMC-actuator) as the main element of a motion drive for a walking robotic system. An actuator module was developed, which consists of two actuators connected in parallel and allowing a \"leg\" of the robotic system to move in two planes. Due to the use of an IMPC-actuator it was possible to develop a robotic system with dimensions of 118x114x62.4 mm, moving at a speed of 1 mm/s with a step of 33 mm and a mass of 70 g.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130265230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Semiconductor Sensor with Embedded Gate-control Potential Barriers 嵌入式门控势垒半导体传感器
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906803
D. Dyubo, O. Tsybin
{"title":"Semiconductor Sensor with Embedded Gate-control Potential Barriers","authors":"D. Dyubo, O. Tsybin","doi":"10.1109/EExPolytech.2019.8906803","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906803","url":null,"abstract":"In this paper, we study the processes related to a semiconductor sensor detection of electromagnetic wave irradiation. The distribution of the electric potential and the motion of the charge carriers in the semiconductor sensor with embedded gate-control potential barriers are under investigation using the computer simulation software Comsol Multiphysics. For the first time, the dependence on the accumulated dynamic charge concentration of the potential barriers height as a value used in analytical models was obtained. The appropriate mechanism of potential barriers and charge carrier dynamics and some possible applications were revealed and estimated.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132727611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Efficiency of a Class DE Power Amplifier for RF Signals with High Peak-to-Average Power Ratio 高峰均比射频信号的DE类功率放大器效率研究
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2019-10-01 DOI: 10.1109/EExPolytech.2019.8906856
R. Zudov
{"title":"Efficiency of a Class DE Power Amplifier for RF Signals with High Peak-to-Average Power Ratio","authors":"R. Zudov","doi":"10.1109/EExPolytech.2019.8906856","DOIUrl":"https://doi.org/10.1109/EExPolytech.2019.8906856","url":null,"abstract":"The class DE power amplifier (PA) has high efficiency only with certain parameters of the input signal, frequency and load resistance. Therefore, amplification of signals with high peak-to-average power ratio causes a violation of the zero voltage switching (ZVS) condition. This can reduce the efficiency of class DE PA. In particular, by using the analytical model it was found that PA efficiency depends significantly upon the value of transistor grading coefficient of a body junction diode. Moreover, after simulation, the range of the voltage was determined, at which the ZVS condition must be satisfied in order to minimize the power loss.","PeriodicalId":305685,"journal":{"name":"2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133849284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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