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2008 Global Symposium on Millimeter Waves最新文献

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Development of Large Bolometer Arrays for Submillimeter and Millimeter Astronomy 用于亚毫米和毫米天文的大型测辐射热计阵列的研制
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534592
F. Pajot, Y. Atik, C. Evesque, S. Lefranc, B. Leriche, B. Belier, L. Dumoulin, M. Piat, D. PRELE, A. Benoit, P. Camus, D. Santos, Yong Jin, M. Giard
{"title":"Development of Large Bolometer Arrays for Submillimeter and Millimeter Astronomy","authors":"F. Pajot, Y. Atik, C. Evesque, S. Lefranc, B. Leriche, B. Belier, L. Dumoulin, M. Piat, D. PRELE, A. Benoit, P. Camus, D. Santos, Yong Jin, M. Giard","doi":"10.1109/GSMM.2008.4534592","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534592","url":null,"abstract":"Access to new microelectronics facilities allows the development of large bolometer arrays for astronomy. The expected sensitivity increase is the key for the next generation of cameras at the focal plane of submillimeter and millimeter telescopes. We present here the research led in France in this domain.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"366 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115400387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrating Passive Components With Active Circuits Using Standard Silicon Process for Millimeter-Wave Applications 集成无源元件与有源电路使用标准硅工艺毫米波应用
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534638
C. Meng, S. Tseng
{"title":"Integrating Passive Components With Active Circuits Using Standard Silicon Process for Millimeter-Wave Applications","authors":"C. Meng, S. Tseng","doi":"10.1109/GSMM.2008.4534638","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534638","url":null,"abstract":"Several passive components based on the quarter- wavelength transmission line can be integrated with active circuits for millimeter-wave applications. Passive components such as Marchand baluns, quadrature couplers, and rat-race hybrids are directly implemented on the standard low-resisitivity (~10 Omegaldr cm) silicon substrate. New circuit design concepts such as balanced loss and distortionless transmission line are applied to tolerate the unavoidable loss and thus the size reduction is achieved because of the high effective dielectric constant.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115175349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Half Mode Substrate Integrated Waveguide Gunn Oscillator 半模衬底集成波导Gunn振荡器
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534544
C. Zhong, Jun Xu, Zhiyuan Yu, Maoyan Wang, Yong Zhu
{"title":"Half Mode Substrate Integrated Waveguide Gunn Oscillator","authors":"C. Zhong, Jun Xu, Zhiyuan Yu, Maoyan Wang, Yong Zhu","doi":"10.1109/GSMM.2008.4534544","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534544","url":null,"abstract":"Based on the half mode substrate integrated waveguide (HMSIW) technology, a new type of Gunn diode oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator's performance is characterized by medium level output power of 13.2 dBm, phase noise less than -97.3 dBc/Hz@100 kHz and frequency excursion 40 MHz over temperature range from 10 C to 75 C. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127138272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Two dimensional numerical simulation of temperature dependency of MOSFET out-put characteristics MOSFET输出特性温度依赖性的二维数值模拟
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534640
H. Djelti, M. Feham, A. Ouslimani, A. Kasbari
{"title":"Two dimensional numerical simulation of temperature dependency of MOSFET out-put characteristics","authors":"H. Djelti, M. Feham, A. Ouslimani, A. Kasbari","doi":"10.1109/GSMM.2008.4534640","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534640","url":null,"abstract":"In this paper we present the impact of temperature on out-put MOSFET characteristics over a wide range of temperature from 300 degK to 500 degK, by using Femlab and Freefem+ tools. We have studied in particular current-voltage characteristics (ID-VDS and ID-VGS), longitudinal electric field, and the variation of drain current with temperature. We have observed a good agreement between the model of Femlab and Freefem+ tools. Two-dimensional numerical simulations are used to describe significant physics phenomena in the characteristics for 0.25 mum gate length NMOSFET transistor.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127411370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of SIS Mixers for SMA 400 - 520 GHz Band SMA 400 - 520 GHz频段SIS混频器的设计
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534595
C. Li, C.M. Chang, M. Wang, S. Shi
{"title":"Design of SIS Mixers for SMA 400 - 520 GHz Band","authors":"C. Li, C.M. Chang, M. Wang, S. Shi","doi":"10.1109/GSMM.2008.4534595","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534595","url":null,"abstract":"SIS junction mixers were designed for SMA 400 - 520 GHz band, which is similar to ALMA band 8 (380 - 500 GHz). Two schemes were used to tune out the parasitic capacitance of the junction. When shunt inductors were employed, the input resistance is equal to R (close to R0), much higher than R/(omegaRC)2 when series inductors were used. This facilitates the impedance matching between the junction and the waveguide probe. Waveguide probe design was varied to achieve a low feed-point impedance to match the junction resistance. The optimal feed- point impedances for lower receiver noise temperature were also discussed.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123452567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Microstrip Patch Array with Aperture-Coupled Feeding for Ka-Band Applications 用于ka波段应用的带孔耦合馈电的微带贴片阵列
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534664
G. Dai, S.L. Lu, M. Xia
{"title":"A Microstrip Patch Array with Aperture-Coupled Feeding for Ka-Band Applications","authors":"G. Dai, S.L. Lu, M. Xia","doi":"10.1109/GSMM.2008.4534664","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534664","url":null,"abstract":"A Ka-band microstrip patch antenna array with aperture-coupled feeding is presented in this paper. For a single element antenna, an impedance bandwidth (return loss < -10 dB) of 2 GHz is achieved at the central operating frequency of 30 GHz. A 2times2 array and a 4times4 array are simulated, and larger array with more elements is theoretically estimated. Potential applications of the designed Ka-band patch array include the satellite digital communications.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124884172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Back Propagation Neural Network Model of Non-Periodic Defected Ground Structure 非周期缺陷地基结构的反向传播神经网络模型
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534548
Li Yuan, Liu Jiao, Ye Chunhui
{"title":"The Back Propagation Neural Network Model of Non-Periodic Defected Ground Structure","authors":"Li Yuan, Liu Jiao, Ye Chunhui","doi":"10.1109/GSMM.2008.4534548","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534548","url":null,"abstract":"Presently, electromagnetic field numerical value analysis methods such as finite difference time-domain (FDTD) method are generally used to calculate the DGS, although these methods are accurate, they are also computationally expensive. In this paper, a neural network model of a novel defected ground structure is established. Since the neural network model has the advantages of great precision and effectiveness, the developed design model can be used to take the place of the FDTD method of the DGS, being a kind of aid tool of circuit design. The neural network models of two different non-periodic DGS have been developed, at the same time the circuit of the according DGS is designed and manufactured. The result of computer simulation and product measurements are obtained to demonstrate the effectiveness of the method.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125624053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT 变质HEMT沟道材料及栅极凹槽结构的改性研究
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1093/ietele/e91-c.5.683
S. Choi, Y. Baek, Jung-hun Oh, Min Han, S. Bang, J. Rhee
{"title":"Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT","authors":"S. Choi, Y. Baek, Jung-hun Oh, Min Han, S. Bang, J. Rhee","doi":"10.1093/ietele/e91-c.5.683","DOIUrl":"https://doi.org/10.1093/ietele/e91-c.5.683","url":null,"abstract":"In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess. The modified channel consists of the In0.53Ga0.47 As and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47 As, we have adopted the InP-composite channel in the MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths of MHEMT's. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT's. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27 %, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fmax was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30 % compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129907202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis the Interference of Soft-Spectrum Adaptation Modulated UWB into IEEE 802.11 a WLAN 软频谱自适应调制UWB对IEEE 802.11 a无线局域网的干扰分析
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534627
Changguo Wu, Gangxing Jiang, Hongbo Zhu
{"title":"Analysis the Interference of Soft-Spectrum Adaptation Modulated UWB into IEEE 802.11 a WLAN","authors":"Changguo Wu, Gangxing Jiang, Hongbo Zhu","doi":"10.1109/GSMM.2008.4534627","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534627","url":null,"abstract":"Cognitive radio(CR) technologies have recently received much attention. In this paper, we consider the interference of soft-spectrum adaptation (SSA) modulation ultra wide-band (UWB) to wireless local area network (WLAN). We investigate the effect of the interference to WLAN under the model and scenario proposed by TG 1/8 group. From the simulation, the proposed method has simple structure and shows good performance. By designing a proper pulse waveform and coding with high frequency efficiency according to the spectrum mask canceling the band of IEEE 802.11a, the interference by UWB will be minimize.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133207278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance Analysis of Multi-service Cellular Network System with Varying Traffic Characteristics under QoS Constraints QoS约束下具有不同业务特性的多业务蜂窝网络系统性能分析
2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534628
S. T. Win
{"title":"Performance Analysis of Multi-service Cellular Network System with Varying Traffic Characteristics under QoS Constraints","authors":"S. T. Win","doi":"10.1109/GSMM.2008.4534628","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534628","url":null,"abstract":"Further wireless networks are expected to support different multimedia, voice and data services. During a different traffic call setup, a base station (BS) must decide whether to admit a new call or a handover call. This depends on the availability of bandwidth to support the call. The amount of bandwidth allocated to a new call is based on various statistical properties of the call and on the number of calls already in the session. When the aggregate call arrival rates exceed the BS's capacity, a BS can loss a call which is specified by its QoS requirements. This paper proposed the design of bandwidth allocation policies (overflow and rearrangement strategies) for multi-service mobile cellular environment and analytical formulations have been derived to compute QoS parameters such as blocking probabilities of each type of calls and carried traffic. Simulation models are also developed with Monte Carlo simulation method. The performance measures in this paper include blocking probabilities of each type of calls under varying offered traffics.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134355902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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