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[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium最新文献

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A comparison of two-dimensional planar, axisymmetric and three-dimensional spreading resistances 二维平面、轴对称和三维扩展阻力的比较
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172852
Dennis P. Nelson, W.A. Sayers
{"title":"A comparison of two-dimensional planar, axisymmetric and three-dimensional spreading resistances","authors":"Dennis P. Nelson, W.A. Sayers","doi":"10.1109/STHERM.1992.172852","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172852","url":null,"abstract":"Planar and axisymmetric spreading resistances used to predict the peak temperature of semiconductor devices mounted to substrates are given. The results are presented in a nondimensional form for a range of substrate thicknesses relative to device size, device spacing or substrate size relative to device size, and external resistance varying from an isothermal condition up to a uniform heat flux at the base of the substrate. These two-dimensional results are then compared to three-dimensional results for rectangular devices of varying aspect ratio. The comparisons show what conditions are required to accurately approximate three-dimensional problems using two-dimensional models.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133644106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Development of a high performance air cooled heat sink for multi-chip modules 用于多芯片模块的高性能风冷散热器的研制
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172849
S. Kitajo, Y. Takeda, Y. Kurokawa, T. Ohta, H. Mizunashi
{"title":"Development of a high performance air cooled heat sink for multi-chip modules","authors":"S. Kitajo, Y. Takeda, Y. Kurokawa, T. Ohta, H. Mizunashi","doi":"10.1109/STHERM.1992.172849","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172849","url":null,"abstract":"High-performance inversely trapezoidal heat sinks for multi-chip modules under forced air cooling have been developed by means of thermal simulation. Heat sink specifications were assumed as follows: 60 mm (length)*60 mm (width)*17 mm (height) with less than 0.8 degrees C/W thermal resistance at 3 m/s air velocity. A simple thermal simulation method for a heat sink was first developed to perform thermal flow analysis in the air and heat transfer analysis. The accuracy of this simulation was within +or-20%, and a novel plate-format heat sink with inversely trapezoidal fins has been successfully designed using this simulation.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124051461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Analysis of thermal vias in high density interconnect technology 高密度互连技术中的热过孔分析
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172851
S. Lee, T. Lemczyk, M. Yovanovich
{"title":"Analysis of thermal vias in high density interconnect technology","authors":"S. Lee, T. Lemczyk, M. Yovanovich","doi":"10.1109/STHERM.1992.172851","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172851","url":null,"abstract":"An analytical approach is presented for the thermal modeling of via networks used in removing heat from chips in high density multichip module designs. The thermal resistances of the components making up a typical via network cell are accurately determined by closed form expressions. The complete thermal resistance between the die and substrate can be determined by constructing the unit cells in a combination of series and parallel paths, allowing for the thermal spreading effect through the via network, and the epoxy and planarizing layer thermal resistances. Computed predictions are compared with numerical and experimental results, and good agreement was achieved by using this accurate and simple methodology.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116453679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 57
Transient thermal measurements using thermooptic and thermoelectric effects 利用热光学和热电效应进行瞬态热测量
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172866
C.C. Lee, T. Su, M. Chao
{"title":"Transient thermal measurements using thermooptic and thermoelectric effects","authors":"C.C. Lee, T. Su, M. Chao","doi":"10.1109/STHERM.1992.172866","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172866","url":null,"abstract":"Two techniques for transient thermal measurements are presented. The measured thermal responses are compared with the response calculated using a 3-dimensional transient temperature solution derived previously. One measurement technique employs the thermooptic effect of the change of optical index of refraction with temperature. Even though this change is very small, in the range of 10/sup -5// degrees C, its effect can be transformed into a large variation in the optical signal by proper design. The other method utilizes the thermoelectric effect of electrical resistance change with temperature. This change is in the range of 4*10/sup -3// degrees C, adequate to provide a signal for measurement. The intrinsic response time of both techniques is a few nanoseconds, thus providing a means to study the rapid initial temperature rise caused by a step source power.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124220718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A clarification of the adiabatic heat transfer coefficient as applied to convective cooling of electronics 澄清了应用于电子设备对流冷却的绝热传热系数
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172842
A. Ortega, B. Lall
{"title":"A clarification of the adiabatic heat transfer coefficient as applied to convective cooling of electronics","authors":"A. Ortega, B. Lall","doi":"10.1109/STHERM.1992.172842","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172842","url":null,"abstract":"The objective is to clarify the concept of adiabatic heat transfer coefficient and its application by reviewing its origins and by examining a series of numerical experiments on a well-defined model problem. The model problem consists of a series of one-dimensional thermal sources spaced on one wall of a parallel planes channel. Flow into the channel is either forced by an external blower, or induced into the channel by buoyancy, that is by natural drafting. Results are examined for the base case of non-conducting substrate. The effects of substrate conduction and local buoyancy effects are subsequently introduced and examined. The important conclusion is that the adiabatic heat transfer coefficient is not dependent on temperature history, depending solely on local hydrodynamics. Two important factors which influence the adiabatic heat transfer coefficient are local buoyancy and board conduction effects. Results are discussed for the cases of buoyancy induced channel flow. The usefulness of the adiabatic heat transfer coefficient for the case of natural convection is considered.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131113896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
F/sub opt/-a thermal optimization factor for microelectronic packages F/sub opt/-微电子封装的热优化因子
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172856
T. Lemczyk, J. Culham, S. Lee, M. Yovanovich
{"title":"F/sub opt/-a thermal optimization factor for microelectronic packages","authors":"T. Lemczyk, J. Culham, S. Lee, M. Yovanovich","doi":"10.1109/STHERM.1992.172856","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172856","url":null,"abstract":"The authors provide a more coherent standard for microelectronic package performance assessment. An optimum package thermal resistance and optimization factor are defined, which can be used by a thermal designer to measure the variation of performance under given system constraints. These system constraints and the individual thermal resistances existing for any package-on-board arrangement are outlined, and shown to hold for both single-chip package and multi-chip package designs. Junction-to-ambient thermal resistance values obtained from natural convection equipment, which may differ, must lie within the bounds determined by this study.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132018083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermal performance of power packages-single-inline package as a case study 电源封装的热性能——以单内联封装为例研究
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172855
B. Chambers, M. Mahilingam
{"title":"Thermal performance of power packages-single-inline package as a case study","authors":"B. Chambers, M. Mahilingam","doi":"10.1109/STHERM.1992.172855","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172855","url":null,"abstract":"The authors focus on the experimental results obtained from thermal resistance measurements made on 23 lead single-in-line (SIP-23) power packages. The experimental techniques employed in making the measurements are reviewed followed by a presentation of the experimental results. A generalized discussion is included of the effects of the various parameters on the package's thermal performance. These results are compared to other similar power packages such as the TO-218 and TO-220 discrete device packages. Some simple empirical models which may be of value to system designers are included.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121999269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Enhanced heat transfer for electronic devices operating inside enclosures 增强了在外壳内运行的电子设备的传热
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172843
S. Witzmann, T. Nicoletta, B. Mack
{"title":"Enhanced heat transfer for electronic devices operating inside enclosures","authors":"S. Witzmann, T. Nicoletta, B. Mack","doi":"10.1109/STHERM.1992.172843","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172843","url":null,"abstract":"The authors outline an experimental study of temperature field for populated printed circuit cards activated inside pen and hermetic enclosures. The study of the heat transfer at the device level shows that the transfer phenomenon is dominated by the generation of the thermal plume around heated small bodies. The authors compare some simple methodologies that dissipate or extract energy from the thermal plume and investigate their effect in thermal transfer enhancement. Some practical recommendations for potential electronic equipment designers are made. For all the cases under study the final temperature can be expressed as a summation of the device adiabatic temperature and the adiabatic temperature rise. The adiabatic temperature rise is independent of the device position inside the array.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130361121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Thermal analysis of a substrate with power dissipation in the vias 考虑过孔中功耗的基板热分析
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172853
R. Brewster, R. Sherif
{"title":"Thermal analysis of a substrate with power dissipation in the vias","authors":"R. Brewster, R. Sherif","doi":"10.1109/STHERM.1992.172853","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172853","url":null,"abstract":"The authors present an analysis of the temperature field resulting from the Joule heating in a metal wire surrounded by a non-heat-generating (electrically insulating) material. Exact analytical solutions are given for when the heat generation rate is constant and linearly dependent on the temperature. Asymptotic solutions are given for arbitrarily temperature-dependent heat generation, when the insulating material thermal conductivity is much less than the thermal conductivity of the wire. A numerical example of practical interest is considered. It is shown that neglecting the Joule heating in the wires can result in significant underestimation of the temperature. The effect of temperature on the electrical resistivity of the wire is shown to be negligible. The phenomenon of thermal runaway is also examined using stability theory and is shown to be unimportant in practical circumstances.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129870682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Modelling of the two-phase cooling of a power semiconductor and its associated evaporators 功率半导体及其相关蒸发器的两相冷却建模
[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI: 10.1109/STHERM.1992.172848
T. Jomard, U. Eckes, E. Touvier, M. Lallemand
{"title":"Modelling of the two-phase cooling of a power semiconductor and its associated evaporators","authors":"T. Jomard, U. Eckes, E. Touvier, M. Lallemand","doi":"10.1109/STHERM.1992.172848","DOIUrl":"https://doi.org/10.1109/STHERM.1992.172848","url":null,"abstract":"Cooling by nucleate boiling is one of the most efficient ways of removing heat from a component. A theoretical study and a model have been developed to determine heat transfer in semiconductors. Heat is removed from the semiconductor via two evaporators joining the press-pack package. The two-phase flow is evaluated inside the channels formed by the evaporators and the semiconductor. The heat transfer modeling has led to a knowledge of the semiconductor temperature evolution versus the dissipated power. The optimization of the channel shape has permitted an increase in evaporator performance.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124048867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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