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Modern Concepts in Material Science最新文献

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The Erroneous Banishment of Plastics 错误地禁止使用塑料
Modern Concepts in Material Science Pub Date : 2019-03-20 DOI: 10.33552/mcms.2019.01.000508
W. Eevers
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引用次数: 0
Effect of Rare Earth Doping on the Optical Quality of А2В6 Semiconductors 稀土掺杂对А2В6半导体光学质量的影响
Modern Concepts in Material Science Pub Date : 2019-03-12 DOI: 10.33552/mcms.2019.01.000507
Y. Gnatenko
{"title":"Effect of Rare Earth Doping on the Optical Quality of А2В6 Semiconductors","authors":"Y. Gnatenko","doi":"10.33552/mcms.2019.01.000507","DOIUrl":"https://doi.org/10.33552/mcms.2019.01.000507","url":null,"abstract":"It is well known that rare earth elements (RE) have a characteristic configuration of their electron shell, namely, 4d104fn5s25p66s2 (n=1-14), where 4f-electrons form an unfilled electronic shell shielded by several filled shells [1,2]. Thus, doping of semiconductor materials with RE leads to the appearance of a system of discrete energy levels associated with the ground and excited states of RE ions. These states are strongly localized and weakly perceive the vibrations of the crystalline lattice. Therefore, the emission of RE ions, caused by optical transitions from excited to ground states of the ions, includes narrow lines that are commonly used for developing laser systems [3]. In addition, the development of LEDs for a wide spectral region requires using А3В5 semiconductors with wide band gaps doped with triply-charged RE ions. In this case, isovalent substitution of cations occurs.","PeriodicalId":297187,"journal":{"name":"Modern Concepts in Material Science","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116701047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal Insulator Transition in Vanadium Dioxide Hydrated by Means of the Plasma-Immersion Ion Implantation Method 等离子体浸没离子注入法水合二氧化钒金属绝缘体跃迁
Modern Concepts in Material Science Pub Date : 2019-03-01 DOI: 10.33552/mcms.2019.01.000506
A. Pergament
{"title":"Metal Insulator Transition in Vanadium Dioxide Hydrated by Means of the Plasma-Immersion Ion Implantation Method","authors":"A. Pergament","doi":"10.33552/mcms.2019.01.000506","DOIUrl":"https://doi.org/10.33552/mcms.2019.01.000506","url":null,"abstract":"In the work, we explore the modification of the structure of vanadium dioxide films, as well as the metal-semiconductor phase transition in them, when hydrated by the method of plasma-immersion ion implantation. Based on a detailed X-ray analysis and the Raman spectra of the initial and hydrated films, it is shown that the plasma-ion modification of the transition and the metallization of vanadium dioxide (at a hydrogen concentration above 10at. %) are most likely associated with electron-correlation effects amplified by hydrogen implantation and an increase in the free charge carrier density in the material. Meanwhile, the structural changes at the transition practically do not manifest themselves: the hydrated metallic vanadium dioxide remains in the monoclinic phase. The results of plasma-immersion implantation are compared with experiments where other methods of hydration of vanadium dioxide are applied.","PeriodicalId":297187,"journal":{"name":"Modern Concepts in Material Science","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127870801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measuring of Polarization and Ohmic Potentials for the Diagnostics of Corrosion Protection of the Metal Structures 偏振电位和欧姆电位的测量在金属结构腐蚀防护诊断中的应用
Modern Concepts in Material Science Pub Date : 2018-12-07 DOI: 10.33552/mcms.2018.01.000503
R. Dzhala
{"title":"Measuring of Polarization and Ohmic Potentials for the Diagnostics of Corrosion Protection of the Metal Structures","authors":"R. Dzhala","doi":"10.33552/mcms.2018.01.000503","DOIUrl":"https://doi.org/10.33552/mcms.2018.01.000503","url":null,"abstract":"The polarization potential (РР) is regarded as the main criterion of corrosion protection of metal structures in conducting media. However, the potential between the reference electrode and the metal of the protected structure is measured with a voltmeter and contains, in addition to the polarization component, the Ohmic drop of the voltage. But, only the polarization of the surface causes the effect of cathodic protection. Therefore, the Ohmic component should be removed from the measured potential difference for the precise control of the protected structure. To solve the problem of measuring PP is known methods of compensating, relaxation, auxiliary electrodes and calculations, which have disadvantages.","PeriodicalId":297187,"journal":{"name":"Modern Concepts in Material Science","volume":"33 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114302426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advance of the Modified g-C3N4 Materials by Doping WOx (X=0.1, 0.2, 0.3) WOx (X=0.1, 0.2, 0.3)改性g-C3N4材料的研究进展
Modern Concepts in Material Science Pub Date : 2018-11-30 DOI: 10.33552/MCMS.2018.01.000501
Jizhou Jiang
{"title":"Advance of the Modified g-C3N4 Materials by Doping WOx (X=0.1, 0.2, 0.3)","authors":"Jizhou Jiang","doi":"10.33552/MCMS.2018.01.000501","DOIUrl":"https://doi.org/10.33552/MCMS.2018.01.000501","url":null,"abstract":"","PeriodicalId":297187,"journal":{"name":"Modern Concepts in Material Science","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129485194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Infrared Radiation on the Hydrogen in Thin Films Double Barriers Based Melt Silicone-Germany 红外辐射对双势垒基熔融硅薄膜中氢的影响-德国
Modern Concepts in Material Science Pub Date : 1900-01-01 DOI: 10.33552/mcms.2018.01.000504
Abasov Fp
{"title":"Effect of Infrared Radiation on the Hydrogen in Thin Films Double Barriers Based Melt Silicone-Germany","authors":"Abasov Fp","doi":"10.33552/mcms.2018.01.000504","DOIUrl":"https://doi.org/10.33552/mcms.2018.01.000504","url":null,"abstract":"Possibilities of plasma chemical deposition of α-Si1-x Gex:H (x=0÷1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in p-i-n structures of solar cell. The optical properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in α-Si:H and α-Ge:H films is measured. The α-Si:H and а-Si0,88Ge1,2:H films were used to fabricate three-layer solar with an element area of 1,3 sm2 and an efficiency (η) of 9.5 %.","PeriodicalId":297187,"journal":{"name":"Modern Concepts in Material Science","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122582723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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