{"title":"Broadband Three-Way LC-Ladder Divider on a Double-Sided PCB","authors":"T. Kawai, Yosuke Okada, A. Enokihara","doi":"10.1109/RFIT.2018.8524041","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524041","url":null,"abstract":"This paper describes wideband three-way Wilkinson power dividers using LC-ladder circuits. The proposed dividers consist of multi-section LC-ladder circuits between input and output ports, and their output ports are connected each other through external circuits composed of series RL circuits. By connecting the appropriate external circuits in accordance with the number of LC-ladder circuits, the proposed dividers can be realized extremely wideband operation. In order to verify the design procedure, wideband three-way Wilkinson power dividers are simulated and fabricated at VHF-band. As results of simulation and experiment, we can obtain broadband characteristics with a relative bandwidth of over 60%, which are near agreement with the theoretical results.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124345564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Drain Resistance Degradation Modeling Procedure of LDMOS's","authors":"H. Aoki, M. Shimasue","doi":"10.1109/RFIT.2018.8524107","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524107","url":null,"abstract":"A complete aging circuit simulation method using a drain resistance degradation model of laterally-diffused MOSFETs (LDMOS's) is presented. The drain resistance degradation caused by the hot electron injection (HCI) effect in the drain drift region has been formulated, and then implemented in SPICE. A practical circuit aging simulation procedure has been demonstrated with LDMOS measurements for a fundamental DC-DC converter circuit, effectively.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115019683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"300GHz-Band CMOS Wireless Transceiver","authors":"M. Fujishima","doi":"10.1109/RFIT.2018.8524074","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524074","url":null,"abstract":"300-GHz band, a frequency range exceeding 275 GHz, is currently unallocated. Research aiming at 100-Gbps-class wireless communication using that frequency band has attracted attention. We have realized the chipset of 300 GHz band wireless transceiver using CMOS integrated circuit although the high frequency characteristics of silicon transistors used in CMOS integrated circuits are inferior to that of transistors of compound semiconductors. The drawback of this property was overcome by circuit technique. In this paper, after describing the 300 GHz band CMOS transceiver circuit, we introduce the module for connecting the CMOS chip to the waveguide antenna.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122003936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Shaker, Hany Amen Ghali, D. Elsheakh, H. Elsadek
{"title":"Tri-Band Microstrip Monopole Antenna for Energy Harvesting","authors":"M. Shaker, Hany Amen Ghali, D. Elsheakh, H. Elsadek","doi":"10.1109/RFIT.2018.8524029","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524029","url":null,"abstract":"This paper presents three resonant bands of microstrip monopole antenna for radio frequency energy harvesting applications. The proposed antenna has a good performance in GSM-900/1800 and GPS/UMTS bands. The rectifier circuit design consist of several rectifier branches to collect the largest amount of RF power, due to the non-linearity and the complex input impedance of the rectifying circuit, Therefore, an improved impedance matching technique is introduced which is aimed to improve the performance of the rectifier with a varying condition. The proposed antenna is printed on FR4 substrate with modified ground plane to achieve suitable impedance bandwidth. Two V shaped arms with optimized angle are integrated on the L shaped monopole radiator. Each arm is responsible for certain resonating frequency. The antenna operates at three frequency bands (GSM 900/1800, GPS and UMTS bands) with reflection coefficient below — 10 dB.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130456893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","authors":"","doi":"10.1109/rfit.2018.8524025","DOIUrl":"https://doi.org/10.1109/rfit.2018.8524025","url":null,"abstract":"","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121063676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei-Ting Tsai, Chong-Yi Liou, Zheng-An Peng, Shau-Gang Mao
{"title":"Intermodulation Distortion Analysis for Power Amplifier with Various Collector Voltages","authors":"Wei-Ting Tsai, Chong-Yi Liou, Zheng-An Peng, Shau-Gang Mao","doi":"10.1109/RFIT.2018.8524080","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524080","url":null,"abstract":"This study proposes a power amplifier with the various collector voltages technique to linearize the power amplifier. The third-order intermodulation term in the behavior model of the power transistor is analyzed to demonstrate the minimum third-order intermodulation distortion for the power amplifier with the various collector voltages technique. This various collector voltages technique for reducing the third-order intermodulation distortion of the power amplifier is experimentally and theoretically verified. A SiGe BiCMOS power amplifier with the various collector voltages technique is designed and implemented. Results demonstrate that the linear output power of the proposed power amplifier is 2.3 dB higher than the power amplifier with the fixed supply voltage.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123025144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Cryogenic Receiver with Superconducting Filter","authors":"H. Kayano","doi":"10.1109/RFIT.2018.8524121","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524121","url":null,"abstract":"We have developed small cryogenic receiver with superconducting dual band pass filter. This superconducting filter passes thru only protect bands of both 1.4 GHz and 1.6 GHz for radio astronomy. Also L-band is useful band for mobile telephone. Therefore, L-band observation by the radio telescope is difficult for strong RFI of mobile telephone signal. We report a RFI test with the superconducting filter. The RFI test was experimented in urban area, suburban area, and mountain area in north Thailand. We experimented with the use of horn antenna and radio telescope antenna. We demonstrated an effectiveness of superconducting filter for countermeasure against RFI.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128124877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Shaker, Hany Amen Ghali, D. Elsheakh, H. Elsadek
{"title":"Multiband Coplanar Monopole Antenna for Energy Harvesting","authors":"M. Shaker, Hany Amen Ghali, D. Elsheakh, H. Elsadek","doi":"10.1109/RFIT.2018.8524049","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524049","url":null,"abstract":"This paper presents multiband monopole antenna for radio frequency energy harvesting applications. The proposed antenna has good performance in wireless communication bands. The antenna is printed on FR4 substrate with matching L shaped stubs, to achieve suitable impedance bandwidth. Two symmetric stubs with width equal to 0.6 mm and five slot arms are etched on the radiator surface, each arm is responsible for certain resonant frequency. The antenna operates at five operating bands (GPS band, DSC band, ISM band, WiFi band and WiMax band) with reflection coefficients below — 10 dB. The simulation result of the rectifier demonstrate that are operating with Triple-band RF energy harvesting system for three bands wide-band at 2.5 GHz, 3.7 GHz and 5.8 GHz. This antenna shows good matching between simulation and experimental results. The proposed rectenna can provide high RF-DC conversion efficiency which is suitable for RF energy harvesting applications.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134418192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Integrated Butler Matrix and $1times 4$ Antenna Array for Board-to-Board Communication in the mmWave-range","authors":"B. Klein, M. Jenning, R. Hahnel, D. Plettemeier","doi":"10.1109/RFIT.2018.8524054","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524054","url":null,"abstract":"An integrated butler matrix with a $1times 4$ antenna array consisting of log-spiral antenna elements is presented. The design is taped-out in a state-of-the-art indium phosphide technology of Teledyne. By the implementation of the butler matrix as a passive phase shifting element, the whole system enables beam-steering capabilities in the frequency range from 165 GHz to 195 GHz. Therefore, this system allows the design of adaptive and energy-efficient wireless links for board-to-board communication in the mmW-range.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"46 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134064478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Ka-Band 360° Digitally-Controlled Passive Phase Shifter in 65-nm CMOS","authors":"Jiajun Zhang, Dixian Zhao","doi":"10.1109/RFIT.2018.8524072","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524072","url":null,"abstract":"A digitally-controlled 360° passive phase shifter is presented. The phase shifter is developed from coplanar waveguide with ground shield (CPWG). The propagation constant is shifted by switching between two sets of ground lines while the characteristic impedance is kept constant by placing additional switched capacitors. MOS switches are optimized to achieve a flat insertion loss with accurate phase shift. The phase shifter is fabricated in 65-nm CMOS and occupies a core area of 0.24 mm2. Measurement results show that the phase shifter operates with 6.7° steps and an RMS phase error of 1.3° across 360° range at 35 GHz. The average insertion loss is 14 dB at 35 GHz with an RMS gain error of 1.3 dB. In addition, the phase shifter operates with 5.2° steps and an RMS phase error of 1.0° across 290° range at 28 GHz. The average insertion loss is 10.7 dB and the RMS gain error is 0.4 dB at 28 GHz.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115213045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}