一种LDMOS漏阻退化建模方法

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2018-08-01 DOI:10.1109/RFIT.2018.8524107

H. Aoki, M. Shimasue

{"title":"一种LDMOS漏阻退化建模方法","authors":"H. Aoki, M. Shimasue","doi":"10.1109/RFIT.2018.8524107","DOIUrl":null,"url":null,"abstract":"A complete aging circuit simulation method using a drain resistance degradation model of laterally-diffused MOSFETs (LDMOS's) is presented. The drain resistance degradation caused by the hot electron injection (HCI) effect in the drain drift region has been formulated, and then implemented in SPICE. A practical circuit aging simulation procedure has been demonstrated with LDMOS measurements for a fundamental DC-DC converter circuit, effectively.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Drain Resistance Degradation Modeling Procedure of LDMOS's\",\"authors\":\"H. Aoki, M. Shimasue\",\"doi\":\"10.1109/RFIT.2018.8524107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A complete aging circuit simulation method using a drain resistance degradation model of laterally-diffused MOSFETs (LDMOS's) is presented. The drain resistance degradation caused by the hot electron injection (HCI) effect in the drain drift region has been formulated, and then implemented in SPICE. A practical circuit aging simulation procedure has been demonstrated with LDMOS measurements for a fundamental DC-DC converter circuit, effectively.\",\"PeriodicalId\":297122,\"journal\":{\"name\":\"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2018.8524107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2018.8524107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种利用横向扩散mosfet (LDMOS’s)漏极电阻退化模型的完整老化电路仿真方法。提出了热电子注入(HCI)效应在漏极漂移区引起的漏极电阻下降，并在SPICE中实现。用LDMOS测量了一个基本的DC-DC转换电路，有效地验证了一个实际的电路老化仿真程序。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Drain Resistance Degradation Modeling Procedure of LDMOS's

A complete aging circuit simulation method using a drain resistance degradation model of laterally-diffused MOSFETs (LDMOS's) is presented. The drain resistance degradation caused by the hot electron injection (HCI) effect in the drain drift region has been formulated, and then implemented in SPICE. A practical circuit aging simulation procedure has been demonstrated with LDMOS measurements for a fundamental DC-DC converter circuit, effectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

自引率

0.00%

发文量