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Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)最新文献

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TWT manufacturing methods moving from development to production 行波管制造方法从开发到生产
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316220
J. Cusick, W. Gasta
{"title":"TWT manufacturing methods moving from development to production","authors":"J. Cusick, W. Gasta","doi":"10.1109/IVELEC.2004.1316220","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316220","url":null,"abstract":"Summary form only given. Gearing up correctly from the development of a TWT to production can help obtain a stronghold on the target market and set up that product for success. Method sheets, travel cards and statistical process control (SPC), when employed properly, lead the way. Method sheets illustrate exactly what technicians are to do, step by step, pictorially. This eliminates any guesswork in their part and any room for error. Travel cards are used as a tool for the production employee to record data that is directly linked into the SPC software. The collected data is then measured and analyzed. Any variation in processes is captured in real time. This enables us to monitor quality and keep processes consistent. Several divisions of CPI have been using method sheets for years. In the transition from development to production the millimeter wave group of CPI has begun to implement the use of method sheets, travel cards and SPC software. This paper explains the methods used at CPI, in particular the millimeter wave group, and the improvements we are making to produce for the future.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130851098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An improved concept for a higher-order mode IOT 高阶模式物联网的改进概念
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316335
H. Bohlen, E. Wright
{"title":"An improved concept for a higher-order mode IOT","authors":"H. Bohlen, E. Wright","doi":"10.1109/IVELEC.2004.1316335","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316335","url":null,"abstract":"Summary form only given. Several years ago, the prototype of a higher-order mode inductive output tube (HOM-IOT), which was developed at CPI, suffered from various technological flaws, including warping of the large annular control grid structure. Means to prevent the warping of the grid have been found since then and the development of a 10 MW long-pulse, 1.3 GHz MBK (multibeam klystron) is being carried out at CPI for the TESLA project, sponsored by DESY, Hamburg, and this has led to an invention that permits the focusing of off-axis electron beams. This makes it possible to replace the quasi-annular beam in the HOM-IOT with an adequate number of electron beams which greatly increases the likelihood of the next super-power HOM-IOT being successful.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128599632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
2-D large-signal modeling of VKP-8291A using TESLA 基于TESLA的VKP-8291A二维大信号建模
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316354
R. Begum, E. Eisen, A. Vlasov, S. Cooke, B. Stockwell, T. Antonsen, B. Levush
{"title":"2-D large-signal modeling of VKP-8291A using TESLA","authors":"R. Begum, E. Eisen, A. Vlasov, S. Cooke, B. Stockwell, T. Antonsen, B. Levush","doi":"10.1109/IVELEC.2004.1316354","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316354","url":null,"abstract":"A P-band klystron built for the Spallation Neutron Source (SNS) application was modeled using TESLA to predict small- and large-signal performances of the device. This particular klystron has six cavities, including one second-harmonic cavity. The cavity parameters as measured in the cold-test experiment were entered as input to TESLA. Measured axial magnetic field as simulated by Maxwell 2-D was input to the code. This paper presents the TESLA output, including particle trajectory plots, electric field plots at different gaps, and the variation of output power with time steps for the device under consideration. Results will also be presented on the effects of different input variables, such as the total number of axial grids, radial grids, and modes on the TESLA-predicted output power of the device.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130627069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cold electron emission process in CVD diamond films CVD金刚石薄膜中的冷电子发射过程
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316299
J. Yater, A. Shih, J. Butler, P. Pehrsson
{"title":"Cold electron emission process in CVD diamond films","authors":"J. Yater, A. Shih, J. Butler, P. Pehrsson","doi":"10.1109/IVELEC.2004.1316299","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316299","url":null,"abstract":"The development of robust cold cathodes would provide improved efficiency, lifetime, and design flexibility for a broad range of devices including RF vacuum electronic devices and flat panel displays. Diamond has been identified as a uniquely promising cold cathode material due to the negative electron affinity (NEA) that is present at hydrogenated diamond surfaces. In this study, we investigate the cold electron emission process in CVD diamond using electron transmission spectroscopy. Specifically, we inject electrons into thin CVD diamond films using a 0-20 keV electron gun, and we then detect and analyze the secondary electrons that are transmitted through the films. In particular, the intensity and energy distribution of the transmitted electrons are measured as a function of the incident beam parameters (E/sub 0/, I/sub 0/) and analyzed using Monte Carlo simulations. Reflected secondary-electron-emission spectroscopy (SEES) measurements are also used to evaluate the surface properties of the films.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127216197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Seventy percent efficient Ku-band and C-band traveling wave tubes for satellite communications 70%效率的ku波段和c波段行波管用于卫星通信
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316308
R. Benton, M. Choi, J. Feicht, U. Hallsten, H. Limburg, K.P. Mallon, W. McGeary, W. Menninger, X. Zhai
{"title":"Seventy percent efficient Ku-band and C-band traveling wave tubes for satellite communications","authors":"R. Benton, M. Choi, J. Feicht, U. Hallsten, H. Limburg, K.P. Mallon, W. McGeary, W. Menninger, X. Zhai","doi":"10.1109/IVELEC.2004.1316308","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316308","url":null,"abstract":"Boeing Electron Dynamic Devices, Inc. offers fully qualified, production-ready Ku-band and C-band TWTs for space communications with demonstrated efficiencies exceeding 70%. The C-band 8555HX is a 30-100 W class TWT that has been qualified in a conduction-cooled package with a mass of 790 grams (no leads). The 8555HX performs at better than 70% efficiency across 300 MHz. The Ku-band model, 88150HX, is a 100-150 W class TWT which is qualified in a radiation-cooled package. The first two 88150HX builds both performed at better than 70% efficiency across a 1 GHz operating band. These efficiency improvements are only intended as a stepping stone on the way to better performance.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114741028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New 2.5D code for modeling of nonlinear multisignal amplification in a wideband helix traveling wave tube 新的2.5维代码用于模拟宽带螺旋行波管中的非线性多信号放大
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316240
A. Rozhnev, N. Ryskin, D. V. Sokolov, D. Trubetskov, A. S. Pobedonostsev, S. A. Rumyantsev, V. B. Khomitch
{"title":"New 2.5D code for modeling of nonlinear multisignal amplification in a wideband helix traveling wave tube","authors":"A. Rozhnev, N. Ryskin, D. V. Sokolov, D. Trubetskov, A. S. Pobedonostsev, S. A. Rumyantsev, V. B. Khomitch","doi":"10.1109/IVELEC.2004.1316240","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316240","url":null,"abstract":"Broadband high-gain traveling wave tube (TWT) amplifiers are widely employed in communications and other related applications. For design of such devices, numerical modeling and optimization tools are of great importance. In this paper, we describe a new 2.5D code for simulation of a helix TWT.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124021691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Radar systems trade-offs vacuum electronics vs. solid state 雷达系统在真空电子与固态电子之间进行权衡
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316173
V. Gregers-Hansen
{"title":"Radar systems trade-offs vacuum electronics vs. solid state","authors":"V. Gregers-Hansen","doi":"10.1109/IVELEC.2004.1316173","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316173","url":null,"abstract":"During the first 50 years of radar, vacuum electronics devices (VEDs) were the major source of power for their final power amplifiers (FPA). While VEDs continue to be used in many current operational radars, solid-state transmitters are becoming a viable alternative in many applications due to their advantages in availability, maintainability, modularity, and, sometimes, performance. In most cases, a solid-state transmitter must be part of an integrated radar design process. Attempts to replace high-power vacuum tube transmitters in an existing radar, with footprint- and performance-equivalent solid-state versions, have proven difficult since VED based transmitters traditionally have been low duty cycle and solid-state transmitters need to be operated at a relatively high duty-cycle in order to be cost-competitive. This talk reviews system level pros and cons between vacuum tubes and solid-state devices for new radar systems. The important issues of cost, maintainability, and reliability, are application specific and thus difficult to address in general terms.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"64 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115520930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Development of counter-streaming two beam oscillator 逆流双束振荡器的研制
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316208
Y. Shin, S. T Han, S. Jeon, K. Jang, J. So, G. Park
{"title":"Development of counter-streaming two beam oscillator","authors":"Y. Shin, S. T Han, S. Jeon, K. Jang, J. So, G. Park","doi":"10.1109/IVELEC.2004.1316208","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316208","url":null,"abstract":"Summary form only given. We propose a novel oscillator using two electron beams reversely traveling for high frequency applications, particularly in the millimeter/sub-millimeter region. In the oscillator, the electron beams interact with high-Q reentrant cavities coupled through coupling-slots The counter-streaming electron beams mutually talking through the coupled-cavities thus compose the internal feedback, based on a noise seed induced by the electron beams. The parallel coupled-cavity is geometrically investigated to optimize the circuit dimensions in the Ka-band. The optimum coupled-cavity respectively has 29.92 GHz and 31.95 GHz of eigen frequencies at /spl Delta//spl phi/=0 and /spl Delta//spl phi/=/spl pi/, where /spl Delta//spl phi/ is the phase shift per cavity. The start oscillation current of this novel device is about twice as low as that of a conventional two-cavity oscillator with external feedback. The start oscillation current reduction in this novel device provides the possibility of higher frequency applications.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115121114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Selfexcitation of wideband traveling-wave tubes near "/spl pi/" point under conditions of presence the stopband in system dispersion 在系统色散中存在阻带的情况下，“/spl pi/”点附近宽带行波管的自激
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316231
E. Blokhina, A. Rozhnev
{"title":"Selfexcitation of wideband traveling-wave tubes near \"/spl pi/\" point under conditions of presence the stopband in system dispersion","authors":"E. Blokhina, A. Rozhnev","doi":"10.1109/IVELEC.2004.1316231","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316231","url":null,"abstract":"Special attention is paid to problem of selfexcitation in wideband TWTs. Such problem is connected with necessity of generating signal stability in practice for any application. However, there are several mechanisms, responsible for unwanted oscillations origination. Among principal mechanism one can mention following: oscillation near driven signal frequency or one of its harmonics, oscillations near the edge of the band, generating of backward wave harmonic and others. To mentioned mechanisms one can also refer the parasitic oscillations, connected with opportunity of simultaneous effective between electron beam interaction with forward and backward waves near frequency of /spl pi/ point (the point of synchronism of fundamental spatial harmonic and (-1) harmonic of backward wave). We examine the linear theory of TWT selfexcitation with stopband in dispersion near /spl pi/ point.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123276088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High frequency solid state devices [microwave and mm-wave devices] 高频固态器件〔微波及毫米波器件〕
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786) Pub Date : 2004-04-27 DOI: 10.1109/IVELEC.2004.1316172
R. Trew
{"title":"High frequency solid state devices [microwave and mm-wave devices]","authors":"R. Trew","doi":"10.1109/IVELEC.2004.1316172","DOIUrl":"https://doi.org/10.1109/IVELEC.2004.1316172","url":null,"abstract":"In this paper are described solid state devices which have wide applications as RF sources and amplifiers in microwave and millimeter-wave systems. Active devices can be fabricated using a variety of diode and transistor structures, and these devices are widely used in a variety of commercial and military applications. Device development has been closely linked to advances in semiconductor materials growth and processing technology and many devices for mm-wave application are only possible due to the precise nanoscale dimension control afforded by advanced materials growth technology, such as molecular-beam epitaxy (MBE) and organo-metallic chemical vapor deposition (OMCVD). Fine line lithography techniques, such as electron-beam lithography, permit the definition of nanoscale device dimensions. Advanced materials technology has also provided the ability to fabricate heterostructures that permit the advantages of multiple material layers to be optimized for device applications. High performance diodes and transistors are now available for use from UHF into the mm-wave spectrum, approaching THz frequencies.","PeriodicalId":283559,"journal":{"name":"Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128312302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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