CVD金刚石薄膜中的冷电子发射过程

J. Yater, A. Shih, J. Butler, P. Pehrsson
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引用次数: 0

摘要

坚固的冷阴极的开发将为包括射频真空电子设备和平板显示器在内的广泛设备提供更高的效率、寿命和设计灵活性。由于氢化金刚石表面的负电子亲和(NEA),金刚石被认为是一种独特的有前途的冷阴极材料。在这项研究中,我们利用电子透射光谱研究了CVD金刚石的冷电子发射过程。具体来说,我们使用0-20 keV电子枪将电子注入CVD金刚石薄膜中,然后检测和分析通过薄膜传输的二次电子。特别是,透射电子的强度和能量分布作为入射光束参数(E/sub 0/, I/sub 0/)的函数进行了测量,并使用蒙特卡罗模拟进行了分析。反射二次电子发射光谱(SEES)测量也用于评价薄膜的表面性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cold electron emission process in CVD diamond films
The development of robust cold cathodes would provide improved efficiency, lifetime, and design flexibility for a broad range of devices including RF vacuum electronic devices and flat panel displays. Diamond has been identified as a uniquely promising cold cathode material due to the negative electron affinity (NEA) that is present at hydrogenated diamond surfaces. In this study, we investigate the cold electron emission process in CVD diamond using electron transmission spectroscopy. Specifically, we inject electrons into thin CVD diamond films using a 0-20 keV electron gun, and we then detect and analyze the secondary electrons that are transmitted through the films. In particular, the intensity and energy distribution of the transmitted electrons are measured as a function of the incident beam parameters (E/sub 0/, I/sub 0/) and analyzed using Monte Carlo simulations. Reflected secondary-electron-emission spectroscopy (SEES) measurements are also used to evaluate the surface properties of the films.
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