Journal of Vacuum Science & Technology B最新文献_第9页

Novel wet transfer technology of manufacturing flexible suspended two-dimensional material devices 制造柔性悬浮二维材料装置的新型湿法转移技术

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0003087

Yingtao Wang, Mona Savalia, Xian Zhang

引用次数: 0

Effect of ultraviolet light on field emission performance and lifetime of lateral field emitter devices 紫外线对侧向场发射器件场发射性能和寿命的影响

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0003142

R. Bhattacharya, M. Turchetti, Matthew Yeung, P. Donald Keathley, Karl K. Berggren, Jim Browning

{"title":"Effect of ultraviolet light on field emission performance and lifetime of lateral field emitter devices","authors":"R. Bhattacharya, M. Turchetti, Matthew Yeung, P. Donald Keathley, Karl K. Berggren, Jim Browning","doi":"10.1116/6.0003142","DOIUrl":"https://doi.org/10.1116/6.0003142","url":null,"abstract":"Lateral field emission devices have been characterized before and after ultraviolet (UV) light exposure. Two types of planar device structures, diode and bowtie, were studied. These nanoscale devices have 9–15 nm tip-to-tip (bowtie) or tip-to-collector (diode) dimensions with the tips fabricated from Au/Ti. Typical currents of 2–5 nA per tip at 6 V were measured. It was observed that after UV exposure, the collected current was reduced by >28% for the case of a bowtie device; whereas the current was reduced by >39% for the case of a diode device. This reduction can be attributed to water vapor desorption on the dielectric surface between the structures, which in turn reduces surface leakage. The Fowler–Nordheim plot showed a straighter line after UV exposure. After the I-V test, the UV-exposed devices were placed on lifetime tests in a vacuum of <10−8 Torr and were biased at 5 V DC. After 2600 h, an abrupt current decrease was observed: ∼25% for the case of the bowtie and ∼28% for the case of the diode device. Scanning electron microscope images of the bowtie and diode devices showed damage to the tips.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"242 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139020934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytic study of exposure contrast over feature edge in electron-beam lithography 电子束光刻技术特征边缘曝光对比度分析研究

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0003029

Soo-Young Lee

引用次数: 0

Shape tuning of large area silicon nanotip arrays through reactive ion etching 通过反应离子蚀刻技术调整大面积硅纳米芯片阵列的形状

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0003130

Giridhar Tulasi Ram Sankabathula, S. Valluri, Nick Norden, Stephen Binderup, A. Sumant, R. Divan, O. Mohsen, Philippe Piot, V. Korampally

{"title":"Shape tuning of large area silicon nanotip arrays through reactive ion etching","authors":"Giridhar Tulasi Ram Sankabathula, S. Valluri, Nick Norden, Stephen Binderup, A. Sumant, R. Divan, O. Mohsen, Philippe Piot, V. Korampally","doi":"10.1116/6.0003130","DOIUrl":"https://doi.org/10.1116/6.0003130","url":null,"abstract":"Nanostructures formed in silicon form an important class of structures that span a broad spectrum of application areas. Of these, columnar structures of silicon featuring tiplike apexes have their own niche applications. The ability to afford shape tunability for these structures further enhances their application potential. In this paper, we present our findings on the large area fabrication of silicon nanotips defined through microsphere lithography and shape tuned through a combination of different reactive ion etching (RIE) techniques. The self-sharpening mechanism of the tips when using nonplanar etch masks (microspheres) under anisotropic etching conditions is elucidated. We further show that depending on the manner of etching (continuous versus discrete multistep etch), identical anisotropic etching recipes produce vastly different tip morphologies. Hourglass-shaped silicon tips were obtained when silicon was subjected to anisotropic followed by isotropic etching conditions. Sharp silicon tips with tip apex radii on the order of 2 nm have been successfully realized when the RIE shape tuned tips were subjected to a series of oxidative sharpening steps.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139021265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation on the heat transfer characteristics of flexible vacuum glass based on cross-laminated microcavities 基于交叉层叠微腔的柔性真空玻璃传热特性研究

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0002937

Jun Zhang, Chenhui Liu, Chenchen Song, Xudi Wang, Rui Huang

{"title":"Investigation on the heat transfer characteristics of flexible vacuum glass based on cross-laminated microcavities","authors":"Jun Zhang, Chenhui Liu, Chenchen Song, Xudi Wang, Rui Huang","doi":"10.1116/6.0002937","DOIUrl":"https://doi.org/10.1116/6.0002937","url":null,"abstract":"Vacuum glass is a key component of energy-efficient buildings. At present, the traditional vacuum glass (VG) has some problems, such as side edge heat transfer, poor thermal insulation in small sizes, high cost of indium alloy edge sealing, and poor adaptability to the rigid structure to environments, which limits its application in buildings. Vacuum interlayer heat transfer is thickness-independent. Therefore, increasing the transfer path and thermal resistance of the support structure under micrometer gaps achieves effective thermal insulation. In this study, a vacuum glass with a cross-laminated microcavity structure was proposed. The cross-laminated structure has a total thickness of several hundred micrometers and is made of polycarbonate. The heat transfer and stress-strain of the cross-laminated vacuum glass (CLVG) and VG are investigated. The results indicate that the CLVG accomplished a lower heat transfer coefficient compared with the VG at a size smaller than 30 × 30 cm2. In addition, the CLVG is edge-effect-free. As a flexible structure, the CLVG can be easily applied to existing buildings. This study contributes to the exploration of new structures for the vacuum glass.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"93 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139016634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of H+ ion bombardment on GaAs photocathode surface with Cs-O and Cs-F activation layers H+ 离子轰击对带有 Cs-O 和 Cs-F 活化层的砷化镓光电阴极表面的影响

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0003173

Kaimin Zhang, Yijun Zhang, Qiming Wang, Jingzhi Zhang, Shiman Li, Yunsheng Qian, Feng Shi, G. Jiao, Lei Yan, Cheng Feng

{"title":"Effects of H+ ion bombardment on GaAs photocathode surface with Cs-O and Cs-F activation layers","authors":"Kaimin Zhang, Yijun Zhang, Qiming Wang, Jingzhi Zhang, Shiman Li, Yunsheng Qian, Feng Shi, G. Jiao, Lei Yan, Cheng Feng","doi":"10.1116/6.0003173","DOIUrl":"https://doi.org/10.1116/6.0003173","url":null,"abstract":"To characterize the degree of damage to the GaAs photocathode surface caused by H+ ion back bombardment in the electron-bombarded complementary metal–oxide–semiconductor (EBCMOS), Stopping Range of Ions in Matter software based on the Monte Carlo method was used to investigate the effect of H+ ions with different incident energies on the surface of Cs-O (Cs-F) activated GaAs photocathode. During the simulations, different Cs/O (Cs/F) ratios ranging from 1:1 to 4:1 were considered. The sputtering rates, backscattering electrons, and longitudinal and lateral displacements along with vacancies/ions were investigated. According to the analysis of sputtering rates and vacancies, the optimal Cs/O ratio and Cs/F ratio are 3:1 and 4:1, respectively. With the increase in the incident energy, the backscattering rates decrease, the peak value of the H+ ion distribution decreases, while the corresponding peak position increases, and the peak value of the vacancy distribution increases first and then decreases, while the corresponding peak position increases. In addition, the projected ranges, and lateral and longitudinal displacements increase with the increase in incident energies, while the projected ranges may far exceed the straggle lengths and make the ion trajectory become more and more concentrated in the high incident energy region. This work helps to understand the degeneration mechanism of the GaAs photocathode operating in EBCMOS.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"327 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139022881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes 用于金属和 III-V 薄膜光电阴极的校准真空中量子效率系统

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0002904

Atif Rasheed, Christopher Benjamin, Ibrahim G. Elhoussieny, Y. Ramachers, Gavin R. Bell

引用次数: 0

Full-band modeling of AM and FM interband cascade laser frequency combs 调幅和调频带间级联激光频率梳的全波段建模

Journal of Vacuum Science & Technology B Pub Date : 2023-12-01 DOI: 10.1116/6.0003176

Michael Povolotskyi, I. Vurgaftman

引用次数: 0

Effect of annealing on focused ion beam induced surface damages in silicon analyzed by micro-Raman spectroscopy 用微拉曼光谱分析了退火对聚焦离子束引起的硅表面损伤的影响

Journal of Vacuum Science & Technology B Pub Date : 2023-09-01 DOI: 10.1116/6.0002895

Yoshiharu Goshima, S. Kashiwagi, Takahiro Namazu

引用次数: 0

Maximizing the performance of a field emission device by profiling the emitter’s height distribution 通过分析发射极的高度分布来最大化场发射器件的性能

Journal of Vacuum Science & Technology B Pub Date : 2023-09-01 DOI: 10.1116/6.0003016

Sergey Filippov, F. F. Dall’Agnol, Eugeni O. Popov, A. G. Kolosko, T. A. de Assis

引用次数: 0

Journal of Vacuum Science &amp; Technology B最新文献

Journal of Vacuum Science & Technology B最新文献