通过反应离子蚀刻技术调整大面积硅纳米芯片阵列的形状

Giridhar Tulasi Ram Sankabathula, S. Valluri, Nick Norden, Stephen Binderup, A. Sumant, R. Divan, O. Mohsen, Philippe Piot, V. Korampally
{"title":"通过反应离子蚀刻技术调整大面积硅纳米芯片阵列的形状","authors":"Giridhar Tulasi Ram Sankabathula, S. Valluri, Nick Norden, Stephen Binderup, A. Sumant, R. Divan, O. Mohsen, Philippe Piot, V. Korampally","doi":"10.1116/6.0003130","DOIUrl":null,"url":null,"abstract":"Nanostructures formed in silicon form an important class of structures that span a broad spectrum of application areas. Of these, columnar structures of silicon featuring tiplike apexes have their own niche applications. The ability to afford shape tunability for these structures further enhances their application potential. In this paper, we present our findings on the large area fabrication of silicon nanotips defined through microsphere lithography and shape tuned through a combination of different reactive ion etching (RIE) techniques. The self-sharpening mechanism of the tips when using nonplanar etch masks (microspheres) under anisotropic etching conditions is elucidated. We further show that depending on the manner of etching (continuous versus discrete multistep etch), identical anisotropic etching recipes produce vastly different tip morphologies. Hourglass-shaped silicon tips were obtained when silicon was subjected to anisotropic followed by isotropic etching conditions. Sharp silicon tips with tip apex radii on the order of 2 nm have been successfully realized when the RIE shape tuned tips were subjected to a series of oxidative sharpening steps.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"4 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Shape tuning of large area silicon nanotip arrays through reactive ion etching\",\"authors\":\"Giridhar Tulasi Ram Sankabathula, S. Valluri, Nick Norden, Stephen Binderup, A. Sumant, R. Divan, O. Mohsen, Philippe Piot, V. Korampally\",\"doi\":\"10.1116/6.0003130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanostructures formed in silicon form an important class of structures that span a broad spectrum of application areas. Of these, columnar structures of silicon featuring tiplike apexes have their own niche applications. The ability to afford shape tunability for these structures further enhances their application potential. In this paper, we present our findings on the large area fabrication of silicon nanotips defined through microsphere lithography and shape tuned through a combination of different reactive ion etching (RIE) techniques. The self-sharpening mechanism of the tips when using nonplanar etch masks (microspheres) under anisotropic etching conditions is elucidated. We further show that depending on the manner of etching (continuous versus discrete multistep etch), identical anisotropic etching recipes produce vastly different tip morphologies. Hourglass-shaped silicon tips were obtained when silicon was subjected to anisotropic followed by isotropic etching conditions. Sharp silicon tips with tip apex radii on the order of 2 nm have been successfully realized when the RIE shape tuned tips were subjected to a series of oxidative sharpening steps.\",\"PeriodicalId\":282302,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology B\",\"volume\":\"4 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

硅纳米结构是一类重要的结构,其应用领域十分广泛。其中,具有尖顶的硅柱状结构有其独特的应用领域。这些结构的形状可调性进一步增强了其应用潜力。在本文中,我们介绍了通过微球光刻技术大面积制造硅纳米尖端的研究成果,并结合不同的反应离子刻蚀(RIE)技术对其形状进行了调整。我们阐明了在各向异性蚀刻条件下使用非平面蚀刻掩模(微球)时尖端的自锐化机制。我们进一步表明,根据蚀刻方式(连续蚀刻与离散多步蚀刻)的不同,相同的各向异性蚀刻配方会产生截然不同的尖端形态。在对硅进行各向异性蚀刻后再进行各向同性蚀刻的条件下,可获得沙漏状的硅尖。当对 RIE 形状调整后的尖端进行一系列氧化锐化步骤时,成功实现了尖端顶点半径为 2 nm 的尖锐硅尖端。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Shape tuning of large area silicon nanotip arrays through reactive ion etching
Nanostructures formed in silicon form an important class of structures that span a broad spectrum of application areas. Of these, columnar structures of silicon featuring tiplike apexes have their own niche applications. The ability to afford shape tunability for these structures further enhances their application potential. In this paper, we present our findings on the large area fabrication of silicon nanotips defined through microsphere lithography and shape tuned through a combination of different reactive ion etching (RIE) techniques. The self-sharpening mechanism of the tips when using nonplanar etch masks (microspheres) under anisotropic etching conditions is elucidated. We further show that depending on the manner of etching (continuous versus discrete multistep etch), identical anisotropic etching recipes produce vastly different tip morphologies. Hourglass-shaped silicon tips were obtained when silicon was subjected to anisotropic followed by isotropic etching conditions. Sharp silicon tips with tip apex radii on the order of 2 nm have been successfully realized when the RIE shape tuned tips were subjected to a series of oxidative sharpening steps.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信