{"title":"VSWR Robust Linearizer to improve Switch IMD by >20dB","authors":"T. Meier, Atif Mehmood, Jonas Kaps","doi":"10.1109/rfic.2019.8701799","DOIUrl":"https://doi.org/10.1109/rfic.2019.8701799","url":null,"abstract":"A novel circuit design approach is able to reduce intermodulation products of FET based RF switches by more than 20dB. Isolation remains unaffected, insertion loss adder is 0.1dB only and robust VSWR performance is shown. The necessary additional die area is very small keeping the cost adder at a minimum.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134077648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 65nm CMOS Continuous-Time Electro-Optic PLL (CT-EOPLL) with Image and Harmonic Spur Suppression for LIDAR","authors":"Ali Binaie, Sohail Ahasan, H. Krishnaswamy","doi":"10.1109/rfic.2019.8701771","DOIUrl":"https://doi.org/10.1109/rfic.2019.8701771","url":null,"abstract":"An integrated continuous-time electro-optic phase-locked loop (CT-EOPLL) is presented that features image and harmonic spur suppression, and is used in a frequency-modulated continuous-wave (FMCW) LIDAR. The proposed EOPLL has its loop bandwidth equal to its reference frequency, which enables it to relax the trade-off between chirp bandwidth and Mach-Zehnder (MZ) delay and consequently reduce the area and loss associated with the silicon-photonic delay implementation by 10×. Image and harmonic spurs are rejected through single-sideband (SSB) and harmonic-reject (HR) mixing techniques. This EO-PLL is integrated in 65nm CMOS technology, suppresses the highest spur by more than 25dB, and is used in a LIDAR system that can detect an object at ranges exceeding 3.3 meters with an RMS depth precision of 558µm at 2m distance and 9.4mm depth resolution.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133910005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jieqiong Du, Jia Zhou, X. S. Wang, C. Wong, H. Chen, C. Jou, Mau-Chung Frank Chang
{"title":"A Compact Single-Ended Dual-band Receiver with Crosstalk and ISI Reductions for High-density I/O Interfaces","authors":"Jieqiong Du, Jia Zhou, X. S. Wang, C. Wong, H. Chen, C. Jou, Mau-Chung Frank Chang","doi":"10.1109/rfic.2019.8701749","DOIUrl":"https://doi.org/10.1109/rfic.2019.8701749","url":null,"abstract":"A compact single-ended dual-band receiver is presented, consisting of one baseband using PAM-2 signaling and a coherent RF band using PAM-2/PAM-4 signaling. Exploiting the orthogonality between different bands and between adjacent PCB channels, the receiver reduces crosstalk and relaxes equalization requirements, enabling low-BER data transmission at frequencies where channel loss and crosstalk are high. The receiver adopts a passive-mixer-first architecture to improve the linearity and a flipped source-follower-based low-pass filter to improve the energy efficiency. Occupying 0.004 µm2 in TSMC 28nm technode, the proposed single-ended receiver achieves 0.45 pJ/bit at 9 Gb/s/pin for closely spaced 5-inch FR-4 channels and 0.6 pJ/bit at 6 Gb/s/pin for lossy and strongly coupled 22-inch FR-4 channels.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133174376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sangyeop Lee, K. Takano, S. Hara, R. Dong, S. Amakawa, T. Yoshida, M. Fujishima
{"title":"A −40-dBc Integrated-Phase-Noise 45-GHz Sub-Sampling PLL with 3.9-dBm Output and 2.1% DC-to-RF Efficiency","authors":"Sangyeop Lee, K. Takano, S. Hara, R. Dong, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/rfic.2019.8701745","DOIUrl":"https://doi.org/10.1109/rfic.2019.8701745","url":null,"abstract":"This paper presents a millimeter-wave (mmW) sub-sampling PLL in 40 nm CMOS. Sub-sampling PLL reduces the in-band phase noise due to the charge pump lower than the ordinary N2× when frequency is multiplied by N. Two sub-sampling phase detectors (SSPD) and charge pumps (SSCP) are employed to cancel mixing products due to sub-sampling around the VCO output tone and to enhance loop gain. The out-of-band phase noise, dictated by the VCO phase noise, is reduced by employing a VCO consisting of transmission-line resonators, large MOSFET switches, and inverse-class-F output matching. The proposed PLL, operating at 45 GHz, achieves −40-dBc integrated phase noise (0.1 kHz–40 MHz), 3.9-dBm output power, and 2.1% DC-to-RF efficiency.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122337282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Purushothaman, E. Klumperink, Berta Trullas Clavera, B. Nauta
{"title":"A Sub-mW All-Passive RF Front End with Implicit Capacitive Stacking Achieving 13 dB Gain, 5 dB NF and +25 dBm OOB-IIP3","authors":"V. Purushothaman, E. Klumperink, Berta Trullas Clavera, B. Nauta","doi":"10.1109/RFIC.2019.8701860","DOIUrl":"https://doi.org/10.1109/RFIC.2019.8701860","url":null,"abstract":"This paper presents a sub-mW mixer-first RF front-end that exploits a novel capacitive stacking technique in an altered bottom-plate N-path filter/mixer to achieve passive voltage gain and high-linearity at low noise figure. Capacitive stacking is realized implicitly by reading out the voltage from the bottom-plate of N-path capacitors instead of their top-plate, which provides a 2x gain at the read-out capacitors. Additional passive voltage gain is achieved using impedance upconversion while improving the out-of-band linearity performance of small switches. With no other active circuitry, only clock generation circuits determine the total power consumption of this RF front-end. A prototype is fabricated in GF22 nm FDSOI technology. Operating at fLO= 1 GHz, the prototype achieves a voltage gain of 13 dB, 5 dB Noise Figure and +25/+66 dBm Out-of-band IIP3/IIP2 at 160 MHz offset while consuming only 600 μW of power from a 0.8 V supply.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124315619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tianjun Wu, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Yi-ming Yu, K. Kang
{"title":"A 20 ~ 43 GHz VGA with 21.5 dB Gain Tuning Range and Low Phase Variation for 5G Communications in 65-nm CMOS","authors":"Tianjun Wu, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Yi-ming Yu, K. Kang","doi":"10.1109/rfic.2019.8701807","DOIUrl":"https://doi.org/10.1109/rfic.2019.8701807","url":null,"abstract":"This paper presents a broadband variable gain amplifier (VGA) with low phase variation in 65 nm CMOS technology. The mechanism of phase variation in CMOS VGA is analyzed. According to the analysis, the feedforward paths formed by parasitic capacitive and inductive couplings are one of the main factors that result in phase variation in CMOS VGA. In order to achieve low phase variation, a parasitic capacitor elimination technique is proposed to remove the feedforward path formed by gate-drain parasitic capacitor. Besides, an isolation enhancement layout technique is proposed to minimize the inductive coupling and parasitic capacitors in the layout of the variable gain stage. As results, the measured phase variation is 0.2° ~ 2° in 18 GHz ~ 37 GHz and 0.2° ~ 5.4° in 18 GHz ~ 45 GHz when the gain variation range is 21.5 dB. The measured peak gain is 14.5 dB with 3-dB bandwidth of 20 GHz ~ 43 GHz. The gain ripple in 3-dB bandwidth is < 2.5 dB. The noise figure and input-referred P1dB are 5.5 dB and -16.5 dBm in the maximum gain state, respectively. The chip consumes 30.8 mW from 1.1 V voltage supply and the core area is 370 um × 930 um.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128498036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Ruffino, Yatao Peng, F. Sebastiano, M. Babaie, E. Charbon
{"title":"A 6.5-GHz Cryogenic All-Pass Filter Circulator in 40-nm CMOS for Quantum Computing Applications","authors":"A. Ruffino, Yatao Peng, F. Sebastiano, M. Babaie, E. Charbon","doi":"10.1109/rfic.2019.8701836","DOIUrl":"https://doi.org/10.1109/rfic.2019.8701836","url":null,"abstract":"Cryogenic solid-state quantum processors require classical control and readout electronics; to achieve compactness and scalability, cryogenic integrated circuits have been recently proposed for this goal. Circulators are widely used in readout circuits, however they are typically discrete bulky devices, thus preventing miniaturization. To address this issue, we propose a fully integrated 40-nm CMOS 6.5-GHz circulator operating from 300 K to 4.2 K. At 300 K, it achieves a 2.2-dB insertion loss, an 18-dB isolation, and a 2.4-dB noise figure over the 1-dB bandwidth from 5.6 GHz to 7.4 GHz, with a core power of only 2.5 mW. This improves to 2.1 mW core power at 4.2 K, while showing 1.3-dB insertion loss and 17-dB isolation over the 1-dB bandwidth from 5.8 GHz to 7.6 GHz. The circuit achieves a record-low core power and a 1.6× wider fractional bandwidth than the state-of-the-art, thus allowing its use for multiple channels in power-constrained cryogenic refrigerators. These advances are enabled by a fully-passive architecture based on LC all-pass filters, allowing the use of a lower clock frequency than in prior art.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125498677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}