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2007 IEEE 20th International Vacuum Nanoelectronics Conference最新文献

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Field emission display prototype using screen printed carbon nanotube cathode 采用丝网印刷碳纳米管阴极的场发射显示样机
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1109/IVNC.2007.4480913
Jun Chen, J.X. Huang, C.L. Xu, W.L. Chen, G. Zhang, J. Yu, C. Duan, X. Xu, S. Deng, N. Xu
{"title":"Field emission display prototype using screen printed carbon nanotube cathode","authors":"Jun Chen, J.X. Huang, C.L. Xu, W.L. Chen, G. Zhang, J. Yu, C. Duan, X. Xu, S. Deng, N. Xu","doi":"10.1109/IVNC.2007.4480913","DOIUrl":"https://doi.org/10.1109/IVNC.2007.4480913","url":null,"abstract":"In this paper, mono-color and full-color FED prototypes of various sizes and resolutions have been fabricated. Video display has been demonstrated. The results show that the newly developed screen-printed CNT composite cathode is suitable for large area high resolution display application.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130827641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device 电荷补偿装置中硅场发射极阵列在气体环境中的电子发射特性
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1116/1.2897335
M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto
{"title":"Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device","authors":"M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto","doi":"10.1116/1.2897335","DOIUrl":"https://doi.org/10.1116/1.2897335","url":null,"abstract":"Field emitter arrays made of silicon (Si-FEAs) is a possible candidate for the space charge compensation device during ion implantation process for semiconductor devices, because they are free from metal contamination and have less out-gas. When operating in the ion implanter, Si-FEAs suffer from the pressure increase due to out-gassing from resist materials on a silicon wafer. We examined electron emission properties of the Si-FEAs in H2, CH4, CO, O2, or CO2 ambient, which are gases resulting from ion implantation to photoresist. In the work of Gotoh et al. (2006), Si-FEAs treated by CHF3 plasma (Si:C-FEA) were also examined. As a result, it was found that O2 ambient shortened the lifetime of the Si-FEA, but not for the lifetime of the Si:C-FEA. On the other hand, reductive ambient produced good properties of electron emission. In this study, we examined the lifetime of the Si-FEA and the Si:C-FEA in O2 ambient again to reproduce the previous result, and also the lifetime in C2H4 which is also one of the major gases in the implantation ambient.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132404856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation 碳负离子注入延长氧环境下硅场发射极阵列寿命
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1116/1.2837896
A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto
{"title":"Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation","authors":"A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto","doi":"10.1116/1.2837896","DOIUrl":"https://doi.org/10.1116/1.2837896","url":null,"abstract":"As the state of the art, ion implantation techniques require high-current ion beams with the lower energy, as the dimension of the devices becomes smaller. However, it is difficult to drive the lower-energy ion beams straightly, due to the huge ionic space charge. We proposed utilization of electron beam emitted from silicon field emitter arrays (Si-FEA) for compensation of the ionic positive space charge. One of the difficulties in utilizing Si-FEAs in ion implanter is such that the Si-FEA is easily affected by the residual gases, since the implantation generates gas molecules from photoresist materials. It is shown that the emission current decreases, especially in oxygen. One of the ways to protect the surface from oxidation is deposition of the material, which is highly resistant against oxidation, to the tip surface. We modified the surface of the Si-FEA by carbon negative ion implantation, in order to protect the surface from oxidation. In this paper we show the effectiveness of the carbon negative ion implantation to extend the lifetime of Si-FEAs.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132723146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Hydrogen ion production using carbon nanotube field emitter arrays 利用碳纳米管场发射阵列生产氢离子
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1109/IVNC.2007.4480908
J. Shaw, D. Hsu
{"title":"Hydrogen ion production using carbon nanotube field emitter arrays","authors":"J. Shaw, D. Hsu","doi":"10.1109/IVNC.2007.4480908","DOIUrl":"https://doi.org/10.1109/IVNC.2007.4480908","url":null,"abstract":"We have used micro-gated carbon nanotube field emitter arrays to produce hydrogen ions via two mechanisms; direct field ionization, and electron impact ionization. The changes in the fabrication process have improved the maximum emission current. The nanotubes are about 20nm in diameter (and so are likely multiwalled), and the gate electrodes are made of Cr. It is concluded that it should be possible to create very brief ion pulses using this method because the electron trajectory is short. Relatively long pulses will allow higher ionization rates. Because the arrays are small and the ion energy distribution is not too large, it should be possible to focus the ion beam to a spot size similar to the area of the array.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133177596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electroluminescence of silicon nanoclusters excited by tunneling carrier injection 隧道载流子注入激发的硅纳米团簇电致发光研究
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1116/1.2830626
V. Filip, H. Wong, C. Wong, D. Nicolaescu
{"title":"Electroluminescence of silicon nanoclusters excited by tunneling carrier injection","authors":"V. Filip, H. Wong, C. Wong, D. Nicolaescu","doi":"10.1116/1.2830626","DOIUrl":"https://doi.org/10.1116/1.2830626","url":null,"abstract":"In the present paper, we present an electroluminescence (EL) model for a tunneling carrier injection light-emitting diode based on insulator-embedded Si-nc.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130602972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Fabrication of a triode field emission display using screen-printing process 用丝网印刷工艺制造三极管场发射显示器
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1109/IVNC.2007.4481000
Geng Zhang, Jun Chen, S. Deng, J. She, N. Xu
{"title":"Fabrication of a triode field emission display using screen-printing process","authors":"Geng Zhang, Jun Chen, S. Deng, J. She, N. Xu","doi":"10.1109/IVNC.2007.4481000","DOIUrl":"https://doi.org/10.1109/IVNC.2007.4481000","url":null,"abstract":"Field emission display (FED) is a promising flat display technology and is considered to be the most suitable substitute for cathode ray tube (CRT). Using arrays of cold cathode to replace the electron guns in CRT, FED inherits the high display quality of CRT in Itoh, S., et al (2004). In order to achieve the high performances of full-color and low working voltage, gate-structured FED have been developed, such as normal-gate, under-gate, double-gate and planar-gate structures by Choi, Y. C., et al (2006). Also, considering low fabrication cost and large area feasibility, screen-printing method are employed by many researchers in Jung, Y. J., et al (2006). However, to realize a high-definition FED using an all-screening-printing process is still a challenge. In this paper, attempts are made to a planar-gate structure FED device using screen-printing process.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115233048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-voltage field emitter array operation in cold cathode TWT 冷阴极行波管低压场发射极阵列工作
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1109/IVNC.2007.4480910
D. Whaley, R. Duggal, C. Armstrong, C. Bellew, C. Holland, C. Spindt
{"title":"Low-voltage field emitter array operation in cold cathode TWT","authors":"D. Whaley, R. Duggal, C. Armstrong, C. Bellew, C. Holland, C. Spindt","doi":"10.1109/IVNC.2007.4480910","DOIUrl":"https://doi.org/10.1109/IVNC.2007.4480910","url":null,"abstract":"The implementation of field emitter arrays as an electron beam source for TWTs has experienced some advancement in the past decade. The recent development of low-voltage Spindt field emitter arrays however has made possible operation at significantly reduced voltages, potentially improving emitter reliability and lifetime. As such, L-3 Electron Devices, teamed with SRI International, is developing a Field Emitter Array TWT (FEA-TWT) employing these new cathodes in order to evaluate their operation in the TWT vacuum environment, to investigate TWT design specific to use of field emitter arrays, and to quantify several aspects of FEA-TWT performance that will be substantially different than those of conventional thermionic-based TWTs.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114711345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermionic electron emission from diamond by nano-seconds laser heating 纳秒激光加热金刚石热离子电子发射
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1109/IVNC.2007.4481014
B. Choi, W. Kang, I. L. Davis, J. Davidson, S. Hu, R. Pitz
{"title":"Thermionic electron emission from diamond by nano-seconds laser heating","authors":"B. Choi, W. Kang, I. L. Davis, J. Davidson, S. Hu, R. Pitz","doi":"10.1109/IVNC.2007.4481014","DOIUrl":"https://doi.org/10.1109/IVNC.2007.4481014","url":null,"abstract":"Investigating a vacuum thermionic emission behavior of a CVD diamond film on silicon substrate is reported. Under vacuum conditions and subjected to a moderate voltage bias, the bare silicon and diamond coated silicon samples show emission current pulses synchronized with excitation nano seconds 532 nm Nd:YAG pulsed laser. Nano second laser is applied to back side of the substrate and the emission site is screened from laser excitations. As increasing the pulse laser intensity, peak emission current increases monotonically. The Arrhenious plot of the peak emission current and the pulse laser intensity relationship follows Richardson's thermionic emission equation in the bare silicon sample. The diamond-coated sample shows two activation energies: one is the same as silicon and the other shows zero activation energy.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116321319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon nanotube clusters may give greater output power with large tunable bandwidth from photomixing in laser-assisted field emission 在激光辅助场发射中，碳纳米管团簇可以通过光混合获得更高的输出功率和更大的可调带宽
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1109/IVNC.2007.4480927
M. Hagmann
{"title":"Carbon nanotube clusters may give greater output power with large tunable bandwidth from photomixing in laser-assisted field emission","authors":"M. Hagmann","doi":"10.1109/IVNC.2007.4480927","DOIUrl":"https://doi.org/10.1109/IVNC.2007.4480927","url":null,"abstract":"Photomixing in laser-assisted field emission can readily cause a mixer current with a peak value that is 10% of the dc current, because of a resonance in the response and the intensification of the optical radiation by the antenna effect of the tip. It is concluded that photomixing in laser-assisted field emission acts as a constant current source, producing a mixer current that is independent of the impedance which is seen by this current. However, this impedance causes an electric field at the mixer frequency to also be present at the tip, and this field causes a second field emission current at the mixer frequency which opposes the mixer current.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116488344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication of field-emission cathode ray tube with an unique nano-structure carbon electron emitter 独特纳米结构碳电子发射器场发射阴极射线管的制备
2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI: 10.1116/1.2837853
H. Wang, N. Jiang, H. Hiraki, Y. Harada, H. Zhang, J. Wang, M. Haba, A. Hiraki
{"title":"Fabrication of field-emission cathode ray tube with an unique nano-structure carbon electron emitter","authors":"H. Wang, N. Jiang, H. Hiraki, Y. Harada, H. Zhang, J. Wang, M. Haba, A. Hiraki","doi":"10.1116/1.2837853","DOIUrl":"https://doi.org/10.1116/1.2837853","url":null,"abstract":"In this study, a field-emission cathode ray tube (FE-CRT) has been fabricated using novel kind of electron emitter called carbon nano-exit (CNX) which has been developed on nickel, silicon and SUS substrate with a special plasma chemical vapor deposition (CVD) technique. Scanning electron microscopy(SEM) image indicates that the emitters have an array density of 2times108/cm2.","PeriodicalId":281199,"journal":{"name":"2007 IEEE 20th International Vacuum Nanoelectronics Conference","volume":"41 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120867548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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