T. Pliška, D. Jundt, D. Fluck, P. Günter, D. Rytz, M. Fleuster, C. Buchal
{"title":"Low-temperature annealing of ion-implanted KNbO3 waveguides for second harmonic generation","authors":"T. Pliška, D. Jundt, D. Fluck, P. Günter, D. Rytz, M. Fleuster, C. Buchal","doi":"10.1063/1.359137","DOIUrl":"https://doi.org/10.1063/1.359137","url":null,"abstract":"KNbO3 is a very attractive material for frequency conversion from the near-infrared into the blue.1,2 Results on second harmonic generation (SHG) experiments in KNbO3 waveguides formed by ion implantation were reported in Ref. 3. Implantation of MeV He+ ions into KNbO3 leads to the formation of a barrier layer with decreased refractive index a few microns below the surface defining a barrier waveguide. The incident ions loose energy by inelastic scattering with electrons and ions of the target. Ionic collisions are assumed to lead to permanent lattice damage, e.g., vacancies and interstitials. According to TRIM calculations the density of vacancies due to collision events in the waveguiding region is expected to be on the order of 2 X 1020 cm-3 (2600 ppm). Thus the creation of absorption centers (point defects, e.g., vacancies) in the waveguide is inherently related to the formation of the barrier waveguide itself.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127023309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ultralong-distance soliton transmission","authors":"L. Mollenauer","doi":"10.1364/OFC.1995.TUR1","DOIUrl":"https://doi.org/10.1364/OFC.1995.TUR1","url":null,"abstract":"Summary not available.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121992930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Kuleshov, V. Mikhailov, V. G. Shcherbitsky, V. A. Sandulenko, T. Glynn
{"title":"Two types of emitting centers in Cr-doped Y2SiO5 laser crystals","authors":"N. Kuleshov, V. Mikhailov, V. G. Shcherbitsky, V. A. Sandulenko, T. Glynn","doi":"10.1364/cleo_europe.1994.ctuk77","DOIUrl":"https://doi.org/10.1364/cleo_europe.1994.ctuk77","url":null,"abstract":"Chromium-doped forsterite and YAG have been shown to be efficient laser materials for the near-infrared. The lasing centers were described as Cr4+ ions occupying tetrahedrally coordinated positions. Recently, laser action in Cr4+:Y2SiO5 was demonstrated at low temperatures1 and at room temperature.2 One of the most interesting features of this new laser material is the dependence of output spectra on the pump wavelength.1 Moreover, luminescence properties of the Cr: Y2SiO5 were studied in Refs. 3 and 4, but the origin of the second emission, clearly observed at low temperatures, was not determined. In this paper we discuss the spectroscopic properties of tetravalent chromium in two silicates Y2SiO5 (YSO) and Gd2SiO5 (GSO). The results of polarized optical absorption, emission, and lifetime measurements are presented.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132162701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Pollnau, E. Heumam, F. Heine, T. Danger, W. Lüthy, G. Huber, H. Weber
{"title":"Population mechanisms of the roomtemperature 551 nm Er:LiYF4 laser","authors":"M. Pollnau, E. Heumam, F. Heine, T. Danger, W. Lüthy, G. Huber, H. Weber","doi":"10.1364/cleo_europe.1994.ctuk65","DOIUrl":"https://doi.org/10.1364/cleo_europe.1994.ctuk65","url":null,"abstract":"One of the interests in solid-state laser physics has focused on diode-pumped blue and green upconversion lasers. At 551 nm upconversion-pumped laser operation in Er3+:LiYF4 at cryogenic temperatures has been reported, see e.g., Ref. 1. Recently room-temperature lasing under different excitation schemes has been achieved.2,3 However, the population and deexcitation processes of the upper laser level as well as the influence of reabsorption on the laser wavelength4 have not yet been quantitatively understood. In this paper the results of a computer simulation of the Er3+:LiYF4 laser are reported. The rate-equation scheme considers all excited levels up to 2H9/2, ground-state depletion, excited-state absorption (ESA) on the pump and laser wavelength, three upconversion processes, stimulated emission, and a realistic resonator design. From the computer simulation the population mechanisms of the laser system are analyzed and suggestions for a better laser performance are derived.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131258650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Zaldo, D. S. Gill, R. Eason, J. Mendiola, P. J. Chandler
{"title":"Growth of KNbO3 thin films on MgO by pulsed laser deposition","authors":"C. Zaldo, D. S. Gill, R. Eason, J. Mendiola, P. J. Chandler","doi":"10.1063/1.112280","DOIUrl":"https://doi.org/10.1063/1.112280","url":null,"abstract":"KNbO3 crystals have numerous uses in electro-optical, nonlinear optical, and photorefractive device applications. However, their widespread availability is somewhat limited due to their cost and growth difficulties. For applications requiring waveguide geometries, further problems exist, as KNbO3 is not particularly suited to general fabrication techniques such as diffusion or ion exchange. Ion beam implantation has produced optical waveguides,1 and liquid phase epitaxy techniques2 prove successful, but so far, the technique of Pulsed Laser Deposition (PLD) has not been applied to thin film KNbO3 growth. We report here the results of waveguide growth using this technique.3","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128633014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Ostroumov, T. Jensen, J. Meyn, G. Huber, V. Tsvetkov, I. Shcherbakov, A. I. Zagumennyi
{"title":"Comparison of neodymium-doped LaSc3(BO3)4 and CdVO4 crystals under diode laser pumping","authors":"V. Ostroumov, T. Jensen, J. Meyn, G. Huber, V. Tsvetkov, I. Shcherbakov, A. I. Zagumennyi","doi":"10.1364/cleo_europe.1994.ctua6","DOIUrl":"https://doi.org/10.1364/cleo_europe.1994.ctua6","url":null,"abstract":"Microchip lasers require a laser medium with high absorption and slope efficiency and a low threshold. From this point of view the materials of choice might be Nd: LaSc3(BO3)4 (Nd:LSB) and Nd:GdVO4 (Nd:GVO). The main features of these crystals are strong and broad absorption bands near 808 nm, a very high emission cross section at 1.06 μm for GVO, and broad emission line of LSB (Table 1). Under diode pumping 1-1.5 mm long GVO and LSB crystals demonstrate more than 850 mW of output power at 1.06 μm with a slope efficiency close to 60%.1,2 In order to achieve the same results with Nd:YAG it is necessary to use a 5-8 mm-long crystal. On the other hand both LSB and GVO suffer more from the thermal problems than YAG and require re-adjustment to compensate the thermal lens in order to maintain a good beam profile.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115634567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Spectral multiplexing of diode pumps to solid-state materials","authors":"R. Lavi, S. Tsadka, S. Jackel, R. Lallouz","doi":"10.1364/cleo_europe.1994.ctuk71","DOIUrl":"https://doi.org/10.1364/cleo_europe.1994.ctuk71","url":null,"abstract":"One of the major problems in diode-pumped solid state lasers is the limited brightness of the pump source. A common technique to increase the brightness is to couple the light of two diode lasers using a polarization sensitive optic. This technique has an obvious disadvantage— it will not work with unpolarized sources, such as fiber coupled diode lasers.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116696284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers","authors":"H. Summers, I. White, P. Rees, P. Blood","doi":"10.1364/cleo_europe.1994.cfe5","DOIUrl":"https://doi.org/10.1364/cleo_europe.1994.cfe5","url":null,"abstract":"The linewidth enhancement factor, α, is an important parameter of semiconductor laser operation as it affects the spectral linewidth, increasing it by a factor of (1 + α2) compared to the value predicted by the Schalow-Towns formula. Bulk lasers typically show α-values of 6–7; however, this value has been reduced by the use of quantum well structures to 3-4. Recently, the introduction of strained layers into quantum well lasers has led to further reductions in the α-value. In this work we analyse from first principles, for the first time, the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers operating in both cw and dynamic regimes. We measure α-values of ~2 in 1% compressively strained lasers operating d.c. and under modulation conditions. Agreement between experiment and theory is found.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127333268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Bespalov, A. Zhevlakov, D. O. Leschenko, E. Yutanova
{"title":"Spatial coherence of XeCl lasers","authors":"V. Bespalov, A. Zhevlakov, D. O. Leschenko, E. Yutanova","doi":"10.1364/cleo_europe.1994.ctuk111","DOIUrl":"https://doi.org/10.1364/cleo_europe.1994.ctuk111","url":null,"abstract":"As it is known, excimer lasers have a short time of inversion (order of 10 ns) and high gain because that stimulated emission occurs only at time of several passes on cavity. Let us consider the following model of energetic parameters and spatial coherence forming in flat mirrors cavity. Let us suppose that in initial moment of time the spontaneous emission near output mirror has intensity: where A is amplitude of spontaneous emission on cavity axis, a is the radius of laser cavity aperture, x is transverse coordinate.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125301542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Differential-absorption-Lidar monitoring of geophysical gas emissions","authors":"S. Svanberg","doi":"10.1364/cleo_europe.1994.cthb2","DOIUrl":"https://doi.org/10.1364/cleo_europe.1994.cthb2","url":null,"abstract":"Summary not available.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126833232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}