V. Ostroumov, T. Jensen, J. Meyn, G. Huber, V. Tsvetkov, I. Shcherbakov, A. I. Zagumennyi
{"title":"二极管激光泵浦下掺钕LaSc3(BO3)4和CdVO4晶体的比较","authors":"V. Ostroumov, T. Jensen, J. Meyn, G. Huber, V. Tsvetkov, I. Shcherbakov, A. I. Zagumennyi","doi":"10.1364/cleo_europe.1994.ctua6","DOIUrl":null,"url":null,"abstract":"Microchip lasers require a laser medium with high absorption and slope efficiency and a low threshold. From this point of view the materials of choice might be Nd: LaSc3(BO3)4 (Nd:LSB) and Nd:GdVO4 (Nd:GVO). The main features of these crystals are strong and broad absorption bands near 808 nm, a very high emission cross section at 1.06 μm for GVO, and broad emission line of LSB (Table 1). Under diode pumping 1-1.5 mm long GVO and LSB crystals demonstrate more than 850 mW of output power at 1.06 μm with a slope efficiency close to 60%.1,2 In order to achieve the same results with Nd:YAG it is necessary to use a 5-8 mm-long crystal. On the other hand both LSB and GVO suffer more from the thermal problems than YAG and require re-adjustment to compensate the thermal lens in order to maintain a good beam profile.","PeriodicalId":276336,"journal":{"name":"1994 Conference on Lasers and Electro-Optics Europe","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of neodymium-doped LaSc3(BO3)4 and CdVO4 crystals under diode laser pumping\",\"authors\":\"V. Ostroumov, T. Jensen, J. Meyn, G. Huber, V. Tsvetkov, I. Shcherbakov, A. I. Zagumennyi\",\"doi\":\"10.1364/cleo_europe.1994.ctua6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Microchip lasers require a laser medium with high absorption and slope efficiency and a low threshold. From this point of view the materials of choice might be Nd: LaSc3(BO3)4 (Nd:LSB) and Nd:GdVO4 (Nd:GVO). The main features of these crystals are strong and broad absorption bands near 808 nm, a very high emission cross section at 1.06 μm for GVO, and broad emission line of LSB (Table 1). Under diode pumping 1-1.5 mm long GVO and LSB crystals demonstrate more than 850 mW of output power at 1.06 μm with a slope efficiency close to 60%.1,2 In order to achieve the same results with Nd:YAG it is necessary to use a 5-8 mm-long crystal. On the other hand both LSB and GVO suffer more from the thermal problems than YAG and require re-adjustment to compensate the thermal lens in order to maintain a good beam profile.\",\"PeriodicalId\":276336,\"journal\":{\"name\":\"1994 Conference on Lasers and Electro-Optics Europe\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1994 Conference on Lasers and Electro-Optics Europe\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/cleo_europe.1994.ctua6\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 Conference on Lasers and Electro-Optics Europe","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/cleo_europe.1994.ctua6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of neodymium-doped LaSc3(BO3)4 and CdVO4 crystals under diode laser pumping
Microchip lasers require a laser medium with high absorption and slope efficiency and a low threshold. From this point of view the materials of choice might be Nd: LaSc3(BO3)4 (Nd:LSB) and Nd:GdVO4 (Nd:GVO). The main features of these crystals are strong and broad absorption bands near 808 nm, a very high emission cross section at 1.06 μm for GVO, and broad emission line of LSB (Table 1). Under diode pumping 1-1.5 mm long GVO and LSB crystals demonstrate more than 850 mW of output power at 1.06 μm with a slope efficiency close to 60%.1,2 In order to achieve the same results with Nd:YAG it is necessary to use a 5-8 mm-long crystal. On the other hand both LSB and GVO suffer more from the thermal problems than YAG and require re-adjustment to compensate the thermal lens in order to maintain a good beam profile.
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