2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)最新文献

Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy 金属有机气相外延在纳米尺度周期性多面硅衬底上生长GaN

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-10-27 DOI: 10.1109/ISCSPC.2003.1354425

S.C. Lee, X. Sun, S. Hersee, J. Lee, Y. Ziang, H. Xu, S. Brueck

{"title":"Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy","authors":"S.C. Lee, X. Sun, S. Hersee, J. Lee, Y. Ziang, H. Xu, S. Brueck","doi":"10.1109/ISCSPC.2003.1354425","DOIUrl":"https://doi.org/10.1109/ISCSPC.2003.1354425","url":null,"abstract":"Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy is reported. The surface of the Si(001) substrate is patterned with a one-dimensional, 355-nm period array of grooves. Each groove consisted of two facing Si{111} stripe facets separated by upper and lower Si(001) surfaces. GaN deposition on this groove array shows a strong selectivity with epitaxial growth of the hexagonal phase on the Si {111} facets being dominant. The initial stage of GaN growth appears to be amorphous. This is followed by GaN containing a high-density of stacking faults to accommodate the large lattice mismatch strain but the defect density decreases as growth proceeds. Lateral overgrowth from the Si{111} facets toward neighboring Si(001) facets leads to coalescence between GaN from opposing Si{111} facets. These GaN regions have misaligned c-axes and the crystal structure becomes unstable as they merge, resulting in a phase transition from hexagonal to cubic at the coalescence region. Experimental results of GaN grown on a nanoscale faceted Si surface including: nucleation, crystal structure, and lateral growth depending on Si orientation are presented.","PeriodicalId":275466,"journal":{"name":"2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126276352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants 等电子掺杂剂对低带隙III-V型锑化物电学和光学性能的改善

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-10-27 DOI: 10.1109/ISCSPC.2003.1354432

A. Chandola, Y. Ko, P. Dutta, A. Zakel, L. Gonzales, A. Hall, J. Henry, G. Gillen, S. Guha

引用次数: 0

Two dimensional photonic crystal active and passive devices 二维光子晶体有源和无源器件

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-10-27 DOI: 10.1109/ISCSPC.2003.1354450

P. Bhattacharya, J. Topolancik, J. Sabarinathan, S. Pradhan, Poli C. Yu

引用次数: 1

Micro-Raman scattering study of strain induced by compositional variation in single crystalline Si/sub 1-x/Ge/sub x/ discs 单晶Si/sub - 1-x/Ge/sub -x/光盘组成变化引起的应变微拉曼散射研究

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-10-27 DOI: 10.1109/ISCSPC.2003.1354435

M.R. Islam, M. Yamada

引用次数: 0

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique 原子层外延技术形成的自组装量子点的瞬态行为

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-10-27 DOI: 10.1109/ISCSPC.2003.1354430

Y. M. Park, Y.J. Park, K.M. Kim, J.C. Shin, J.D. Song, J. Lee, K. Yoo

引用次数: 0

Polarization dependent inter-subband transitions in n-type InGaAs/GaAs and p-type SiGe/Ge self assembled dots: theoretical studies n型InGaAs/GaAs和p型SiGe/Ge自组装点中偏振相关的子带间跃迁:理论研究

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-10-27 DOI: 10.1109/ISCSPC.2003.1354434

Yih-Yin Lin, J. Singh

引用次数: 0

Design of resonant tunneling permeable base transistors 谐振隧道渗透基极晶体管的设计

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-08-25 DOI: 10.1109/ISCSPC.2003.1354448

P. Lindstrom, E. Lind, L. Wernersson

引用次数: 1

Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs with a quantum hydrodynamic transport model 基于量子流体动力学输运模型的rtd和hemt单片集成电路量子效应研究

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-08-25 DOI: 10.1109/ISCSPC.2003.1354441

J. Hontschel, W. Klix, R. Stenzel

{"title":"Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs with a quantum hydrodynamic transport model","authors":"J. Hontschel, W. Klix, R. Stenzel","doi":"10.1109/ISCSPC.2003.1354441","DOIUrl":"https://doi.org/10.1109/ISCSPC.2003.1354441","url":null,"abstract":"This paper describes the first reported numerical simulations of monolithic integrated circuits of resonant tunneling structures and high electron mobility transistors based on In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP with a quantum hydrodynamic transport model (QHD-Model). For the numerical investigations the device simulator SIMBA is used, which is capable to handle complex device geometries as well as various physical models represented by certain sets of partial differential equations. As a new feature the involvement of a quantum potential is implemented to include quantum mechanical transport phenomena in different quantum size devices. The coupled solution of this quantum correction potential with a hydrodynamic transport model allows to model resonant tunneling of electrons through potential barriers and particle build up in potential wells. Different structure variations, especially the resonant tunneling diode area and the gate width of the HEMT structure show variable modulations in the output characteristics of the monolithic integrated device.","PeriodicalId":275466,"journal":{"name":"2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114704692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic anisotropy of ultrathin epitaxial Fe films on As-terminated GaAs(001)-(2/spl times/1) surfaces as端接GaAs(001)-(2/ sp1倍/1)表面超薄外延Fe薄膜的磁各向异性

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-08-25 DOI: 10.1109/ISCSPC.2003.1354438

J. Herfort, H.-P. Schonherr, P. Muduli, K. Ploog

引用次数: 1

Frequency-tunable terahertz wave generation via excitation of phonon-polaritons in GaP and beam properties 频率可调的太赫兹波的产生通过激发声子偏振子在GaP和光束性质

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-08-25 DOI: 10.1109/ISCSPC.2003.1354453

T. Tanabe, K. Suto, J. Nishizawa, K. Saito, T. Kimura

引用次数: 1