Polarization dependent inter-subband transitions in n-type InGaAs/GaAs and p-type SiGe/Ge self assembled dots: theoretical studies

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Pub Date : 2003-10-27 DOI:10.1109/ISCSPC.2003.1354434

Yih-Yin Lin, J. Singh

引用次数: 0

Abstract

This work presents the results of polarization dependence of inter-subband absorption in the n-doped InAs/GaAs quantum dots as a function of dot shapes and as a function of dot compositions in p-doped SiGe/Si dots.

查看原文本刊更多论文

n型InGaAs/GaAs和p型SiGe/Ge自组装点中偏振相关的子带间跃迁:理论研究

本文研究了n掺杂的InAs/GaAs量子点的子带间吸收与点形状和p掺杂的SiGe/Si量子点的点组成的偏振依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)

自引率

0.00%

发文量