2017 IEEE International Solid-State Circuits Conference (ISSCC)最新文献_第4页

23.9 An 8-channel 4.5Gb 180GB/s 18ns-row-latency RAM for the last level cache 23.9最后一级缓存的8通道4.5Gb 180GB/s 18ns行延迟RAM

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870432

T.-K.J. Ting, Gyh-Bin Wang, Ming-Hung Wang, Chun-Peng Wu, Chunyan Wang, C. Lo, Li-Chin Tien, D. Yuan, Yung-Ching Hsieh, Jenn-Shiang Lai, Wen-Pin Hsu, Chien-Chih Huang, Chi-Kang Chen, Yung-Fa Chou, D. Kwai, Zhe Wang, Wei Wu, S. Tomishima, Patrick Stolt, Shih-Lien Lu

{"title":"23.9 An 8-channel 4.5Gb 180GB/s 18ns-row-latency RAM for the last level cache","authors":"T.-K.J. Ting, Gyh-Bin Wang, Ming-Hung Wang, Chun-Peng Wu, Chunyan Wang, C. Lo, Li-Chin Tien, D. Yuan, Yung-Ching Hsieh, Jenn-Shiang Lai, Wen-Pin Hsu, Chien-Chih Huang, Chi-Kang Chen, Yung-Fa Chou, D. Kwai, Zhe Wang, Wei Wu, S. Tomishima, Patrick Stolt, Shih-Lien Lu","doi":"10.1109/ISSCC.2017.7870432","DOIUrl":"https://doi.org/10.1109/ISSCC.2017.7870432","url":null,"abstract":"In recent years, the demand for memory performance has grown rapidly due to the increasing number of cores on a single CPU, along with the integration of graphics processing units and other accelerators. Caching has been a very effective way to relieve bandwidth demand and to reduce average memory latency. As shown by the cache feature table in Fig. 23.9.1, there is a big latency gap between SRAM caches in the CPU and the external DRAM main memory. As a key element for future computing systems, the last level cache (LLC) should have a high random access bandwidth, a low random access latency, a density of 1 to 8Gb, and all signal pads located on one side of the chip [1]. A logic-process-based solution was proposed [2], but it is not scalable, and has a high standby current due to its need for frequent refresh. HBM2 was also proposed [3], but its row latency is not better than conventional DRAM, and its random-access bandwidth is still limited by tFAW, as shown in Fig. 23.9.1. This paper describes the high-bandwidth low-latency (HBLL) RAM design: how it overcomes these challenges and meets requirements in a cost-effective way.","PeriodicalId":269679,"journal":{"name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129886562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

27.1 A 2.8µW 80mVpp-linear-input-range 1.6GΩ-input impedance bio-signal chopper amplifier tolerant to common-mode interference up to 650mVpp 27.1 A 2.8µW 80mvpp -线性输入范围1.6GΩ-input阻抗生物信号斩波放大器，可承受高达650mVpp的共模干扰

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870454

H. Chandrakumar, D. Markovic

引用次数: 19

5.6 A 0.68nW/kHz supply-independent Relaxation Oscillator with ±0.49%/V and 96ppm/°C stability 5.6 A 0.68nW/kHz电源无关弛豫振荡器，±0.49%/V, 96ppm/°C稳定性

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870278

Anand Savanth, James Myers, A. Weddell, D. Flynn, B. Al-Hashimi

{"title":"5.6 A 0.68nW/kHz supply-independent Relaxation Oscillator with ±0.49%/V and 96ppm/°C stability","authors":"Anand Savanth, James Myers, A. Weddell, D. Flynn, B. Al-Hashimi","doi":"10.1109/ISSCC.2017.7870278","DOIUrl":"https://doi.org/10.1109/ISSCC.2017.7870278","url":null,"abstract":"RC Relaxation Oscillators (RxO) are attractive for integrated clock sources compared to LC and ring oscillators (RO), as LC oscillators pose integration challenges and RO designs have limited voltage and temperature (V-T) stability. RxOs generate a clock whose time period (TP) depends only on the timing resistor (R) and capacitor (C). Ideally, TP is independent of V-T; however, most RxOs use a reference voltage (VREF) against which the voltage of C (Vc) is compared. Generating a V-T-independent VREF is non-trivial and causes variations in RxO frequency. A common approach is the use of VDD-independent current sources or band-gap or device-Vt-based VREF [1]. The former are generally high-power options [2] while the latter is subject to process and V-T variations. A correct-by-design approach was adopted in [3] demonstrating VDD-independent operation by cancelling variations through differential sampling of VDD. Further, the power overhead of a supply-independent VREF is overcome by exploiting differential-integrator virtual ground. However, 4V2/R power in the RC tank and high-power VCO increase the energy/cycle.","PeriodicalId":269679,"journal":{"name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116370891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 31

7.3 A 40nm low-power transceiver for LTE-A Carrier Aggregation 7.3用于LTE-A载波聚合的40nm低功耗收发器

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870295

Chinq-Shiun Chiu, Shih-Chieh Yen, Chi-Yao Yu, Tzung-Han Wu, C. Chou, S. Tseng, Chih-Hsien Shen, Yu Lu, Hsinhung Chen, Song-Yu Yang, Yen-Tso Chen, G. Dehng, Yangjian Chen, C. Beghein, D. Nalbantis, M. Collados, B. Tenbroek, J. Strange, Caiyi Wang

{"title":"7.3 A 40nm low-power transceiver for LTE-A Carrier Aggregation","authors":"Chinq-Shiun Chiu, Shih-Chieh Yen, Chi-Yao Yu, Tzung-Han Wu, C. Chou, S. Tseng, Chih-Hsien Shen, Yu Lu, Hsinhung Chen, Song-Yu Yang, Yen-Tso Chen, G. Dehng, Yangjian Chen, C. Beghein, D. Nalbantis, M. Collados, B. Tenbroek, J. Strange, Caiyi Wang","doi":"10.1109/ISSCC.2017.7870295","DOIUrl":"https://doi.org/10.1109/ISSCC.2017.7870295","url":null,"abstract":"The demand of higher data-rates for mobile communication has driven the LTE standard to adopt methods to increase channel bandwidth by Carrier Aggregation (CA), this is known as LTE-Advanced (LTE-A). Due to regional spectrum allocation, these carriers can be inter-band, or intra-band with contiguous (CCA) or non-contiguous (NCCA) channels. The band combinations create a major challenge for an LTE-A transceiver (TRX) in dealing with the intermodulation (IM) of aggregated channels. These IM sources include fundamental and harmonics of LOs, VCOs, and the transmitter (TX) modulated signals. In addition, when multiple receivers (RXs) and synthesizers (SXs) are needed to support CA, power consumption becomes a key challenge. This work describes an adaptive RX that can adjust trade-offs between power consumption and RX performance, allowing significant power reduction under normal field conditions. Additionally several techniques are described for mitigation of CA IM spurs.","PeriodicalId":269679,"journal":{"name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"25 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113967850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

17.6 Rapid and energy-efficient molecular sensing using dual mm-Wave combs in 65nm CMOS: A 220-to-320GHz spectrometer with 5.2mW radiated power and 14.6-to-19.5dB noise figure 17.6基于65nm CMOS双毫米波梳的快速节能分子传感:220- 320ghz光谱仪，辐射功率5.2mW，噪声系数14.6- 19.5 db

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870381

Cheng Wang, R. Han

{"title":"17.6 Rapid and energy-efficient molecular sensing using dual mm-Wave combs in 65nm CMOS: A 220-to-320GHz spectrometer with 5.2mW radiated power and 14.6-to-19.5dB noise figure","authors":"Cheng Wang, R. Han","doi":"10.1109/ISSCC.2017.7870381","DOIUrl":"https://doi.org/10.1109/ISSCC.2017.7870381","url":null,"abstract":"Millimeter-wave/terahertz rotational spectroscopy offers ultra-wide-detection range of gas molecules for chemical and biomedical sensing. Therefore, wideband, energy-efficient, and fast-scanning CMOS spectrometers are in demand. Spectrometers using narrow-pulse sources and electromagnetic scattering [1] are broadband, but their resolutions do not meet the requirement (<10kHz) of the absolute specificity. Alternatively, a scheme using a single tunable tone exhibits significant trade-off between bandwidth and performance. The 245GHz spectrometer in [2] presents 4mW radiated power, but only has a 14GHz bandwidth. In [3] and [4], broader bandwidths are achieved at the expense of degraded radiated power (0.1mW) and noise figure (NF=18.4 to ∼23.5dB). In addition, given a typical 10kHz resolution and 1ms integration time, scanning a 100GHz bandwidth with a single tone takes as long as 3 hours. This paper reports a rapid, energy-efficient spectrometer architecture based on dual-frequency-comb scanning. A 220-to-320GHz CMOS spectrometer prototype based on this architecture is demonstrated with a total radiated power of 5.2mW and a NF of 14.6 to ∼19.5dB.","PeriodicalId":269679,"journal":{"name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126479631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 27

5.9 An 18.75µW dynamic-distributing-bias temperature sensor with 0.87°C(3σ) untrimmed inaccuracy and 0.00946mm2 area 5.9 18.75µW动态分布偏置温度传感器，误差0.87°C(3σ)，面积0.00946mm2

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870281

Y. Hsu, C. Tai, Mei-Chen Chuang, A. Roth, E. Soenen

引用次数: 9

3.3 A 14nm 1GHz FPGA with 2.5D transceiver integration 3.3集成2.5D收发器的14nm 1GHz FPGA

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870257

D. Greenhill, Ron Ho, D. Lewis, H. Schmit, Kok Hong Chan, Andy Tong, Sean Atsatt, D. How, Peter McElheny, Keith Duwel, J. Schulz, Darren Faulkner, Gopal Iyer, George Chen, Hee Kong Phoon, Han Wooi Lim, Wei-Yee Koay, Ty Garibay

引用次数: 33

1.3 The development of high-speed DNA sequencing: Jurassic Park, Neanderthal, Moore, and you 1.3高速DNA测序的发展:侏罗纪公园、尼安德特人、摩尔和你

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870243

J. Rothberg

引用次数: 0

6.3 A 40-to-56Gb/s PAM-4 receiver with 10-tap direct decision-feedback equalization in 16nm FinFET 6.3采用16nm FinFET的10分接直接决策反馈均衡的40- 56gb /s PAM-4接收机

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870287

J. Im, D. Freitas, A. Roldan, R. Casey, S. Chen, Adam Chou, T. Cronin, Kevin Geary, S. McLeod, Lei Zhou, Ian Zhuang, Jaeduk Han, Sen Lin, P. Upadhyaya, Geoff Zhang, Y. Frans, Ken Chang

引用次数: 21

22.8 An AC-input inductorless LED driver for visible-light-communication applications with 8Mb/s data-rate and 6.4% low-frequency flicker 22.8一种交流输入无电感LED驱动器，用于8Mb/s数据速率和6.4%低频闪烁的可见光通信应用

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI: 10.1109/ISSCC.2017.7870422

Yuan Gao, Lisong Li, P. Mok

{"title":"22.8 An AC-input inductorless LED driver for visible-light-communication applications with 8Mb/s data-rate and 6.4% low-frequency flicker","authors":"Yuan Gao, Lisong Li, P. Mok","doi":"10.1109/ISSCC.2017.7870422","DOIUrl":"https://doi.org/10.1109/ISSCC.2017.7870422","url":null,"abstract":"Light-emitting diodes (LEDs) are becoming the dominant lighting source over their conventional counterparts. Besides the benefits of high efficiency and long lifetime, LEDs also show great potential for high-speed data transmission because of their wide bandwidth (BW). In addition to offering general lighting, the light output can be modulated with fast-switched LEDs to achieve visible light communication (VLC). Though over 100Mb/s data-rate has been demonstrated with white LEDs in the laboratory, the high-frequency modulation is hardly supported by commonly used dimmable drivers with switching converters to regulate LED current. In these drivers, the changing slope of LED current is limited by both low loop BW and large inductors and capacitors [1]. The linear multiple-string LED drivers [2], free of inductors and big capacitors, theoretically can provide higher turn on/off speed. However, the light output of these drivers usually varies significantly at the double-line-frequency, which not only is considered as a harmful optical flicker, but also greatly affects the effectiveness of data transmission. The linear driver in [3] regulates the product of LED current and LED voltage to mitigate the optical variation, but a multiplier has to be added in the regulation loop, resulting in limited BW.","PeriodicalId":269679,"journal":{"name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115226904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9