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1991 IEEE MTT-S International Microwave Symposium Digest最新文献

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A submillimeter-wave planar diode mixer-design and evaluation 亚毫米波平面二极管混频器的设计与评价
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147260
T. Newman, K. T. Ng
{"title":"A submillimeter-wave planar diode mixer-design and evaluation","authors":"T. Newman, K. T. Ng","doi":"10.1109/MWSYM.1991.147260","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147260","url":null,"abstract":"A 345-GHz mixer using a planar GaAs Schottky diode has been designed and tested. The design process used nonlinear and linear numerical mixer analysis as well as scale-model impedance measurements. Using a planar diode eliminates the disadvantages of mechanical instability and labor-intensive assembly associated with conventional whisker-contacted diodes. Test results indicate performance on the same level as that of the best whisker-contacted room-temperature mixers for submillimeter wavelengths.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124980694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Single chip K alpha -band transceiver 单片K波段收发器
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147051
J. Berenz, M. Lacon, M. Luong
{"title":"Single chip K alpha -band transceiver","authors":"J. Berenz, M. Lacon, M. Luong","doi":"10.1109/MWSYM.1991.147051","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147051","url":null,"abstract":"The first monolithic single chip FM-CW radar transceiver operating at 40 GHz is presented. The chip is the largest multifunction MMIC (microwave monolithic integrated circuit) demonstrated operating at millimeter-wave frequencies. The design implements transmitter, receiver, and duplexer functions using a single process InGaAs HEMT (high electron mobility transistor) technology. The transmitter operates in the frequency range from 30 to 40 GHz and has greater than 12.0 dBm output power. The receiver converts the signals in the same frequency range to an intermediate frequency of 10 to 100 MHz with 0 dB conversion loss. When integrated with an antenna, the chip is a fully functional FM-CW radar which detects the Doppler frequency shift from reflected objects.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125134008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 40 GHz band monolithic even harmonic mixer with an antiparallel diode pair 一个40 GHz波段单片均匀谐波混频器与一个反平行二极管对
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147148
K. Itoh, A. Iida, Y. Sasaki, S. Urasaki
{"title":"A 40 GHz band monolithic even harmonic mixer with an antiparallel diode pair","authors":"K. Itoh, A. Iida, Y. Sasaki, S. Urasaki","doi":"10.1109/MWSYM.1991.147148","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147148","url":null,"abstract":"A monolithic even harmonic mixer with a new simplified circuit configuration is described. The mixer employs an antiparallel diode pair, and open and short circuited stubs as filters for separating RF output signal. IF (intermediate frequency) input signal and LO (local oscillator) power from each other. The circuit configuration is suitable for MMICs (monolithic microwave integrated circuits). A 40 GHz band even harmonic mixer is fabricated on a 1.7 mm*2.2 mm GaAs substrate and a conversion loss of 9.5 dB and a suppression of the virtual LO leakage of 75 dB are achieved.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123592847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 72
Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier 用于低噪声放大器的增强模伪晶倒置HEMT
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147102
K. Ohmuro, H. Fujishiro, M. Itoh, H. Nakamura, S. Nishi
{"title":"Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier","authors":"K. Ohmuro, H. Fujishiro, M. Itoh, H. Nakamura, S. Nishi","doi":"10.1109/MWSYM.1991.147102","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147102","url":null,"abstract":"The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125440112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A W-band doubler/amplifier chain using a MMIC varactor doubler and a MMIC power MESFET amplifier 使用MMIC变容倍频器和MMIC功率MESFET放大器的w波段倍频器/放大器链
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147161
G. Hegazi, E. Chang, J. Singer, F. Phelleps, P. Mcnally, K. Pandde, P. Rice, P. Pages
{"title":"A W-band doubler/amplifier chain using a MMIC varactor doubler and a MMIC power MESFET amplifier","authors":"G. Hegazi, E. Chang, J. Singer, F. Phelleps, P. Mcnally, K. Pandde, P. Rice, P. Pages","doi":"10.1109/MWSYM.1991.147161","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147161","url":null,"abstract":"A monolithic microwave integrated circuit (MMIC) W-band varactor doubler that delivers 30 mW of output power at 93 GHz with 12% conversion efficiency has been developed U-band MMIC MESFET power amplifier chips that exhibit 0.23 W of output power with 13 dB from 45.5 to 46.5 GHz were also developed. A doubler/amplifier chain has been integrated to deliver 30 mW of output power at 93 GHz with an overall gain of 7 dB.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126847645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The differential reference frequency synthesizer 差分参考频率合成器
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147224
Z. Galani, M. Bianchini, J. Chiesa
{"title":"The differential reference frequency synthesizer","authors":"Z. Galani, M. Bianchini, J. Chiesa","doi":"10.1109/MWSYM.1991.147224","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147224","url":null,"abstract":"Indirect digital frequency synthesizers cannot achieve fast frequency switching with closely spaced frequencies because of limitations imposed by the requisite narrow loop bandwidth. A novel dual-loop digital frequency synthesizer is presented which satisfies these conflicting requirements and, in most cases, exhibits improved phase noise performance. Two realizations of the novel frequency synthesizer are presented and compared to a conventional dual-loop digital synthesizer using an example. From this example, it is evident that the use of the differential reference frequency synthesizer allows synthesis of closely spaced frequencies with phase-locked loops that use arbitrarily high reference frequencies and, therefore, can have considerably wider bandwidths and commensurately shorter frequency switching times than can be achieved with conventional dual-loop synthesizers.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116527405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of 20 GHz-band on-board power amplifiers 20ghz波段车载功率放大器的研制
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147263
H. Makishima, N. Mita
{"title":"Development of 20 GHz-band on-board power amplifiers","authors":"H. Makishima, N. Mita","doi":"10.1109/MWSYM.1991.147263","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147263","url":null,"abstract":"A high-efficiency and lightweight solid-state power amplifier (SSPA) and traveling-wave-tube amplifier (TWTA) for use in a 20-GHz-band satellite transponder have been developed. The SSPA features a compact, highly efficient output power combiner. The output power of the SSPA is 3.3 W with an efficiency of 21% at 18.365 GHz, and it weighs 750 g. The TWTA features a high-efficiency, compact size three-stage collector and high switching frequency power supply. The TWTA delivers an output power of 12 W with 31% efficiency at 20.465 GHz and weighs 1430 g.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"571 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116533502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1.57 W/mm GaAs-based MISFET for high-power and microwave-switching applications 1.57 W/mm gaas基MISFET用于大功率和微波开关应用
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147085
F. Smith, C. Chen, L. Mahoney, M. Manfra, D. Temme, B. Clifton, A. Calawa
{"title":"A 1.57 W/mm GaAs-based MISFET for high-power and microwave-switching applications","authors":"F. Smith, C. Chen, L. Mahoney, M. Manfra, D. Temme, B. Clifton, A. Calawa","doi":"10.1109/MWSYM.1991.147085","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147085","url":null,"abstract":"Reports the power and switching performance of a GaAs metal-insulator-semiconductor field-effect transistor (MISFET) made using low-temperature (LT) GaAs as the buffer layer and the gate insulator. An LT GaAs MISFET with a gate length L/sub g/ of 1.5 mu m delivered an output power density P/sub d/ of 1.57 W/mm with 4.4 dB gain and a power-added efficiency eta /sub PA/ of 27.3% at 1.1 GHz. This is the highest power density from a GaAs-based FET ever reported. The P/sub d/ and eta /sub PA/ of this device at 1.1 GHz are shown as a function of input power. More recently, the LT GaAs MISFET has also demonstrated switch performance at 1.3 GHz that is comparable to that of the best commercially available FET switches that the authors have tested.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116550744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Narrow bandstop filters 窄带阻滤波器
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147057
H. C. Bell
{"title":"Narrow bandstop filters","authors":"H. C. Bell","doi":"10.1109/MWSYM.1991.147057","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147057","url":null,"abstract":"The synthesis of narrow bandstop filters with arbitrary stopband and equiripple passband responses is demonstrated. A new transformed frequency variable is used for iterative approximation with automatic bandwidth adjustment and prototype circuit realization. A five-resonator filter is used to illustrate the proposed method.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122799291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Ku-band super low-noise pseudomorphic heterojunction field-effect transistors (HJFET) with high producibility and high reliability 高产量、高可靠性的ku波段超低噪声伪晶异质结场效应晶体管(HJFET)
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147101
T. Tokue, Y. Nashimoto, T. Hirokawa, A. Mese, S. Ichikawa, H. Negishi, T. Toda, T. Kimura, M. Fujita, I. Nagasako, T. Itoh
{"title":"Ku-band super low-noise pseudomorphic heterojunction field-effect transistors (HJFET) with high producibility and high reliability","authors":"T. Tokue, Y. Nashimoto, T. Hirokawa, A. Mese, S. Ichikawa, H. Negishi, T. Toda, T. Kimura, M. Fujita, I. Nagasako, T. Itoh","doi":"10.1109/MWSYM.1991.147101","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147101","url":null,"abstract":"The authors report newly developed Ku-band super-low-noise pseudomorphic heterojunction FETs (HJFETs) with high producibility and high reliability, utilizing a novel electron beam lithography technique. The developed HJFETs with 0.25 mu m long and 200 mu m wide gate FETs showed an average noise figure of 0.6 dB with 11.3 dB average associated gain at 12 GHz and exhibited highly reliable operation with a mean time to failure of 3*10/sup 9/ hours at 100 degrees C.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114586729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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