Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier

Abstract

The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.<>