用于低噪声放大器的增强模伪晶倒置HEMT

1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI:10.1109/MWSYM.1991.147102

K. Ohmuro, H. Fujishiro, M. Itoh, H. Nakamura, S. Nishi

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引用次数: 12

摘要

报道了伪晶倒转高电子迁移率晶体管(P-I-HEMTs)的噪声特性。在增强模式下制备p - i - hemt。与伪晶HEMT相比，P-I-HEMT表现出更低的噪声系数，特别是在小漏极电压和小漏极电流下。结果表明，P-I-HEMT结构适用于精细栅极低噪声场效应管。

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Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier

The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.<>

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1991 IEEE MTT-S International Microwave Symposium Digest

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