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2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)最新文献

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Design Challenges of Realizing An Active Radar Seeker at Ka-Band 实现ka波段有源雷达导引头的设计挑战
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449673
Y. Verma
{"title":"Design Challenges of Realizing An Active Radar Seeker at Ka-Band","authors":"Y. Verma","doi":"10.1109/IMARC.2017.8449673","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449673","url":null,"abstract":"Active Radar Seekers are missile borne radars with a definite task of homing guidance of the mother interceptor missile towards the incoming ballistic missile. An Active Radar Seeker developed at Ka-Band is presented in this paper. This paper presents in brief details about the requirements of seeker, Challenges in realizing various subsystems, Integrated System Testing and Results. An attempt has also been made to model the crucial Seeker subsystems and the integrated model results are presented. The results of the model and the Integrated Seeker are in very close agreement, proving the validity of the mathematical model.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133714578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A Canonical Predistorted Filter Based on TM Mode Dielectric Resonator 一种基于TM模式介质谐振器的正则预失真滤波器
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449720
Nishant Shukla, Vikas Gupta, Tushar Gajjar, K. Pathan
{"title":"A Canonical Predistorted Filter Based on TM Mode Dielectric Resonator","authors":"Nishant Shukla, Vikas Gupta, Tushar Gajjar, K. Pathan","doi":"10.1109/IMARC.2017.8449720","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449720","url":null,"abstract":"The paper presents a 10-pole (10-4-4) canonical cross-coupled, pre-distorted filter realized using TM mode dielectric resonators. The filter offers significant size reduction compared to corresponding TE mode dielectric resonator based filter. The filter is capable of generating comparable electrical performance but at the cost of moderately-compromised Q. The canonical pre-distorted filtering function has been utilized to achieve the better electrical performance and TM mode dielectric resonator allows minimizing the size of the filter. The realized filter at S-Band yields a reduction of around 40% in size and footprint compared to a cylindrical DR based high Q filter for a similar requirement.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116421694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband Frequency Doubler/Multiplier 宽带倍频器/倍频器
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449705
S. Pegwal, M. Abegaonkar, S. Koul
{"title":"Broadband Frequency Doubler/Multiplier","authors":"S. Pegwal, M. Abegaonkar, S. Koul","doi":"10.1109/IMARC.2017.8449705","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449705","url":null,"abstract":"This paper discusses the design and performance of a low cost broadband frequency doubler/multiplier realized in microwave integrated circuit (MIC) technology. The doubler/multiplier make use of four beam lead schottky diodes in bridge configuration for doubling along with a broadband balun as an feeding network. The complete design is realized on Rogers RO4003 8mil substrate. Measured result shows a conversion loss of 6.2dB to 17.8dB with fundamental suppression of more than 20dB for an input frequency of 3.6 – 18.5GHz.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124950581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hysteresis with non-linear and memory effect on nonuniform transmission line 非均匀传输线中具有非线性和记忆效应的磁滞
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8636645
L. Kumar, V. Pandey, H. Parthasarathy, V. Shrimali
{"title":"Hysteresis with non-linear and memory effect on nonuniform transmission line","authors":"L. Kumar, V. Pandey, H. Parthasarathy, V. Shrimali","doi":"10.1109/IMARC.2017.8636645","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8636645","url":null,"abstract":"The effect of hysteresis induced non-linear and memory effects on transmission line behavior using perturbation theory for non-linear differential equation is analyzed. Generation of higher harmonics is observed. The B-H Hysteresis curve is explained using Landau's theory of magnetic moment precession.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120941867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Approach for Modelling Oscillator Circuit with Antennas 一种新的天线振荡器电路建模方法
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449704
Srinaga Nikhiln, K. Wu
{"title":"A Novel Approach for Modelling Oscillator Circuit with Antennas","authors":"Srinaga Nikhiln, K. Wu","doi":"10.1109/IMARC.2017.8449704","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449704","url":null,"abstract":"This paper presents an approach to unify oscillator circuit and antenna for future mm wave systems. Here, the passive circuitry present on both sides of transistor in an oscillator circuit are replaced by antennas. The prototype consists of two antennas arranged in a linear array with transistor placed in the spacing between them. General modelling procedure is reported followed by proof of concept demonstration at frequency of 5 GHz. Frequency tuning up to 70 MHz is also achieved around 5 GHz from measurements and maximum radiation is observed at beam steered angle of −20° with respect to broadside, from simulation. Transmission line model of the same is developed to reduce the time for initial analysis and optimization, and presented here","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129466554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
3D/multilayer heterogeneous integration and packaging for next generation applications in millimeter-wave and beyond 用于下一代毫米波及以上应用的3D/多层异构集成和封装
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8611009
K. Samanta
{"title":"3D/multilayer heterogeneous integration and packaging for next generation applications in millimeter-wave and beyond","authors":"K. Samanta","doi":"10.1109/IMARC.2017.8611009","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8611009","url":null,"abstract":"This paper presents the recent important developments in multilayer/3D multichip module and heterogeneous integration technologies, utilizing the advantages of a variety of semiconductor and advanced integration and packaging technologies, towards making the next-generation mmW and sub-mmW/THz wireless applications feasible and affordable. This includes advanced multilayer ceramic-based thick-film based technique which has realized high-performance and compact passive components to complete modules, achieving the highest performance in MCMs, using a cost-effective mounting and integration technique, yet covering frequencies from 1 to 200 GHz. Moreover, presents the recent advancements in 3D wafer-level heterogeneous integration technology (to 300 GHz), which combines compound-semiconductor (InP/GaN) with Si/CMOS for challenging mmW/sub-mmW applications.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126016219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis and Design of Frequency Reconfigurable Stepped Impedance Resonator Band Pass Filter 频率可重构阶跃阻抗谐振器带通滤波器的分析与设计
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449700
Debapriya Sen, D. Packiaraj
{"title":"Analysis and Design of Frequency Reconfigurable Stepped Impedance Resonator Band Pass Filter","authors":"Debapriya Sen, D. Packiaraj","doi":"10.1109/IMARC.2017.8449700","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449700","url":null,"abstract":"Analysis and design of a frequency reconfigurable stepped impedance resonator (SIR) band pass filter is reported in this paper. Basic band pass filter is constructed in microstrip medium using three section interdigital stepped impedance resonators. Stepped impedance resonator plays the role for suppressing second and third harmonics and also reduces the size of the filter. Frequency reconfigurabilty of the filter is achieved by varying the electrical lengths of SIRs with help of voltage controlled varactor diodes. An equivalent circuit model of the proposed reconfigurable SIR filter is reported in this paper. Overall response of the proposed filter is computed in MATLAB using input impedance of the filter. The computed results are well matching with full wave simulation results. The electronically frequency reconfigurable filter is experimentally made and the measurements are reported. The filter is designed for a bandwidth of 300MHz and reconfigurable frequency range of 1.25GHz to 1.95GHz. The insertion loss of the reconfigurable filter over entire tuning range is less than 5.0dB and the return loss is better than 10dB. The filter is compact and measures a size of 32mmx30mmx 0.8mm. The reconfigurable filter can be intuitively used in multiband communication systems replacing traditional switched filter banks.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129990041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Four-Way Substrate Integrated Coaxial Line (SICL) Power Divider for K Band Applications 用于K波段应用的四路基板集成同轴线(SICL)功率分配器的设计
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449663
S. Mukherjee
{"title":"Design of Four-Way Substrate Integrated Coaxial Line (SICL) Power Divider for K Band Applications","authors":"S. Mukherjee","doi":"10.1109/IMARC.2017.8449663","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449663","url":null,"abstract":"In this paper, design of Substrate Integrated Coaxial Line (SICL) based four way power divider is presented. A detailed study of different configurations of power divider based on SICL technology is explored. To realize impedance matching at the three port junctions, SICL based quarter wave impedance transformer is used in both Tee and Y type power divider. Both the designs exhibit equal power division with output power within the range of -3 0.05dB. The phase difference between the output ports of the two way power divider is below 0.5°. A design of SICL 90° bend is also studied. To compensate the reactive loading effect at the bend, chamfering at the central conductor is implemented which helps to improve the S parameter performance of the design. Finally, the Tee and Y power divider is cascaded along with SICL bend to realize SICL four way equal power divider. The proposed design operates over entire K band (18–26 GHz) with its reflection coefficient below −16 dB. The output power of the design is within -6 0.55 dB and the phase difference between the output ports are below 0.9°. The proposed design is compact in size and exhibits broad bandwidth making it suitable for practical applications.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130013999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A novel technique based on modified genetic algorithm for the synthesis of thinned planar antenna array with low peak side lobe level over desired scan volume 一种基于改进遗传算法的低峰值旁瓣薄平面天线阵列合成新技术
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8611242
J. M., K. K. Suman, V. S. Gangwar, A.K. Singh, S.P. Singh
{"title":"A novel technique based on modified genetic algorithm for the synthesis of thinned planar antenna array with low peak side lobe level over desired scan volume","authors":"J. M., K. K. Suman, V. S. Gangwar, A.K. Singh, S.P. Singh","doi":"10.1109/IMARC.2017.8611242","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8611242","url":null,"abstract":"In this paper, a novel algorithm is devised to reduce the peak side lobe level (PSLL) of the thinned planar antenna (TPA) array at antenna boresight as well as over the desired scan volume without occurrence of grating lobes when the beam is electronically scanned away from the boresight. Randomized symmetrical thinning is incorporated in the proposed algorithm to find the best combination of 'ON' and 'OFF' elements. Modified binary coded genetic algorithm (MBC-GA) is employed in the present study to solve this optimization problem. A 12×12-element TPA array is numerically examined to access the performance of proposed method. Results obtained through this study show that array under consideration renders maximum possible reduction in PSLL and also demonstrate the absence of grating lobes when the beam is scanned to 20 deg. and 40 deg. away from the boresight.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130689843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Ultra Wideband Receiver Protection Limiter Using 0.13m pHEMT Technology 采用0.13m pHEMT技术的超宽带接收机保护限幅器
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449717
S. Chaturvedi, S. L. Badnikar, A. A. Naik
{"title":"Ultra Wideband Receiver Protection Limiter Using 0.13m pHEMT Technology","authors":"S. Chaturvedi, S. L. Badnikar, A. A. Naik","doi":"10.1109/IMARC.2017.8449717","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449717","url":null,"abstract":"This paper describes design and development of an ultra-wideband receiver protection limiter realized using 0.13um pHEMT technology. The limiter achieves very low insertion loss of > 1dB, wide band match S11/S22 > 10dB) and high power handling of 33dBm (2W) over a very high bandwidth of 0.5 to 18GHz. The flat leakage power of the designed limiter is 20dBm. The chip is realized in a very compact size of 1.6×0.71mm.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132006254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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