{"title":"3D/multilayer heterogeneous integration and packaging for next generation applications in millimeter-wave and beyond","authors":"K. Samanta","doi":"10.1109/IMARC.2017.8611009","DOIUrl":null,"url":null,"abstract":"This paper presents the recent important developments in multilayer/3D multichip module and heterogeneous integration technologies, utilizing the advantages of a variety of semiconductor and advanced integration and packaging technologies, towards making the next-generation mmW and sub-mmW/THz wireless applications feasible and affordable. This includes advanced multilayer ceramic-based thick-film based technique which has realized high-performance and compact passive components to complete modules, achieving the highest performance in MCMs, using a cost-effective mounting and integration technique, yet covering frequencies from 1 to 200 GHz. Moreover, presents the recent advancements in 3D wafer-level heterogeneous integration technology (to 300 GHz), which combines compound-semiconductor (InP/GaN) with Si/CMOS for challenging mmW/sub-mmW applications.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2017.8611009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents the recent important developments in multilayer/3D multichip module and heterogeneous integration technologies, utilizing the advantages of a variety of semiconductor and advanced integration and packaging technologies, towards making the next-generation mmW and sub-mmW/THz wireless applications feasible and affordable. This includes advanced multilayer ceramic-based thick-film based technique which has realized high-performance and compact passive components to complete modules, achieving the highest performance in MCMs, using a cost-effective mounting and integration technique, yet covering frequencies from 1 to 200 GHz. Moreover, presents the recent advancements in 3D wafer-level heterogeneous integration technology (to 300 GHz), which combines compound-semiconductor (InP/GaN) with Si/CMOS for challenging mmW/sub-mmW applications.