3D/multilayer heterogeneous integration and packaging for next generation applications in millimeter-wave and beyond

K. Samanta
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引用次数: 3

Abstract

This paper presents the recent important developments in multilayer/3D multichip module and heterogeneous integration technologies, utilizing the advantages of a variety of semiconductor and advanced integration and packaging technologies, towards making the next-generation mmW and sub-mmW/THz wireless applications feasible and affordable. This includes advanced multilayer ceramic-based thick-film based technique which has realized high-performance and compact passive components to complete modules, achieving the highest performance in MCMs, using a cost-effective mounting and integration technique, yet covering frequencies from 1 to 200 GHz. Moreover, presents the recent advancements in 3D wafer-level heterogeneous integration technology (to 300 GHz), which combines compound-semiconductor (InP/GaN) with Si/CMOS for challenging mmW/sub-mmW applications.
用于下一代毫米波及以上应用的3D/多层异构集成和封装
本文介绍了多层/3D多芯片模块和异构集成技术的最新重要发展,利用各种半导体和先进集成和封装技术的优势,使下一代毫米波和亚毫米波/太赫兹无线应用变得可行和负担得起。这包括先进的多层陶瓷厚膜技术,该技术已经实现了高性能和紧凑的无源组件来完成模块,在mcm中实现了最高的性能,使用具有成本效益的安装和集成技术,覆盖频率从1到200 GHz。此外,介绍了3D晶圆级异构集成技术(至300 GHz)的最新进展,该技术将化合物半导体(InP/GaN)与Si/CMOS相结合,以实现具有挑战性的毫米波/亚毫米波应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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