{"title":"采用0.13m pHEMT技术的超宽带接收机保护限幅器","authors":"S. Chaturvedi, S. L. Badnikar, A. A. Naik","doi":"10.1109/IMARC.2017.8449717","DOIUrl":null,"url":null,"abstract":"This paper describes design and development of an ultra-wideband receiver protection limiter realized using 0.13um pHEMT technology. The limiter achieves very low insertion loss of > 1dB, wide band match S11/S22 > 10dB) and high power handling of 33dBm (2W) over a very high bandwidth of 0.5 to 18GHz. The flat leakage power of the designed limiter is 20dBm. The chip is realized in a very compact size of 1.6×0.71mm.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Ultra Wideband Receiver Protection Limiter Using 0.13m pHEMT Technology\",\"authors\":\"S. Chaturvedi, S. L. Badnikar, A. A. Naik\",\"doi\":\"10.1109/IMARC.2017.8449717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes design and development of an ultra-wideband receiver protection limiter realized using 0.13um pHEMT technology. The limiter achieves very low insertion loss of > 1dB, wide band match S11/S22 > 10dB) and high power handling of 33dBm (2W) over a very high bandwidth of 0.5 to 18GHz. The flat leakage power of the designed limiter is 20dBm. The chip is realized in a very compact size of 1.6×0.71mm.\",\"PeriodicalId\":259227,\"journal\":{\"name\":\"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2017.8449717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2017.8449717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra Wideband Receiver Protection Limiter Using 0.13m pHEMT Technology
This paper describes design and development of an ultra-wideband receiver protection limiter realized using 0.13um pHEMT technology. The limiter achieves very low insertion loss of > 1dB, wide band match S11/S22 > 10dB) and high power handling of 33dBm (2W) over a very high bandwidth of 0.5 to 18GHz. The flat leakage power of the designed limiter is 20dBm. The chip is realized in a very compact size of 1.6×0.71mm.