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Graphene based Nano-Rectifiers 石墨烯基纳米整流器
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449694
A. Song, G. Auton, Ashutosh Kumar Singh, Jiawei Zhang, Xijian Zhang, E. Hill
{"title":"Graphene based Nano-Rectifiers","authors":"A. Song, G. Auton, Ashutosh Kumar Singh, Jiawei Zhang, Xijian Zhang, E. Hill","doi":"10.1109/IMARC.2017.8449694","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449694","url":null,"abstract":"Most efforts on graphene electronic devices have been made on graphene transistors. This is a very challenging task and often requires generating a suitable bandgap in order to achieve a reasonable on/off ratio while preserving the carrier mobility. In contrast to transistors, the functionality of some types of diodes does not necessarily require a large bandgap. In particular, a nano-rectifier known as the ballistic rectifier benefits of long carrier mean-free path in graphene without being sensitive to bandgap. In this invited paper, we review our recent work on ballistic rectifier structures by creating an asymmetric cross-junction in a single-layer graphene flake. A mobility up to 200,000 cm2/Vs is achieved, ensuring a mean-free-path well beyond that required for the device to operate in the ballistic regime. This enables a very high intrinsic responsivity at room temperature. Taking advantage of the four-terminal device architecture in which the output channels are orthogonal to the input channels, we show that the device noise is hardly influenced by the input and is mainly limited by thermal noise, and this enables an exceptional noise-equivalent power in the order of pW/Hz1/2.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133848289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and development of mode launcher for TM01 mode in circular waveguide in S-band s波段圆波导中TM01模式发射器的设计与开发
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8636665
S. Patel, R. Jaiswal, Raj Singh, A. P
{"title":"Design and development of mode launcher for TM01 mode in circular waveguide in S-band","authors":"S. Patel, R. Jaiswal, Raj Singh, A. P","doi":"10.1109/IMARC.2017.8636665","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8636665","url":null,"abstract":"This paper presents coaxial TEM-to-TM01 mode converter in circular waveguide in S-Band. Many of the High power microwave sources generate power in the form of TM01 mode at 3GHz. The proposed mode launcher is used for calibration purpose at low power. Coaxial line is attached to the axis of circular waveguide to excite TM01 mode and to increase the conversion efficiency stair type of monopole antenna is connected to the inner conductor of coaxial line. Furthermore the dielectric of coaxial line is extended in to the waveguide over inner conductor to achieve maximum possible return loss i.e. 72dB simulated and 50dB measured; since there is a requirement of minimum reflection. Proposed design offered 40% of bandwidth. Radiation pattern of TM01 mode is then investigated to verify propagated mode. The test results are in good agreement with the simulation.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114236964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Integrated Non-Magnetic Non-Reciprocal Components Based on Switch-Based Conductivity Modulation 基于开关电导率调制的集成非磁性非互反元件
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449674
H. Krishnaswamy, A. Nagulu, Negar Reiskarimian, T. Dinc
{"title":"Integrated Non-Magnetic Non-Reciprocal Components Based on Switch-Based Conductivity Modulation","authors":"H. Krishnaswamy, A. Nagulu, Negar Reiskarimian, T. Dinc","doi":"10.1109/IMARC.2017.8449674","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449674","url":null,"abstract":"A passive, linear, and time-invariant medium with symmetric permittivity and permeability tensors is reciprocal and has identical transmission properties in forward and reverse directions. However, non-reciprocal components such as isolators and circulators have a wide range of applications at radio frequencies, in wireless communications and radar systems to name a few. Traditionally, non-reciprocal components have been implemented using ferrite materials biased by a permanent magnet, but there has been exciting recent resarch on non-reciprocity induced by periodic time modulation in RF circuits. In this paper, we review our recent research on non-magnetic CMOS-compatible non-reciprocal RF components using switch-based conductivity modulation. We demonstrate that by modulating the conductivity around a delay medium, non-magnetic, low-loss, compact and broadband non-reciprocity can be achieved. We present measured results from CMOS circulators at 750 MHz and 28 GHz to validate our results. We also briefly describe the co-design opportunities that arise once the circulator is integrated on the same CMOS chip as the rest of the transceiver.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114627303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
300-GHz-band CMOS transceiver 300ghz波段CMOS收发器
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8611247
M. Fujishima
{"title":"300-GHz-band CMOS transceiver","authors":"M. Fujishima","doi":"10.1109/IMARC.2017.8611247","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8611247","url":null,"abstract":"300-GHz-band transceiver chipsets with 40-nm CMOS process has been realized. A 300-GHz-band transmitter generates a modulated signal with 105 Gbps at the maximum, and the receiver demodulates a modulated signal of a maximum of 32 Gbps. The most difficult point in designing a 300-GHz-band transceiver with CMOS process is that the maximum operating frequency (f max) of transistors does not reach 300 GHz. Key technologies for designing a transceiver circuit exceeding the maximum operating frequency of transistors and the measurement results will be described.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"42 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123600029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurate Prediction, Validation of Ambient Microwave Breakdown Threshold in High Power Very Narrowband Microwave Filters and Novel Design Techniques to Establish Sufficient Margins 高功率甚窄带微波滤波器中环境微波击穿阈值的准确预测和验证，以及建立足够余量的新设计技术
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449698
P. Ambati, Vikrant Singh, Shilpi Soni, V. Parekh
{"title":"Accurate Prediction, Validation of Ambient Microwave Breakdown Threshold in High Power Very Narrowband Microwave Filters and Novel Design Techniques to Establish Sufficient Margins","authors":"P. Ambati, Vikrant Singh, Shilpi Soni, V. Parekh","doi":"10.1109/IMARC.2017.8449698","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449698","url":null,"abstract":"This paper describes the method to accurately predict air breakdown threshold in high power microwave filters using theoretical analysis carried out in 3D FEM electromagnetic field solver. The effects of various factors like atmospheric pressure, relative humidity, output VSWR on the air breakdown threshold are also evaluated. Predicted air breakdown threshold is experimentally verified. Details of High power tests required to demonstrate air breakdown are included in the paper. The impacts of air breakdown on RF parameters of the filter during and after breakdown have been discussed and visual signatures of breakdown on filter surface have been included in the paper. Novel methods to improve air breakdown margin without compromising on other performance parameters, have been discussed. Moreover, necessary precautions required for carrying out high power test in ambient environment on such very narrow band filters have also been detailed.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122135153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
K-Band High Stablity and Resolution Frequency Synthesizers Using Forced Opto-Electronic Oscillators 使用强制光电振荡器的k波段高稳定性和高分辨率频率合成器
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449688
T. Sun, A. Daryoush, A. Poddar, Li Zhang, U. Rohde
{"title":"K-Band High Stablity and Resolution Frequency Synthesizers Using Forced Opto-Electronic Oscillators","authors":"T. Sun, A. Daryoush, A. Poddar, Li Zhang, U. Rohde","doi":"10.1109/IMARC.2017.8449688","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449688","url":null,"abstract":"Forced opto-electronics oscillator (OEO) is a very promising way to build low phase noise oscillators. Forced techniques of self-injection locking phase locking (SILDPLL) are integrated with narrowband tunable RF filters to build OEO system to further reduce the phase noise and suppress side mode generated among standard OEOs because of long fiber delays. The narrowband tunable RF filter is based on an optical wavelength tuned transversal filter using a fiber Bragg grating as delay element cascaded with current tuned YIG filter to accomplish a 2kHz frequency resolution over K-band. Second harmonic generated frequency synthesized signals with close-in to carrier phase noise of −127 dBc/Hz at 10 kHz offset are reported by Vπ operation of a Mach-Zehnder (MZM) over 18 GHz to 22 GHz. 19” rack mount system is also constructed and long-term stability of 4.5 kHz over 60 min is measured at K-band, while a 3.5 kHz drift is measured for a tabletop realization.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127637502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of Nanostructured Graphene Based RF Complementary Split Ring Resonator Gas Sensor for Detection of Nitrogen Dioxide 二氧化氮检测用纳米结构石墨烯射频互补劈裂环谐振腔气体传感器的设计
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449715
S. Singh, P. Azad, M. Akhtar, K. Kar
{"title":"Design of Nanostructured Graphene Based RF Complementary Split Ring Resonator Gas Sensor for Detection of Nitrogen Dioxide","authors":"S. Singh, P. Azad, M. Akhtar, K. Kar","doi":"10.1109/IMARC.2017.8449715","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449715","url":null,"abstract":"The complementary split ring resonator (CSRR) incorporated with the nanostructured graphene is proposed to design an efficient RF gas sensor. The nanostructured graphene is synthesized using the nitrogen rich cow urine, which can also be termed as the nitrogen doped graphene (NGn). The CSRR is etched on back side of the microstrip line designed on a FR4 substrate, and is excited by the electric field from top of the line. In this study, the nitrogen dioxide (NO2) gas is detected by tracking the shift in the resonant frequency of the measured transmission coefficient (S21) of the designed sensor when it is exposed to the gaseous environment. The gas sensing capability of designed NGn-CSRR sensor is tested at room temperature using 50–200 ppm of NO2. A shift in the resonant frequency of 51 MHz is observed even for as low as 50 ppm of NO2 molecules interacting with NGn surface of the designed sensor. The detection of very low traces of NO2 by the proposed NGn-CSRR RF sensor shows its application for NO2 sensing in harsh environment.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121345866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Graphene Based Multiband Frequency Reconfigurable Antenna 基于石墨烯的多波段频率可重构天线
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449706
J. Kumar, B. Basu, F. Talukdar, A. Nandi
{"title":"Graphene Based Multiband Frequency Reconfigurable Antenna","authors":"J. Kumar, B. Basu, F. Talukdar, A. Nandi","doi":"10.1109/IMARC.2017.8449706","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449706","url":null,"abstract":"This communication proffers a graphene based microstrip reconfigurable antenna capable of switching between two frequency bands (S-band 3.03 GHz and C-band 5.17 GHz and 6.13 GHz). A graphene nanoparticle based conductive ink is printed on the cotton showing surface resistance of 2.7 Sq. −1, conductivity of 0.37× 10<sup>5</sup> Sm<sup>−1</sup>. An excellent radiation efficiency of above 55% is achieved at the dominant mode (TM<inf>10</inf>, 3.03 GHz. The frequency reconfigurability is introduced by exciting the higher order modes, TM<inf>02</inf> and TM<inf>20</inf> through two different feeding locations and an external RF Switch.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126433503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
X-Band Self Biased MMIC Amplifier Using 250nm GaAs pHEMT Process 采用250nm GaAs pHEMT工艺的x波段自偏置MMIC放大器
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8449727
Tuhin Paul, Mynam Harinath, S. Garg
{"title":"X-Band Self Biased MMIC Amplifier Using 250nm GaAs pHEMT Process","authors":"Tuhin Paul, Mynam Harinath, S. Garg","doi":"10.1109/IMARC.2017.8449727","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8449727","url":null,"abstract":"This paper illustrates the design, simulation and test results of a two-stage self-biased GaAs HEMT MMIC amplifier circuit at X Band. The circuit requires only one external supply for functioning. The matching networks has been miniaturized to contain the chip size at 3.5mm X 2mm. Test results show an achieved gain of 20 dB with 26 dBm saturated power over 600 MHz bandwidth at 9.6 GHz.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132633965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A miniaturized two pole metamaterial bandpass filter using Ω-shaped IDC for cellular application 一种微型的两极超材料带通滤波器，使用Ω-shaped IDC用于蜂窝应用
2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI: 10.1109/IMARC.2017.8636648
D. Choudhary, R. Chaudhary
{"title":"A miniaturized two pole metamaterial bandpass filter using Ω-shaped IDC for cellular application","authors":"D. Choudhary, R. Chaudhary","doi":"10.1109/IMARC.2017.8636648","DOIUrl":"https://doi.org/10.1109/IMARC.2017.8636648","url":null,"abstract":"A miniaturized two pole metamaterial (MTM) bandpass filter has been presented in this paper. The designed filter is realized with two ohm shaped interdigital capacitor (IDC) to provide series capacitance and via for shunt inductance. The ohm shaped IDC gives better impedance matching in comparison with conventional series gap capacitance. The zeroth order resonance (ZOR) frequency depend on series parameter due to short ended structure. The designed filter offers minimum 0.5dB insertion loss and return loss more than 16.5 dB in passband. Two pole exists at 2.23 GHz and 2.35 GHz due to two ohm shape IDC, which is characterized by its electric field plot. The metamaterial properties of designed filter is verified by dispersion diagram. The proposed filter is modelled by using ANSYS 14.0 and simulated results are experimentally verified. Also comparison is shown by this filter with earlier published similar filters. It is suitable for LTE 2300 and Bluetooth application.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134255500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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