X-Band Self Biased MMIC Amplifier Using 250nm GaAs pHEMT Process

Abstract

This paper illustrates the design, simulation and test results of a two-stage self-biased GaAs HEMT MMIC amplifier circuit at X Band. The circuit requires only one external supply for functioning. The matching networks has been miniaturized to contain the chip size at 3.5mm X 2mm. Test results show an achieved gain of 20 dB with 26 dBm saturated power over 600 MHz bandwidth at 9.6 GHz.