采用250nm GaAs pHEMT工艺的x波段自偏置MMIC放大器

2017 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2017-12-01 DOI:10.1109/IMARC.2017.8449727

Tuhin Paul, Mynam Harinath, S. Garg

{"title":"采用250nm GaAs pHEMT工艺的x波段自偏置MMIC放大器","authors":"Tuhin Paul, Mynam Harinath, S. Garg","doi":"10.1109/IMARC.2017.8449727","DOIUrl":null,"url":null,"abstract":"This paper illustrates the design, simulation and test results of a two-stage self-biased GaAs HEMT MMIC amplifier circuit at X Band. The circuit requires only one external supply for functioning. The matching networks has been miniaturized to contain the chip size at 3.5mm X 2mm. Test results show an achieved gain of 20 dB with 26 dBm saturated power over 600 MHz bandwidth at 9.6 GHz.","PeriodicalId":259227,"journal":{"name":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"X-Band Self Biased MMIC Amplifier Using 250nm GaAs pHEMT Process\",\"authors\":\"Tuhin Paul, Mynam Harinath, S. Garg\",\"doi\":\"10.1109/IMARC.2017.8449727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper illustrates the design, simulation and test results of a two-stage self-biased GaAs HEMT MMIC amplifier circuit at X Band. The circuit requires only one external supply for functioning. The matching networks has been miniaturized to contain the chip size at 3.5mm X 2mm. Test results show an achieved gain of 20 dB with 26 dBm saturated power over 600 MHz bandwidth at 9.6 GHz.\",\"PeriodicalId\":259227,\"journal\":{\"name\":\"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2017.8449727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2017.8449727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了一种X波段两级自偏置GaAs HEMT MMIC放大电路的设计、仿真和测试结果。这个电路只需要一个外部电源就能工作。匹配网络已经小型化，芯片尺寸为3.5mm X 2mm。测试结果表明，在9.6 GHz下，在600 MHz带宽下实现了20 dB的增益和26 dBm的饱和功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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X-Band Self Biased MMIC Amplifier Using 250nm GaAs pHEMT Process

This paper illustrates the design, simulation and test results of a two-stage self-biased GaAs HEMT MMIC amplifier circuit at X Band. The circuit requires only one external supply for functioning. The matching networks has been miniaturized to contain the chip size at 3.5mm X 2mm. Test results show an achieved gain of 20 dB with 26 dBm saturated power over 600 MHz bandwidth at 9.6 GHz.

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2017 IEEE MTT-S International Microwave and RF Conference (IMaRC)

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