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2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM)最新文献

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A Synchronous Rectifier Energy Collection Circuit with Two Energy-Transfer Schemes for A 65% Power Efficiency 具有两种能量转换方案的同步整流能量收集电路，功率效率为65%
2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2019-10-01 DOI: 10.1109/ICICM48536.2019.8977188
Weikuan Li, S. Huang, Q. Duan
{"title":"A Synchronous Rectifier Energy Collection Circuit with Two Energy-Transfer Schemes for A 65% Power Efficiency","authors":"Weikuan Li, S. Huang, Q. Duan","doi":"10.1109/ICICM48536.2019.8977188","DOIUrl":"https://doi.org/10.1109/ICICM48536.2019.8977188","url":null,"abstract":"This study presents an efficient and self-startup energy harvesting circuit consisting of two energy-transfer schemes. One energy-transfer scheme is based on a transformer, and the other energy-transfer scheme is based on a boost converter. At the same time, a new and improved rectification architecture is adopted. The MOS transistor is used to replace the diode, which greatly reduces the rectification loss, so that the circuit can achieve higher efficiency. The final output is stabilized by a negative feedback circuit, and the output voltage is stabilized at 2V. The design is implemented by the use of 0.4 um BCD process. With the minimum input voltage is 50 mV, maximum efficiency of 65% can be achieved.","PeriodicalId":257536,"journal":{"name":"2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131369967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detection of Transformer Winding Fault with Oscillation Wave Signal Based on Time-Frequency Transform 基于时频变换的振荡波信号检测变压器绕组故障
2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2019-10-01 DOI: 10.1109/ICICM48536.2019.8977150
Hongwen Liu, Ke Wang, Xiangyu Zhou
{"title":"Detection of Transformer Winding Fault with Oscillation Wave Signal Based on Time-Frequency Transform","authors":"Hongwen Liu, Ke Wang, Xiangyu Zhou","doi":"10.1109/ICICM48536.2019.8977150","DOIUrl":"https://doi.org/10.1109/ICICM48536.2019.8977150","url":null,"abstract":"In order to further improve the reliability of the transformer winding state detection, a method for analyzing winding state is proposed by using winding oscillation wave. The oscillation wave is obtained from the transient excitation generated by switching’s action under high voltage direct current (HVDC). Based on the field test, the oscillatory wave signal is de-noised by continuous wavelet transform and then its time-frequency characteristics are analyzed. The image recognition method and the matrix similarity degree are introduced to quantify the time-frequency signal characteristic. The results show that the method has high testing efficiency, and the matrix similarity can not only reflect the repeatability and regularity of oscillation waves in different amplitude and from different output side, but also better reflect the difference of transformer phase-to-phase windings. This method provides a reference for the research of transformer winding deformation detection.","PeriodicalId":257536,"journal":{"name":"2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122481832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ICICM 2019 Preface
2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2019-10-01 DOI: 10.1109/icicm48536.2019.8977186
{"title":"ICICM 2019 Preface","authors":"","doi":"10.1109/icicm48536.2019.8977186","DOIUrl":"https://doi.org/10.1109/icicm48536.2019.8977186","url":null,"abstract":"","PeriodicalId":257536,"journal":{"name":"2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130422356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Single-Port Five-Transistor SRAM Cell Design for Signal Processing Systems 用于信号处理系统的新型单端口五晶体管SRAM单元设计
2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2019-10-01 DOI: 10.1109/ICICM48536.2019.8977159
Chien-Cheng Yu, Chung-Bin Wu, Ming-Chuen Shiau
{"title":"A New Single-Port Five-Transistor SRAM Cell Design for Signal Processing Systems","authors":"Chien-Cheng Yu, Chung-Bin Wu, Ming-Chuen Shiau","doi":"10.1109/ICICM48536.2019.8977159","DOIUrl":"https://doi.org/10.1109/ICICM48536.2019.8977159","url":null,"abstract":"Static random access memory (SRAM) has been widely used as the typical memory for logic LSIs due to its fast operations and a little power consumed at standby mode. In this paper, a new single-port five-transistor (5T) SRAM cell integrated with assist circuitries is proposed. This design is to provide an efficient solution to the writing ‘1’ issue to improve write operations and to introduce a two-phase reading methodology to speed up reading speed and thereby avoiding unwanted power dissipation. Also, by using the standby startup circuit design, the SRAM cell can reduce leakage current in standby mode. Simulations are conducted to show the effectiveness and superiority of the proposed method.","PeriodicalId":257536,"journal":{"name":"2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121872801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Divide-by-2 Transformer-Based Injection-Locked Frequency Dividers with Two Active Cores 基于2分频变压器的注入锁定分频器
2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2019-06-27 DOI: 10.1109/ICICM48536.2019.8977158
S. Jang, J. Hou, W. Lai, M. Juang
{"title":"Divide-by-2 Transformer-Based Injection-Locked Frequency Dividers with Two Active Cores","authors":"S. Jang, J. Hou, W. Lai, M. Juang","doi":"10.1109/ICICM48536.2019.8977158","DOIUrl":"https://doi.org/10.1109/ICICM48536.2019.8977158","url":null,"abstract":"This letter presents a high-performance wide-band divide-by-2 injection-locked frequency divider (ILFD) in the 0.18 $mu$m CMOS process. The ILFD uses transformer-coupled resonator with two resonant frequencies based on the lumped inductor model, and it consists of two sub-ILFDs coupled by inductive coupling. The sub-ILFD can be switched on/off to aid the circuit analysis, thus the ILFD can operate in three modes. At low input power, the two sub-ILFDs act as an independent ILFDs with a high-band locking range and a low-band locking range. At high input power, the ILFD has two non-overlapped locking ranges indicating that the dual-resonance resonator plays the role and will lead to a wide overlapped locking range. At the power consumption of 1.83 mW and at the input power of 0 dBm, the low-band locking range is 3.3 GHz from 2.3 to 5.6 GHz. The optimal bias condition at low power yields wide locking range and high Figure of merit. Measurement data shows the designed ILFD has employed the property of a dual-resonance resonator.","PeriodicalId":257536,"journal":{"name":"2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131968638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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