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2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)最新文献

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Low-loss filters in rectangular waveguide with rigorous control of spurious responses through a smart modal filter 矩形波导中的低损耗滤波器，通过智能模态滤波器严格控制杂散响应
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967213
F. Alessandri, M. Comparini, F. Vitulli
{"title":"Low-loss filters in rectangular waveguide with rigorous control of spurious responses through a smart modal filter","authors":"F. Alessandri, M. Comparini, F. Vitulli","doi":"10.1109/MWSYM.2001.967213","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967213","url":null,"abstract":"Low-loss performance is one of the main drivers in the design of microwave input filters and diplexer, used on satellite communication transponders. In addition, a careful control of spurious responses is also required in order to guarantee an adequate protection from high-level input interfering signals, which may degrade the performance of the receiver. Both these requirements can be accomplished by a simple and cost-effective design approach, based on rectangular waveguide resonator. Fast and accurate simulation and measured response of a specific design are also compared, demonstrating that the proposed solution is practical and reliable.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115547863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Time domain characterization of multichip module elements 多芯片模块元件的时域特性
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967068
W. Dressel, T. Mangold, L. Vietzorreck, P. Russer
{"title":"Time domain characterization of multichip module elements","authors":"W. Dressel, T. Mangold, L. Vietzorreck, P. Russer","doi":"10.1109/MWSYM.2001.967068","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967068","url":null,"abstract":"The development of multichip modules (MCM) or multichip packages (MCP) is an important step towards the miniaturization of integrated circuits. In this technique two or more chips without housing are mounted on a single substrate and connected by each other, resulting in very small and compact elements. An important role for the quality of this modular concept is the performance of the connecting structures and external devices like DC-blocks or line crossings between the ICs. In this contribution various elements are analysed by the TLM method. A deembedding technique for the S-parameter calculation is presented and windowing functions for the time-domain signals are investigated in order to decrease the computation time. Results are demonstrated for the S-parameters of interdigital capacitors and a balun transformer and compared to measurements.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122442076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New type of millimeter wave antenna by using the high permittivity LSE NRD guide 采用高介电常数LSE NRD波导的新型毫米波天线
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967108
F. Kuroki, M. Yamaguchi, Y. Minamitani, T. Yoneyama
{"title":"New type of millimeter wave antenna by using the high permittivity LSE NRD guide","authors":"F. Kuroki, M. Yamaguchi, Y. Minamitani, T. Yoneyama","doi":"10.1109/MWSYM.2001.967108","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967108","url":null,"abstract":"A technique for construction of a millimeter-wave antenna has been developed based on high permittivity LSE-NRD guide technology. The novelty of the present technique lies in the use of a simple radiator, which consists of tapered dielectric strip with the length of about a guided wavelength and a broad radiation pattern. A new type of fan beam antenna for marine radar use has been fabricated by locating the radiator in the focal point of the cylindrical parabolic reflector. A good fan beam pattern with half-power beam widths of 4 in the horizontal plane and 38 in the vertical plane can be obtained.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122880125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Digital generation of RF signals for wireless communications with band-pass delta-sigma modulation 带通δ - σ调制无线通信射频信号的数字生成
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967334
J. Keyzer, J. Hinrichs, Andre G. Metzger, Masaya Iwamoto, I. Galton, Peter M. Asbeck
{"title":"Digital generation of RF signals for wireless communications with band-pass delta-sigma modulation","authors":"J. Keyzer, J. Hinrichs, Andre G. Metzger, Masaya Iwamoto, I. Galton, Peter M. Asbeck","doi":"10.1109/MWSYM.2001.967334","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967334","url":null,"abstract":"This paper demonstrates a high speed digital technique to produce binary (digital) signals that encode representative RF signals (with time varying envelope) as needed for wireless communications. Specifically, it shows that IS-95 format CDMA signals can be generated with a single bit digital data stream at 3.6 Gb/S. The technique uses band-pass delta-sigma modulation so that the quantization noise is shaped out of the frequency band of interest. This approach points the way to single-chip, DSP-based transmitters, used in conjunction with switching mode power amplifiers and simple analog filters, to implement all the functions of a wireless transmitter.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122970699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 103
Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si Si上3d - mmic中嵌入聚酰亚胺层微带线的耦合
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967238
G. Ponchak, E. Tentzeris, John Papapolymerou
{"title":"Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si","authors":"G. Ponchak, E. Tentzeris, John Papapolymerou","doi":"10.1109/MWSYM.2001.967238","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967238","url":null,"abstract":"Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si-SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114164684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A power PHEMT device technology for broadband wireless access 一种用于宽带无线接入的电力PHEMT设备技术
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.966975
M. Miller, B. Peatman, R. Hooper
{"title":"A power PHEMT device technology for broadband wireless access","authors":"M. Miller, B. Peatman, R. Hooper","doi":"10.1109/MWSYM.2001.966975","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.966975","url":null,"abstract":"An unmatched power InGaAs PHEMT transistor in a ceramic package has been developed for broadband wireless access (BWA) applications. Operating at 3.5 GHz, from 12 V supplies, a typical device delivers more than 40 dBm of peak envelope power at -30 dBc IMD with drain efficiencies as high as 58% in class AB mode. Under the stringent W-CDMA spec of -40 dBc adjacent channel power (with 11.2 dB peak-to-average signal ratio), a small signal gain of 9.5 dB and linear power in excess of 31.5 dBm with 36% efficiency is obtained in class AB mode. Our paper presents the device technology, and the DC and RF performance under W-CDMA and two-tone excitation.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"291 1-2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116860789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Microstrip miniaturized loop-filters with high out-of-band rejection for future 3G mobile terminals 用于未来3G移动终端的微带小型化高带外抑制环路滤波器
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967207
Y. Toutain, J. Coupez, C. Person
{"title":"Microstrip miniaturized loop-filters with high out-of-band rejection for future 3G mobile terminals","authors":"Y. Toutain, J. Coupez, C. Person","doi":"10.1109/MWSYM.2001.967207","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967207","url":null,"abstract":"This paper deals about the implementation of miniaturized microstrip band-pass filters operating on a very narrow bandwidth. We propose an original synthesis for achieving high out-of-band rejection by means of a 2/sup nd/ order resonant structure, for which transmission zeros are introduced through mutual coupling effects. Quite good performances are obtained regarding losses, size and spurious resonances for the proposed topology, which can be considered as a good solution for future mobile on-board equipments.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129810398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A novel adaptivity for EM time domain methods: scale adaptive time steps (SATS) 一种新的EM时域自适应方法:尺度自适应时间步长(SATS)
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967003
A. Rennings, V. Toni, P. Waldow, Y. Qian, T. Itoh, I. Wolff
{"title":"A novel adaptivity for EM time domain methods: scale adaptive time steps (SATS)","authors":"A. Rennings, V. Toni, P. Waldow, Y. Qian, T. Itoh, I. Wolff","doi":"10.1109/MWSYM.2001.967003","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967003","url":null,"abstract":"We describe a space and time adaptive modified FDTD method based on wavelet transforms. The multiresolution structure of wavelet bases provides a simple way to adapt computational refinements to the local regularity of the electromagnetic field. Additionally a novel algorithm is presented that modifies the time discretization at each resolution.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129247911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Full wave analysis of FET fingers using various semiconductor physical models 利用各种半导体物理模型对FET指形进行全波分析
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.966919
S. Goasguen, M. M. Tomeh, S. El-Ghazaly
{"title":"Full wave analysis of FET fingers using various semiconductor physical models","authors":"S. Goasguen, M. M. Tomeh, S. El-Ghazaly","doi":"10.1109/MWSYM.2001.966919","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.966919","url":null,"abstract":"We present a full wave simulation of FET fingers based on a global modeling approach. The electromagnetic fields inside the device are computed by a standard FDTD scheme and coupled to the semiconductor equations through the current density. Four different semiconductor models are used to characterize the active device. They are derived from the hydrodynamic model obtained by integration of Boltzmann's equations. The I-V characteristics of the FET are obtained for the different models. The RF voltage gain and the S parameters can be compared. This is the first time that such an analysis is performed. The wave device interactions occurring in the FET can be modeled using various physical models. This allows us to determine which semiconductor model to use for a given gate length and a given frequency range when the electromagnetic interactions are simulated.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129249498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A silicon-on-insulator 28-V RF power LDMOSFET for 1-GHz integrated power amplifier applications 用于1 ghz集成功率放大器应用的绝缘体上硅28v射频功率LDMOSFET
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI: 10.1109/MWSYM.2001.967336
E. McShane, K. Shenai, S. K. Leong
{"title":"A silicon-on-insulator 28-V RF power LDMOSFET for 1-GHz integrated power amplifier applications","authors":"E. McShane, K. Shenai, S. K. Leong","doi":"10.1109/MWSYM.2001.967336","DOIUrl":"https://doi.org/10.1109/MWSYM.2001.967336","url":null,"abstract":"This paper presents the first results of a 1-GHz SOI RF power LDMOSFET with 115 mW of output power. A 6-W P/sub OUT/ (competitive with comparable bulk LDMOSTs) can be achieved by scaling the FET dimensions with little degradation of RF performance. Both DC and RF characteristics are presented, and model parameters are extracted. Class A amplifier results are shown to deliver a PAE of 25%, power gain of 16 dB, and 1-dB compression of 40 mW. These results are extremely encouraging for IPA development with SOI RF power LDMOSFETs.","PeriodicalId":250660,"journal":{"name":"2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124558204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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