Applied Surface Science最新文献_第10页

Comparative study on the stability of the lead perovskite halides when irradiated with X-ray or electron beam under specific environment

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-11 DOI: 10.1016/j.apsusc.2024.162087

Dong-Jin Yun, Ane Etxebarria, Kyung-Jae Lee, Sang-Jun Lee, Hyunja Maeng, Sung Heo, Ethan J. Crumlin

{"title":"Comparative study on the stability of the lead perovskite halides when irradiated with X-ray or electron beam under specific environment","authors":"Dong-Jin Yun, Ane Etxebarria, Kyung-Jae Lee, Sang-Jun Lee, Hyunja Maeng, Sung Heo, Ethan J. Crumlin","doi":"10.1016/j.apsusc.2024.162087","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162087","url":null,"abstract":"Lead halide perovskites (MAPbX3, X = Cl, Br, I) have garnered significant attention for their potential in high-performance photovoltaics and light-emitting diodes, but their stability under analytical conditions remains a concern. In this study, we systematically investigate the denaturation processes of MAPbX3 employing different analytical methods, including X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, reflection electron energy loss spectroscopy, and ambient pressure XPS. The samples were exposed to X-ray and electron beam irradiation in ultra-high vacuum (UHV) and reactive gas environments (O2 and H2O). The denaturation process, characterized by the growth of Pb⁰ and Pb-Ox species, is most pronounced in MAPbCl3, followed by MAPbBr3, and least in MAPbI3. Furthermore, MAPbX3 samples exhibited distinct behaviors under exposure to different environments: MAPbCl3 and MAPbBr3 shows notable Pb-Ox formation in an O2 atmosphere, while MAPbI3 displays minimal oxidation. A comparative X-ray diffraction analysis revealed that low crystallinity was associated with high denaturation, even among MAPbX3 samples with identical compositions. Collectively, these findings emphasize the importance of considering both halogen composition and physical properties, such as crystallinity and morphology, when assessing the stability and reliability of lead halide perovskite materials for optoelectronic applications.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"8 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142809430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Residue-free layered material interfaces for device processing

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.161961

Subrata Paul, Bikash Das, Arunava Kar, Shuvankar Das, Smruti Ranjan Mohanty, Kenji Watanabe, Takashi Taniguchi, Subhadeep Datta, Krishnakumar S.R. Menon

{"title":"Residue-free layered material interfaces for device processing","authors":"Subrata Paul, Bikash Das, Arunava Kar, Shuvankar Das, Smruti Ranjan Mohanty, Kenji Watanabe, Takashi Taniguchi, Subhadeep Datta, Krishnakumar S.R. Menon","doi":"10.1016/j.apsusc.2024.161961","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.161961","url":null,"abstract":"The emergence of two-dimensional (2D) materials has catalysed the development of designer-stacked heterostructures and advanced devices. However, the transfer process of these layers generally involves polymer support, leaving traces of organic residues that can affect the reliability of devices based on them. This surface contamination by polymer residues has been a long-standing critical problem in device processing and fabrication that has not been fully resolved so far despite attempts by various groups. In this study, we employ low-energy electron microscopy (LEEM) as a novel approach to identify nano-sized traces of polymer residues present on the transferred hexagonal boron nitride (hBN) flakes and explore effective elimination strategies. Our results demonstrate the sensitivity of LEEM to detect minute residue traces that are not feasible with the conventional methods. We show the polymer residues on the substrate form fractal-like structures, leading to local work-function variations. Further, we propose a high-temperature annealing approach to achieve clean interfaces validated by LEEM and Raman spectroscopy.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"20 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142796905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Facile one-step synthesis of hybrid electrode based on graphitic carbon decorated by copper/copper oxide nanoparticles via laser-induced plasma processing for non-enzymatic glucose sensor

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162080

Tianyang Yan, Minghui Hong

{"title":"Facile one-step synthesis of hybrid electrode based on graphitic carbon decorated by copper/copper oxide nanoparticles via laser-induced plasma processing for non-enzymatic glucose sensor","authors":"Tianyang Yan, Minghui Hong","doi":"10.1016/j.apsusc.2024.162080","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162080","url":null,"abstract":"Developing a non-enzymatic glucose sensor with an adequate active surface and superior interfering resistance is essential for continuous glucose monitoring. The presented novel sensor is a facile one-step fabricated by laser-induced metal plasma forward transfer combined with plasma-driven polyimide (PI) film carbonization. Serving as the catalyst, copper (Cu)/copper oxide (CuO) nanoparticles (NPs) generated by laser-induced plasma are anchored onto the graphitic carbon (GC) conductive support. The influences of laser fluence, forward transfer distance, and Cu target thickness on the morphology and composition of the working electrode are revealed, and the electrochemical performance of the sensor is optimized. The optimized sensor demonstrates a detection limit of 7.03 nM in an alkaline solution. When glucose is supplied, the sensor responds rapidly (∼0.20s). Additionally, the sensor exhibits remarkable glucose sensing selectivity, reproducibility, and stability. The Cu/CuO NPs-GC sensor is an appealing option for future flexible non-enzymatic glucose diagnostic devices because of its ease of manufacture and performance dependability.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"28 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation and modulation of charge transport properties with thin films of an isoindigo-based donor-acceptor molecular semiconductor

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162057

Xiao Liu, Virginie Placide, Liang Chu, Kevin Mall Haidaraly, Lydia Sosa Vargas, Chihaya Adachi, Jeon Wong Wu, Benoit Heinrich, Emmanuelle Lacaze, Wensheng Yan, Anthony D’Aléo, Fabrice Mathevet

{"title":"Investigation and modulation of charge transport properties with thin films of an isoindigo-based donor-acceptor molecular semiconductor","authors":"Xiao Liu, Virginie Placide, Liang Chu, Kevin Mall Haidaraly, Lydia Sosa Vargas, Chihaya Adachi, Jeon Wong Wu, Benoit Heinrich, Emmanuelle Lacaze, Wensheng Yan, Anthony D’Aléo, Fabrice Mathevet","doi":"10.1016/j.apsusc.2024.162057","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162057","url":null,"abstract":"Charge mobility plays a crucial role in determining the performance of organic semiconducting devices. Organic semiconductors (OSCs) based on donor–acceptor (D-A) small molecules generally have planar backbones that facilitate charge transport. However, their hole transport property in thin film transistors (TFTs) still required to be further improved, and simultaneously achieving electron transport alongside hole transport remains a great challenge due to the presence of electron traps on the substrate surface. In this study, an isoindigo-based oligothiophene that is a D-A small molecule, was synthesized and employed as an active layer in TFTs. The impact of thermal annealing on the structure, morphology and charge transport properties of its thin films was investigated. By implementing a facile surface engineering, electron traps on the SiO2 dielectric surface were effectively eliminated. As a result, the charge transport behavior in the TFTs was successfully transformed from solely p-type to ambipolar characteristics. This accomplishment holds great significance for the advancement of optoelectronic devices in which both p-type and n-type conduction are harnessed.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"8 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of hollow structured MnCeOx@PrCeOx catalyst for low temperature NH3-SCR with enhanced SO2 resistance

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162067

Fumei Wang, Qi Cai, Jiaqi Gao, Xinhua He, Yaqin Ji, Boxiong Shen

{"title":"Synthesis of hollow structured MnCeOx@PrCeOx catalyst for low temperature NH3-SCR with enhanced SO2 resistance","authors":"Fumei Wang, Qi Cai, Jiaqi Gao, Xinhua He, Yaqin Ji, Boxiong Shen","doi":"10.1016/j.apsusc.2024.162067","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162067","url":null,"abstract":"To further enhance the catalytic efficiency and sulfur resistance of the catalyst at low temperatures, particularly at or below 150 ℃, MnCeOx@PrCeOx catalyst with hollow-structure was synthesized. The catalyst demonstrated remarkable NH3-SCR activity, surpassing 90 % NO conversion and 100 % N2 selectivity at 90 − 270 °C, and exhibited superior SO2 and H2O resistance at ultra-low temperature of 120 °C in the presence of 200 ppm SO2 and 8 vol% H2O for more than 16 h. The findings suggest that the MnCeOx@PrCeOx catalyst possesses a large specific surface area and well-dispersed active sites, coupled with strong interactions between Ce, Mn, and Pr. In-situ DRIFTs analysis revealed that the hollow structure enhanced gas adsorption and activation, leading to an increased formation of nitrate and adsorbed ammonia species on the MnCeOx@PrCeOx surface compared to nanosphere structure MnCeOx catalyst. Furthermore, the augmented number of Lewis acidic sites in the MnCeOx@PrCeOx catalyst contributed significantly to its improved acidity, inhibiting SO2 adsorption, preserving active sites, and preventing sulfate deposition. This work provides valuable insights for the development of SO2-resistant SCR catalysts at ultra-low temperatures, specifically addressing the synthesis and interaction of multi-metal oxides.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"21 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Construction of CeO2/δ-MnO2 heterojunction for photothermal catalysis of toluene

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162009

Yan Cheng, Chenhao Liu, Can Yi

{"title":"Construction of CeO2/δ-MnO2 heterojunction for photothermal catalysis of toluene","authors":"Yan Cheng, Chenhao Liu, Can Yi","doi":"10.1016/j.apsusc.2024.162009","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162009","url":null,"abstract":"Energy-efficient catalysis technology is highly desired for the emission reduction of volatile organic compounds (VOCs). Photothermal catalytic oxidation hold promise for the intention. Herein, we reported a photothermal catalyst <math><mrow is=\"true\"><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"normal\">CeO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub><mo is=\"true\">/</mo><mi is=\"true\">δ</mi><mtext is=\"true\">-</mtext><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"normal\">MnO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></mrow></math> with heterojunction for catalytic oxidizing toluene with high efficiency through hydrothermal method. A 90% conversion rate for 200 ppm toluene over the catalyst could be achieved at 118 °C under the gas hourly space velocity of 36,000 <math><mi is=\"true\" mathvariant=\"normal\">mL</mi></math>/ (g h) with the irradiation of 350 <math><msup is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"normal\">mW/cm</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msup></math> visible light. The excellent performance can be largely related with the construction of heterojunctions between <math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"normal\">CeO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math> and <math><mrow is=\"true\"><mi is=\"true\">δ</mi><mtext is=\"true\">-</mtext><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"normal\">MnO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></mrow></math>. This study may provide an energy-efficient way for catalytic degradation of VOCs and insight into rational design for photothermal catalysts.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"47 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142796893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring substrate and Structure-Induced ultrafast phonon dynamics in Bi2Te3 thin films

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162069

Saurabh K. Saini, Kapil Kumar, Prince Sharma, Shivam Tiwari, Rajiv Kr. Singh, Sumeet Walia, Mahesh Kumar

{"title":"Exploring substrate and Structure-Induced ultrafast phonon dynamics in Bi2Te3 thin films","authors":"Saurabh K. Saini, Kapil Kumar, Prince Sharma, Shivam Tiwari, Rajiv Kr. Singh, Sumeet Walia, Mahesh Kumar","doi":"10.1016/j.apsusc.2024.162069","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162069","url":null,"abstract":"The investigation of phonon and charge carrier dynamics in Bi2Te3 overlayers requires consideration of key factors such as substrate orientation, annealing-induced modifications, and lattice mismatch, emphasizing the need for employing a range of substrates. In this study, Bi2Te3 thin films were grown on Silicon (Si) and Silicon nitride (SiN) substrates under room temperature and annealed conditions. Despite identical growth conditions, significant differences in film morphology were observed due to substrate orientation and lattice mismatch. Morphology due to annealing processes affected the vibration modes of Bi2Te3 and coherent acoustic phonon oscillations in the NIR range. Annealing altered phonon frequencies, leading to oscillation disappearance, attributed to breaking quintuple layers and reforming crystallographic planes, reducing crystallite size. For the as-grown samples, the crystallite size is 19.8 nm for Si and 38.9 nm for SiN, with a respective phonon frequency of 30.8 GHz and 31.3 GHz. After annealing, the morphology changed, reducing the crystallite size to 2.34 nm for Si and 0.54 nm for SiN, respectively. The reduction of crystallite size highly influenced the phonon frequency of Bi2Te3, which has implications for various optoelectronics applications, including tunable frequency generators and GHz-range radar applications.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"10 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal selenization of electrochemically obtained cobalt thin-films and nanowire arrays

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162070

Mikołaj Kozak, Ana Araujo, Mateusz M. Marzec, Renata Palowska, Jonathan Ruiz Esquius, Łukasz Pięta, Krystian Sokołowski, Grzegorz Sulka, Lifeng Liu, Agnieszka Brzózka

{"title":"Thermal selenization of electrochemically obtained cobalt thin-films and nanowire arrays","authors":"Mikołaj Kozak, Ana Araujo, Mateusz M. Marzec, Renata Palowska, Jonathan Ruiz Esquius, Łukasz Pięta, Krystian Sokołowski, Grzegorz Sulka, Lifeng Liu, Agnieszka Brzózka","doi":"10.1016/j.apsusc.2024.162070","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162070","url":null,"abstract":"In this research, we have developed a two-step electrochemical-thermal method for synthesizing cobalt selenides. Our approach enables the direct formation of cobalt selenide structures on conductive materials without the need for binders or adhesive layers. Firstly, cobalt thin films were electrodeposited from an aqueous solution, followed by selenization using selenium vapors in the second step. The selenization temperature was optimized for a constant duration of 2 h. Crystalline cobalt diselenide (CoSe2) thin films were successfully obtained at 400 and 500 °C, while annealing at 600 °C produced cobalt selenide (CoSe) thin film; however, the selenization was not successful at 300 °C. The obtained materials were characterized by SEM, EDS, XRD, XPS, and Raman spectroscopy. The thin cobalt diselenide film synthesized at 400 °C was evaluated as an electrocatalyst for the hydrogen evolution reaction in acidic media. Furthermore, the described synthesis approach was adapted to produce cobalt selenide nanowires. Despite the successful selenization of nanowires, this technique requires further improvement to enhance the homogeneity of selenium distribution and stabilize the golden current collector.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"19 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced UV Shielding for Cork: A comparative study of ZnO and TiO2 films through colorimetric and FTIR techniques

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162038

B. Tiss, D. Martínez-Martínez, C. Mansilla, L. Cunha

{"title":"Advanced UV Shielding for Cork: A comparative study of ZnO and TiO2 films through colorimetric and FTIR techniques","authors":"B. Tiss, D. Martínez-Martínez, C. Mansilla, L. Cunha","doi":"10.1016/j.apsusc.2024.162038","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162038","url":null,"abstract":"This study evaluates the potential of ZnO and TiO2 films produced by magnetron sputtering to protect cork from the ageing effects induced by the solar radiation, particularly its UV component. This approach was validated first by exposure of cork under coated glass, and then extended to coated cork. The variation of color coordinates (L*, a*, b*) after exposure to a sun simulator lamp demonstrated that ZnO films provide superior protection compared to TiO2 films. The TiO2 coatings revealed to be not enough protective, exhibiting color variations (ΔC ≈ 9) even higher than the uncoated cork (ΔC ≈ 6). ZnO films showed a lower degree of color change and less UV-induced damage. (3.6 ≤ ΔC ≤ 5.0). Thus, ZnO films can effectively reduce the impact of UV radiation on cork, offering a more reliable protective solution. This study includes also the analysis of Fourrier Transform Infrared Spectra (FTIR) of the samples before and after exposure test. The exposure of the unprotected samples to the radiation causes a large reduction the of intensity of the FTIR bands, a phenomenon which is greatly reduced when cork protected by ZnO films. A correlation between color variation and intensity of FTIR spectra was established.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"54 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the deposition mechanism of Cu seed layer atoms on the Ta (001) surface from the atomic perspective

IF 6.7 2区材料科学

Applied Surface Science Pub Date : 2024-12-10 DOI: 10.1016/j.apsusc.2024.162037

Bo Zhao, Rui Li, Yuhua Huang, Yang Xi, Zhiqaing Tian, Shizhao Wang, Sheng liu

{"title":"Investigation of the deposition mechanism of Cu seed layer atoms on the Ta (001) surface from the atomic perspective","authors":"Bo Zhao, Rui Li, Yuhua Huang, Yang Xi, Zhiqaing Tian, Shizhao Wang, Sheng liu","doi":"10.1016/j.apsusc.2024.162037","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.162037","url":null,"abstract":"Ta barrier layers are commonly used in microelectronic devices to prevent direct Cu-Si contact. To better understand the deposition mechanism of Cu seed layers on Ta barriers, which is crucial for improving film quality, we conducted molecular dynamics simulations to analyze this process at the atomic level. The investigation focused on analyzing the effects of deposition temperature and incident energy on film surface roughness, interface mixing and dislocation defects, systematically elucidated the underlying mechanisms. Simulation results indicate that only a minor amount of interface mixing occurs when the deposition energy approaches 40 eV, confirming the effectiveness as a barrier material. At lower deposition energies, increasing the energy significantly reduces the surface roughness of the Cu seed layer, but beyond 5 eV, it stabilizes around 0.9 Å. Dislocation density continuously decreases substantially with increasing energy. The deposition temperature is positively correlated with the surface roughness, while dislocation defects fluctuate with temperature, peaking near 400 K and reaching minimal values near 600 K. With further increases in temperature, the dislocation density begins to rise slowly. Consequently, this work conducted a comprehensive analysis of the deposition mechanism, which has significant implications for practical deposition processes of Cu seed layers in semiconductor devices, offering novel insights for the microscopic analysis of deposition parameters applicable to thin film deposition in other contexts.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"25 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0