{"title":"Rational design of high-performance dual-channel-layered InAlZnO thin-film transistors for low power and transparent electronics","authors":"Genglong Zhao, Ablat Abliz","doi":"10.1016/j.apsusc.2025.164113","DOIUrl":null,"url":null,"abstract":"In this study, InAlZnO (IAZO) based oxide films and related thin-film transistors (TFTs) were prepared using RF magnetron sputtering. The effects of different Al contents on the oxygen vacancy defects, optical properties, and performance of single- and dual-channel-layered IAZO TFTs were investigated. The experimental results showed that optimized dual-channel-layered IAZO(1:0.1:1)/ IAZO(1:0.3:1) TFTs obtained a high carrier field-effect mobility (<em>μ</em><sub>FE</sub>) of 42.3 cm<sup>2</sup>/Vs, a subthreshold swing (<em>SS</em>) of 131 mV dec<sup>-1</sup> and an I<sub>on</sub>/I<sub>off</sub> of 1.6 × 10<sup>7</sup>. Meanwhile, the light illumination stress stability of the dual-channel-layered IAZO TFTs was significantly enhanced. This was because the 0.1 % Al content IAZO film was utilized as the front layer of the TFT to provide high carrier concentration (<em>N</em><sub>e</sub>) and increase mobility, whereas the 0.3 % Al content IAZO film was used as the back layer of the TFT to control the channel conductance and trap density. X-ray photoelectron spectroscopy and electron paramagnetic resonance analysis revealed that the number of oxygen vacancies decreased with increasing Al content. Finally, a fully transparent dual-channel layered IAZO TFT was prepared with an ITO-glass substrate, and a high optical transparency of 90 %, small V<sub>TH</sub> of 0.04 V, and high <em>μ</em><sub>FE</sub> of 39.7 cm<sup>2</sup>/Vs were achieved for applications in the field of transparent displays.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"25 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.apsusc.2025.164113","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, InAlZnO (IAZO) based oxide films and related thin-film transistors (TFTs) were prepared using RF magnetron sputtering. The effects of different Al contents on the oxygen vacancy defects, optical properties, and performance of single- and dual-channel-layered IAZO TFTs were investigated. The experimental results showed that optimized dual-channel-layered IAZO(1:0.1:1)/ IAZO(1:0.3:1) TFTs obtained a high carrier field-effect mobility (μFE) of 42.3 cm2/Vs, a subthreshold swing (SS) of 131 mV dec-1 and an Ion/Ioff of 1.6 × 107. Meanwhile, the light illumination stress stability of the dual-channel-layered IAZO TFTs was significantly enhanced. This was because the 0.1 % Al content IAZO film was utilized as the front layer of the TFT to provide high carrier concentration (Ne) and increase mobility, whereas the 0.3 % Al content IAZO film was used as the back layer of the TFT to control the channel conductance and trap density. X-ray photoelectron spectroscopy and electron paramagnetic resonance analysis revealed that the number of oxygen vacancies decreased with increasing Al content. Finally, a fully transparent dual-channel layered IAZO TFT was prepared with an ITO-glass substrate, and a high optical transparency of 90 %, small VTH of 0.04 V, and high μFE of 39.7 cm2/Vs were achieved for applications in the field of transparent displays.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.