IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.最新文献

{"title":"AlGaAs/GaAs Heterojunction Bipolar Transistors For Power Applications","authors":"B. Bayraktaroglu, N. Camilleri, H. Tserng","doi":"10.1109/CORNEL.1987.721236","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721236","url":null,"abstract":"Heterojunction bipolar transistors (HBT) are one of the most promising modern devices for the needs of present microwave and millimeter wave systems. Not only do HBTs offer high frequency operation capability [l-31 but a l s o they have the potential for several fold increase in power and packing density coimpared to FETs[4]. The superior performance of HBTs at high frequencies over conventional Si homojunction bipolar transistors originate from the use of a heterojunction at the emitter-base interface. In this way, the device can produce current gains even when the base layer is substantially higher doped than the emitter. Resulting low base resistance and smaller emitter charging time constant improves high frequency operation of the transistor. The use of GaAs with its higher electron mobility and semiinsulating (SI) substrate properties further enhances this performance.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115057760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A New Method To Detect Ballistic Electrons In GaAs","authors":"E. Brown, W. Goodhue","doi":"10.1109/CORNEL.1987.721243","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721243","url":null,"abstract":"Recently there has been great interest in structures designed to study the transport properties of electrons in n-GaAs. This follows years of theoretical and experimental effort aimed at developing ultra-high speed devices that utilize ballistic (collisionless) motion of electrons over short distances. While there has been little doubt that ballistic or at least quasi-ballistic motion occurs, the question has often arisen whether or not a sufficient fraction of the electron population remains ballistic over the length scale and at the carrier concentrations found in useful devices. Perhaps the most notable experiment to address this issue utilized a structure in which electrons are injected through a thin heterobarrier by tunneling and are collected by the high-pass (in energy) filtering action of a second, thicker heteroban-ier.' This experiment determined that about 50% of the electrons move quasi-ballistically through a 30-nm base region doped 1x10l8 ~rn-~. A similar structure using planar-doped barriers led to the conclusion that the ballistic mean free paths in n+ GaAs are a few hundred angstroms? in basic agreement with the former experiment. More recently the collector has been replaced by a double-barrier, resonanttunneling structure that passes only electrons in a narrow energy range, and spectrometric measurements were made on p-type mate~ial.~ In this paper we present a device in which both the analyzer and collector are double-barrier (DB) structures through which the electrons can tunnel with high probability. Fully ballistic electrons can tunnel through the entire structure and are thus detectable by measuring resonances in the I-V and its derivative curve. As we will see below, dramatic resonant-tunneling effects have been observed even at room temperature. The present structure, shown schematically in Fig. l(a), consists of a pair of GaAs/AlAs DB structures separated by a uniform interaction region of GaAs. Three samples were grown for the present study, with interaction region lengths of 25, 50 and 100 nm. In each sample, the interaction region was doped n-type 2x1017 cm-3 and the AlAs barrier and well regions were nominally undoped. The structures were grown by molecular beam epitaxy at 560 \"Cy and individual mesa devices were fabricated by a standard sequence of steps. This included patterning of Ni/Ge/Au layers into dots on the epitaxial side of the wafer, followed by alloying of these layers with the GaAs to make Ohmic contacts. The individual mesas were defined by ion beam etching using the patterned metal as a mask. All of the I-V and dI/dV measurements were made on 8-pm-diameter mesas with a commercial probe station that enabled temperature reduction to about 85 K.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130690300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Power-Added Efficiency Measured At 1.3 And 20 Ghz Using a GaAs Permeable Base Transistor*","authors":"K. Nichols, M. Hollis, C. Bozler, M. Quddus, L. Kushner, R. Mathews, A. Vera, S. Rabe, R. A. Murphy","doi":"10.1109/CORNEL.1987.721241","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721241","url":null,"abstract":"Excellent power-added efficiencies of 66%, 41%, and 45% have been obtained from GaAs permeable base transistors (PBTs) operating at 1.3, 20, and 22 GHz, respectively. A gain of over 13 dB was measured at 1.3 GHz when the transistor was operating at its peak power-added eff iciency of 66%, which is roughly 5% better than that for the power transistors commonly used at these frequencies. Power measurements at 20 GHz have shown a power-added efficiency of 41 % with an associated gain of 7.3 dB and at 22 GHz a power-added efficiency of 45% with an associated gain of 6.2 dB. These power-added efficiencies, which have been obtained for PBTs not optimized for power, match the best results near 20 GHz for any device.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131111269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic Layer Epitaxy","authors":"S. Bedair","doi":"10.1109/CORNEL.1987.721219","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721219","url":null,"abstract":"","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122093800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microwave Operation Of Heterostructure Isolated-Gate FETs","authors":"G. Menk, R. Sadler, M. Balzan, A. Geissberger, I. Bahl, H. Lee","doi":"10.1109/CORNEL.1987.721222","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721222","url":null,"abstract":"Heterostructure Isolated-Gate Field-Effect Transistors (HIGFETs) have for the first time been operated at microwave frequencies. These enhancement-mode devices are fabricated by a refractory self-aligned gate process using undoped MBE-grown heterostructures employing an AlGaAs gate isolation layer. A planarization process with Au-based overlay metallization is used to reduce the gate resistance. Microwave S-parameter and noise measurements have been made on the devices from I to 15 GHz. At 10 GHz, noise figure values of 2.0 to 2.2 dB with associated gain of 6.8 to 7.0 dB have been measured for nonoptimized 1 /spl mu/m-gate HIGFETs.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134345616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microwave Performance Of Single-gate And Dual-gate Modfets Using Double Hetero'unction Modulation-doped Structures","authors":"Y. Chen, G. W. Wang, D. Radulescu, A. Lepore, P. Tasker, L. Eastman","doi":"10.1109/CORNEL.1987.721212","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721212","url":null,"abstract":"1.2-/spl mu/m and 0.3-/spl mu/m gate length n+-GaAs/InGaAs/n+-AlGaAs Double Heterojunction Modulation-Doped Field-Effect Transistors (DH-MODFETs)have been fabricated with single and dual controlling gate electrodes. Extrinsic DC transconcluclance of 500 mS/mm has been achieved for a 0.3-/spl mu/m single-gate FET. The device also has an f/sub T/ of 43 GHz and 14 dB Maximum Stable Gain (MSG) at 26 GHz with the stability factor (k) as low as 0.6 from the small signal s-parameter measurements from 0.5 to 26.5 GHz. Dual gate FETs fabricated on the same wafer demonstrate higher gain at low frequencies, but the gain decreases rapidly at high frequencies with the stability factor reaching unity at a rate faster than that single-gate DH-MODFETs. Distinctive power gain roll-off slopes of -3, -6, and -12 dB/octave have been observed forthe dual-gate MODFETs.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131407981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation Of Low Temperature Ohmic Contacts To GaAs MESFETs And GaAs/AlGaAs MODFETs","authors":"G. Cibuzar","doi":"10.1109/CORNEL.1987.721231","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721231","url":null,"abstract":"","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123111040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Study Of Charge Control In n- And p-type Lattice Matched And Strained Channel MODFETs With GaAs And InP Substrates","authors":"M. Jaffe, Y. Sekiguchi, J. Singh, Y. Chan, D. Pavlidis, M. Quillec","doi":"10.1109/CORNEL.1987.721215","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721215","url":null,"abstract":"A general charge control model has been developed to understand the performance of n-type and p-type MODFETs with strained active channels. The effects of strain on material properties are modeled via a tight binding formalism for n-type devices and the Kohn Luttinger hamiltonian for p-type devices and the resultant parameters are used within a self consistent solution of the Poisson equation and the Schrodinger equation. The effect of strain on carrier masses, sheet charge density, and subband occupation are discussed. Some experimental results on the strained n-type InGaAs/InAlAs (on InP substrate) MODFETs are also presented.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121491135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Speed Quarter Micron Buried-channel MESFETs With Improved Output Characteristics For Analog Applications","authors":"P. Canfield, J. Medinger, D. Allstot, L. Forbes, A.J. McCamant, B.A. Vetanen, B. Odekirk, E.P. Finchen, K. Gleason","doi":"10.1109/CORNEL.1987.721234","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721234","url":null,"abstract":"GaAs MESFET technology is based in large part upon ion-implantation into The substrates are rendered semi-insulating due semi-insulating substrates. to the presence of a large concentration of electrically active deep level defects which act to compensate the material. wafers the dominate deep level is EL2, and the EL2 associated family of 17 defects. It has been shown, however, that incorporation of greater than 10 donor atoms neutralizes the EL2 defect C11. Therefore, it should be possible to build devices which are essentially free of carrier trapping in the channel of MESFETs by these deep levels. However, carriers near the channelsubstrate interface will be subject to trapping since they can be scattered into the substrate and trapped by EL2 and other defects until they are thermally emitted. behavior of the device by changing the channel-substrate space charge distribution. Likewise, surface states or defects near the surface can trap carriers and influence device behavior. In nominally undoped GaAs","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132566893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Large-signal Time-domain Simulation Of Millimelter-wave Transistors","authors":"P. Blakey","doi":"10.1109/CORNEL.1987.721209","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721209","url":null,"abstract":"INTRODUCTION It is well established that conduction elecmns in submicron devices can experience significant velocity overshoot, and can travel hna-device distances with picosecond transit times. A variety of novel transistor concepts, some involving heterojunctions or superlamces, have been proposed to take advantage of this. Such devices are often referred to generically as ’ballistic’ transistors. Simple analyses invariably predict excellent millimeter-wave and submillimeter-wave performance for ballistic transiston. These performance projections have generated widespread excitement and publicity. Articles about ballistic transistors have appeared in publications as diverse as IEEE Spectrum and the Wall Street Journal. Predictions that ballistic trans~~tors will soon operate at 500 GHz are common (e.g. [I]). and fresuency projections as high as 10 THz have appeared [2]. This paper articulates a different view of the performance potential of ‘ballistic’ transistors: that the excitement and optimism is clearly excessive. The paper has two parts. The fint part outlines why the ambitious published performance projections are much too optimistic. The second part presents an overview of the issues, techniques and problem involved in using large-signal time-domain simulation to obtain more realistic performance projections.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133512097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}