在1.3 Ghz和20 Ghz使用GaAs可渗透基极晶体管测量的高功率附加效率*

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI:10.1109/CORNEL.1987.721241

K. Nichols, M. Hollis, C. Bozler, M. Quddus, L. Kushner, R. Mathews, A. Vera, S. Rabe, R. A. Murphy

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引用次数: 7

摘要

从工作频率分别为1.3 GHz、20 GHz和22 GHz的GaAs可渗透基极晶体管(pbt)中获得了66%、41%和45%的优异功率增加效率。当晶体管工作在其66%的峰值功率增加效率时，在1.3 GHz测量到超过13 dB的增益，这比在这些频率下通常使用的功率晶体管大约好5%。在20 GHz的功率测量显示，功率增加效率为41%，相关增益为7.3 dB;在22 GHz的功率增加效率为45%，相关增益为6.2 dB。这些功率增加的效率是在未针对功率进行优化的pbt上获得的，与任何设备在20 GHz附近的最佳结果相匹配。

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High Power-Added Efficiency Measured At 1.3 And 20 Ghz Using a GaAs Permeable Base Transistor*

Excellent power-added efficiencies of 66%, 41%, and 45% have been obtained from GaAs permeable base transistors (PBTs) operating at 1.3, 20, and 22 GHz, respectively. A gain of over 13 dB was measured at 1.3 GHz when the transistor was operating at its peak power-added eff iciency of 66%, which is roughly 5% better than that for the power transistors commonly used at these frequencies. Power measurements at 20 GHz have shown a power-added efficiency of 41 % with an associated gain of 7.3 dB and at 22 GHz a power-added efficiency of 45% with an associated gain of 6.2 dB. These power-added efficiencies, which have been obtained for PBTs not optimized for power, match the best results near 20 GHz for any device.

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IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.

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