{"title":"Network analysis of the influence of hardware imperfections on DoA estimation","authors":"M. Stefer, S. Kablitz, M. Schneider","doi":"10.23919/EUMC.2012.6459129","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459129","url":null,"abstract":"In this paper, a framework is established to quantify the influence of hardware imperfections realizing a Direction-of-Arrival (DoA) estimation system using a circular antenna array. The latter exploits one transceiver and therefore samples the different antennas sequentially. To accomplish this, a Single-Pole-Multifold-Throw (SPMT) switch is needed to connect antennas and transceiver. Describing the different components by their respective scattering parameter matrices, the aforementioned framework is assembled. It can be demonstrated that hardware imperfections such as finite isolation and finite matching perturb the original pattern of every single antenna element within the array. Furthermore, a calibration algorithm is successfully applied to compensate for the pattern perturbation introduced by the hardware imperfections.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"765 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116135450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Dispenza, A. Secchi, S. Casagrande, M. Ricci, A. Fiorello
{"title":"A novel configuration for optical SSB modulation","authors":"M. Dispenza, A. Secchi, S. Casagrande, M. Ricci, A. Fiorello","doi":"10.23919/EUMC.2012.6459178","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459178","url":null,"abstract":"In the framework of development of architectures and components for advanced modulation schemes a novel approach for Single Side Band modulation has been proposed and the device has been realized and tested. It provides numerous advantages with respect to already proposed approaches, in term of design complexity and reduced need for external components (phase shifters, beam splitter) for pre-processing of the RF signal to be fed to the modulator. Results of fabrication and preliminary characterization of the device are presented.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125124871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A calibration system for the Green Bank Telescope 4mm receiver: On-telescope, RFI-free calibration for 68–92 GHz observations","authors":"G. Watts","doi":"10.23919/EUMC.2012.6459339","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459339","url":null,"abstract":"Calibration for spectral line observations covering 68-92 GHz on the Green Bank Telescope uses a different calibration scheme than lower frequency receivers. In addition and extremely important is that any calibration scheme must not generate radio frequency interference (RFI) to other experiments ongoing at the Green Bank Observatory. An asynchronous logic network interfaces between the telescope control system, a brushless AC motor and three bit position encoding to place or remove reflectors, absorber or a quarter wave plate in the beam of the feeds to enable observers to calibrate their data during observations or configure the receiver for Very Long Baseline Interferometer network observations. This system is free of RFI that schemes utilizing more commonly available technology create.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129626722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. M. Elelimy, A. El-Tager, A. Sobih, M. Abdel-Azeem
{"title":"Novel compact dual-mode tri-band bandpass filter for WiMAX & GSM applications","authors":"A. M. Elelimy, A. El-Tager, A. Sobih, M. Abdel-Azeem","doi":"10.23919/EUMC.2012.6459161","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459161","url":null,"abstract":"This paper presents a novel, compact size planar microstrip tri-band BPF designed to produce three passbands for WiMAX and GSM applications. The tri-band BPF center frequencies are 900 MHz, 2.45 GHz and 3.5 GHz. A design methodology as well as design guidelines are proposed based on cross-coupled resonators to produce tri-section stepped-impedance resonators for the second and third passbands and dual-mode resonators for the first and second passbands. This novel tri-band BPF is simulated, optimized, fabricated and measured. Filter measurements are in very good agreement with simulations which verifies this novel idea as well as the proposed design procedure. The fabricated filter provides better size reduction and at the same time performs superior enhancement in insertion losses and keeps adequate passbands compared to other published tri-band microstrip filters.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129665750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the impact of timing mismatch and memory length on digital predistortion systems","authors":"M. Hoflehner, A. Springer","doi":"10.23919/EUMC.2012.6459210","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459210","url":null,"abstract":"Nonlinear power amplifiers (PAs) are commonly linearized by means of digital predistortion (DPD). To identify the predistorter, the input and output signals of the PA are compared. We analyze the impact of a delay mismatch between PA input and output signal on DPD system performance. Using various simulations and measurements, we examine the relation between the memory length of the DPD system and the delay of the PA. We will show that - up to a certain point - delay overestimation can be compensated for by the memory of the predistorter without performance degradation.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132313923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interaction of time-varying airy pulses with a layer","authors":"A. Nerukh, D. Zolotariov, D. Nerukh","doi":"10.23919/EUMC.2012.6459299","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459299","url":null,"abstract":"Pulses with an envelope in the form of the Airy function are obtained using Green's functions in 1D and 2D in time domain. Interaction of such pulses with a dielectric layer is investigated and expressions for reflected and transmitted pulses are obtained.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130820033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Saad, L. Piazzon, P. Colantonio, J. Moon, F. Giannini, K. Andersson, Bumman Kim, C. Fager
{"title":"Multi-band/multi-mode and efficient transmitter based on a Doherty Power Amplifier","authors":"P. Saad, L. Piazzon, P. Colantonio, J. Moon, F. Giannini, K. Andersson, Bumman Kim, C. Fager","doi":"10.23919/EUMC.2012.6459424","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459424","url":null,"abstract":"This paper presents the design of a high peak efficiency dual-band power amplifier (PA) and how it is adopted as basic cell to implement a high average efficiency Doherty PA (DPA), achieving a dual-band/multi-mode and efficient transmitter concurrently operating at 1.8GHz and 2.4 GHz. From the dual-band PA, an average PAE of 25% has been experimentally obtained, when exited with concurrent 10MHz LTE and WiMAX signals. When using this PA as a basis for a dual band Doherty PA, the average PAE is improved (by 9 percentage units) to 34%. An adjacent channel leakage ratio (ACLR) lower than -46.5 dBc and -46.0 dBc has been fulfilled from PA and DPA, respectively, using a standard digital linearization technique.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131258393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Reyaz, C. Samuelsson, R. Malmqvist, M. Kaynak, A. Rydberg
{"title":"Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology","authors":"S. Reyaz, C. Samuelsson, R. Malmqvist, M. Kaynak, A. Rydberg","doi":"10.23919/EUMC.2012.6459170","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459170","url":null,"abstract":"This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125367397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Diagonally shifted coupled lines with adjacent ground through-holes on uncrossed signal line ends","authors":"T. Yuasa, Y. Tahara, T. Owada, N. Yoneda","doi":"10.23919/EUMC.2012.6459194","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459194","url":null,"abstract":"This paper presents a broadside coupler using diagonally shifted coupled lines with adjacent ground through-holes on uncrossed signal line ends. The ground through-holes can generate additional capacitance between signal line and ground which is an effective compensating element for parasitic capacitance around crossed signal lines on an opposite end of the coupled line. The validity of the proposed coupler has been demonstrated by the simulation and measurement results.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113965558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Embedded IC module package using silicon substrate","authors":"J. Yook, J. C. Kim, Dongsu Kim, Jongchul Park","doi":"10.23919/EUMC.2012.6459213","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459213","url":null,"abstract":"In this paper, an embedded passive and active package is developed by using silicon substrates. Embedded passives are integrated on the silicon substrate by using standard thin-film processes, and active devices are embedded in the silicon using cavity structures. An organic lamination process is used for filling the gap between IC and silicon. Signal vias are realized by using UV laser drilling. To demonstrate the process technology, three active ICs, a SPDT, SP3T switch and a LNA, are embedded in the silicon cavity depth of 160 μm and thin film MIM capacitors and spiral inductors for DC blocking or impedance matching are integrated in the substrate. The size of implemented switch LNA module is only 3.8×1.7×0.22 mm3. The measured insertion loss of the SPDT and SP3T switch was 0.49 dB and 0.8 dB at 2.45 GHz respectively and its application frequency of the SPDT switch is improved by 6 GHz due to low parasitic effect. The gain of the switch LNA module is 24 dB at the pass band.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"48 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114131789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}