Embedded IC module package using silicon substrate

In this paper, an embedded passive and active package is developed by using silicon substrates. Embedded passives are integrated on the silicon substrate by using standard thin-film processes, and active devices are embedded in the silicon using cavity structures. An organic lamination process is used for filling the gap between IC and silicon. Signal vias are realized by using UV laser drilling. To demonstrate the process technology, three active ICs, a SPDT, SP3T switch and a LNA, are embedded in the silicon cavity depth of 160 μm and thin film MIM capacitors and spiral inductors for DC blocking or impedance matching are integrated in the substrate. The size of implemented switch LNA module is only 3.8×1.7×0.22 mm3. The measured insertion loss of the SPDT and SP3T switch was 0.49 dB and 0.8 dB at 2.45 GHz respectively and its application frequency of the SPDT switch is improved by 6 GHz due to low parasitic effect. The gain of the switch LNA module is 24 dB at the pass band.