Eighth International Conference on Ultrafast Phenomena最新文献_第8页

Generation of pairs of solitons in an all-fibre, femtosecond soliton source 全光纤飞秒孤子源中孤子对的产生

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1007/978-3-642-84910-7_68

D. Richardson, V. V. Afanasjev, A. Grudinin, D. Payne

引用次数: 0

Femtosecond Infrared Spectroscopic Studies of Protein Dynamics 蛋白质动力学的飞秒红外光谱研究

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1364/up.1992.wa1

R. Hochstrasser

引用次数: 0

Ultrafast Recovery of Hetero n-i-p-i's by Enhanced In-plane Diffusive Transport 利用增强面内扩散输运法超高速恢复杂态n-i-p-i

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1364/up.1992.thc19

A. Smirl, D. McCallum, A. N. Cartwright, X. R. Huang, T. Boggess, T. Hasenberg

{"title":"Ultrafast Recovery of Hetero n-i-p-i's by Enhanced In-plane Diffusive Transport","authors":"A. Smirl, D. McCallum, A. N. Cartwright, X. R. Huang, T. Boggess, T. Hasenberg","doi":"10.1364/up.1992.thc19","DOIUrl":"https://doi.org/10.1364/up.1992.thc19","url":null,"abstract":"Hetero n-i-p-i's are one of several semiconductor quantum-well devices that use second-order electro-optic effects and that continue to attract interest for possible applications to low-power two-dimensional switching arrays and all-optical spatial light modulators. The turn-on time for a hetero n-i-p-i device is usually determined by transport perpendicular to the quantum wells. More specifically, it is determined by the time required for carriers generated in the quantum wells to escape the wells and to move to screen the built-in electric field, thus shifting the exciton. Consequently, typical turn-on times are of the order of a few ps. By contrast, when used in the conventional single-beam geometry, the recovery (or turn-off) time of hetero n-i-p-i's is determined by the slow recombination of the spatially-separated charges in the doped regions and is typically in the range of µs-ms. If instead, however, we use a two-beam mixing geometry for the device (where gratings are written in the material by the interference of the two beams), then the decay or turn off of the signal is determined by the decay of the gratings by in-plane transport over micron dimensions. Here, we use transient grating techniques to measure the recovery of such photorefractive and photoabsorptive gratings written in all-binary hetero n-i-p-i's. In this geometry, we show that the separation of photo-generated charge actually speeds the recovery by enhancing the effective in-plane ambipolar diffusion coefficient by roughly an order of magnitude (in contrast to the single beam geometry where charge separation elongates the recombination and recovery time).","PeriodicalId":242710,"journal":{"name":"Eighth International Conference on Ultrafast Phenomena","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122822764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Molecular Processes in the Primary Reaction of Photosynthetic Reaction Centers 光合反应中心初级反应的分子过程

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1007/978-3-642-84910-7_171

W. Zinth, C. Lauterwasser, U. Finkele, P. Hamm, S. Schmidt, W. Kaiser

引用次数: 1

Ultrafast Nonlinear Refraction in Semiconductor Laser Amplifiers 半导体激光放大器中的超快非线性折射

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1007/978-3-642-84910-7_136

M. Sheik-Bahae, E. W. Stryland

引用次数: 0

Plasmon-Phonon Coupling and Hot Carrier Relaxation in GaAs and Low Temperature Grown GaAs GaAs和低温生长GaAs中的等离子体-声子耦合和热载流子弛豫

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1007/978-3-642-84910-7_127

R. I. Devlen, J. Kuhl, K. Ploog

引用次数: 0

Ultrafast Dynamics of Femtosecond Laser-Produced Plasmas 飞秒激光等离子体的超快动力学

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1364/up.1992.tue2

T. Engers, H. Schüler, H. Schulz, D. von der Linde

引用次数: 0

Wave Packet Interferometry and Other Applications of Phase Locked Femtosecond Pulses 波包干涉测量及锁相飞秒脉冲的其他应用

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1364/up.1992.thd3

G. Fleming, N. Scherer, M. Cho, A. Matro, J. Cina

引用次数: 0

High-Sensitivity Picosecond-Response InxGa1-xAs Photodetectors 高灵敏度皮秒响应InxGa1-xAs光电探测器

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1364/up.1992.fc26

S. Gupta, J. Whitaker, S. Williamson, P. Ho, J. Mazurowski, J. Ballingall

{"title":"High-Sensitivity Picosecond-Response InxGa1-xAs Photodetectors","authors":"S. Gupta, J. Whitaker, S. Williamson, P. Ho, J. Mazurowski, J. Ballingall","doi":"10.1364/up.1992.fc26","DOIUrl":"https://doi.org/10.1364/up.1992.fc26","url":null,"abstract":"For ultrafast optoelectronic applications, photoconductors with sub-picosecond carrier lifetimes and low dark current are desired. Previous work has demonstrated the dramatic reduction in the carrier lifetime by lowering the growth temperature to ~200°C in molecular-beam-epitaxial (MBE) GaAs layers [1]. Optical transmission and reflection measurements, and photoconductive switching measurements have confirmed the sub-picosecond carrier lifetime in this material. In addition, the semi-insulating nature and high breakdown voltage of these layers has enabled the fabrication of submicron interdigitated photodetectors and optical correlators having an unprecedented bandwidth of 375 GHz and responsivity of ~ 0.1 A/W [2]. The excess-As incorporation during the low-temeprature MBE growth is believed to lead to the above properties [3], hence this approach of low-temperature growth should be applicable to other As-based materials. In particular, the ternary compound InxGa1-xAs is an important direct band-gap material for the long wavelength region, and with this in mind we investigate the ultrafast carrier dynamics and applications of low-temperature MBE grown InxGa1-xAs epilayers.","PeriodicalId":242710,"journal":{"name":"Eighth International Conference on Ultrafast Phenomena","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134447503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Features of the Dual Fluorescence of 4-N,N-dialkylaminoalkylbenzoates in Alkanes 烷烃中4-N, n -二烷基氨基烷基苯甲酸酯的双荧光特征

Eighth International Conference on Ultrafast Phenomena Pub Date : 1900-01-01 DOI: 10.1007/978-3-642-84910-7_205

M.C.C. de Lange, D. Leeson, A. Huizer, C. Varma

引用次数: 0