2008 IEEE International Conference on Electron Devices and Solid-State Circuits最新文献_第2页

Cascaded classification for hardware face detection 级联分类硬件人脸检测

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760695

I. Zheng, Xiaoxiao Zhang, F. Flitti, A. Bermak

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引用次数: 2

Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer 采用AlOxNy或TaOxNy中间层增强HfTaOxNy栅极介质的Si MOS电容器性能

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760738

C.X. Li, X.F. Zhang, J. Xu, P. Lai

引用次数: 2

Statistical modeling of layout-dependent characteristic fluctuations for multi-finger MOSFETs 多指mosfet布局相关特性波动的统计建模

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760677

Chulhyun Park, J. Kang, Seong-ook Jung, Ilgu

引用次数: 2

Cross-sectional shape effects on the electronic properties of Silicon nanowires 截面形状对硅纳米线电子性能的影响

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760704

R. Sajjad, S. Bhowmick, Q. Khosru

{"title":"Cross-sectional shape effects on the electronic properties of Silicon nanowires","authors":"R. Sajjad, S. Bhowmick, Q. Khosru","doi":"10.1109/EDSSC.2008.4760704","DOIUrl":"https://doi.org/10.1109/EDSSC.2008.4760704","url":null,"abstract":"The electronic properties of Silicon nanowires are studied using empirical tight binding sp3d5s* model for three different cross-sectional shapes - square, circular and triangular. For two different growth directions <100> and <110>, it is observed that the electron effective masses at the Gamma point is lowest for triangular wire. The conduction band valley splitting at the Gamma point for <100> wire is higher for triangular wire compared to the other two shapes. The valence bands are more degenerate for circular wire than the other two and their splitting is highest for square wire. Hole effective mass at the valence band maxima for <100> wire is significantly lower for triangular wire than that of the other two shapes which show large increase in hole effective mass as a result of quantum confinement. These electronic properties are compared against same cross-section area which is varied from 0-30 nm2. The energy band gap shows no variation due to wire shape. It only depends on cross-section area. Variations in the electronic properties due to shape diminish gradually as cross-sectional area is increased.","PeriodicalId":234055,"journal":{"name":"2008 IEEE International Conference on Electron Devices and Solid-State Circuits","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129417802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET’s 短沟道三材料栅极堆SOI MOSFET的二维解析模型

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760750

T. Chiang

引用次数: 1

Terahert detection analysis of nanowire gated field effect transistor 纳米线门控场效应晶体管的太赫兹检测分析

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760659

Yu Chen, Jin He, Xuehao Mu, H. Lou, Lining Zhang, Yan Song

引用次数: 0

A high reliability CMOS implantable interface for wireless neural recording microsystem 一种用于无线神经记录微系统的高可靠性CMOS植入式接口

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760664

Hongge Li, Youguang Zhang

引用次数: 0

High frequency low cost CMOS LNA design procedure for the wireless industry 用于无线行业的高频低成本CMOS LNA设计程序

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760669

A. Ahmed, J. Wight

引用次数: 4

Low-leakage and low-power implementation of high-speed 65nm logic gates 高速65nm逻辑门的低漏、低功耗实现

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760641

Tsung-Yi Wu, L. Lu, Cheng-Hsun Liang

引用次数: 6

Self-clamping thyristor mode LIGBT based on SOI 基于SOI的自箝位晶闸管模式light

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760675

G. Xie, Bo Zhang

引用次数: 0