Ukrainian Journal of Physics最新文献

{"title":"Entanglement Dynamics Induced by a Three-Level Laser Coupled to the Squeezed Vacuum Reservoir","authors":"M. Alemu","doi":"10.15407/ujpe68.5.295","DOIUrl":"https://doi.org/10.15407/ujpe68.5.295","url":null,"abstract":"We have studied the squeezing and entanglement properties of the light induced by a three-level laser coupled to the squeezed vacuum reservoir. Applying the pertinent master equation, we have obtained the evolution equations for the cavity mode variables. Using the solutions of the resulting equations, the squeezing properties, entanglement amplification, and the normalized second-order correlation function of the cavity radiation are described. We have seen that the light generated by a three-level laser is in a squeezed state, and the squeezing occurs in the plus quadrature. In addition, we have also established that the effect of the squeezed parameter increases the mean and variance of the photon number. It is found that the squeezing and entanglement in the two-mode light are directly related. As a result, an increase in the degree of squeezing directly leads to an increase in the degree of entanglement and vice versa. This shows that, whenever there is squeezing in the two-mode light, there exists an entanglement in the system.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42030495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Raman Scattering Spectra and DFT Computational Analyzes of Intermolecular Interactions in Trifluoroacetic and Its Solutions","authors":"A. Jumabaev, A. Absanov, H. Hushvaktov, L. Bulavin","doi":"10.15407/ujpe68.4.246","DOIUrl":"https://doi.org/10.15407/ujpe68.4.246","url":null,"abstract":"In this work, the mechanisms of molecular clusters formation in liquid trifluoroacetic acid were studied using Raman scattering spectra in different solutions. The polarized components of Raman scattering spectra corresponding of the C=O, O–H stretching bands of pure trifluoroacetic acid consist of three broad bands at 1734, 1754, and 1800 cm−1 with different depolarization ratios. When the acid is strongly dissolved in acetonitrile, the 1800 cm−1 spectral band belonging to the C=O band remains. The intermolecular interactions in the formation of trifluoroacetic acid monomer, dimer, and trimer, as well as clusters with water [CF3COOH + (H2O)n, n = 1–7] and acetonitrile [CF3COOH + (CH3CN)n, n = 1–2] molecules, were analysed using the density functional theory (DFT) method.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47023085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Світловий тиск на наночастинки у полі зустрічних біхроматичних хвиль з додатковим каналом релаксації населеності збудженого стану","authors":"V.I. Romanenko, N.V. Kornilovska, L.P. Yatsenko","doi":"10.15407/ujpe68.4.219","DOIUrl":"https://doi.org/10.15407/ujpe68.4.219","url":null,"abstract":"Розглянуто силу свiтлового тиску на наночастинки, що мiстять домiшки атомiв або центри забарвлення, якi резонан-сно взаємодiють з полем. Наявне кристалiчне оточення у загальному випадку унеможливлює формування дворiвневої схеми взаємодiї атома або центра забарвлення з полем завдяки зняттю заборони на частину переходiв зi спонтанним випромiнюванням. У результатi частина атомiв перебуває у станах, якi не взаємодiють з полем лазерного випромiнювання, але якi з часом релаксують до основного стану. Побудовано теорiю, яка дозволяє розрахувати силу свiтлового тиску на атоми чи центр забарвлення (i, вiдповiдно, на наночастинку, в якiй вони перебувають) у залежностi вiд параметрiв їхньої взаємодiї з полем та параметрiв релаксацiї збудженого стану i промiжних станiв. Для вивчення впливу рiзних факторiв на силу свiтлового тиску розрахунки проведенi для модельної сукупностi параметрiв, а також для параметрiв, якi визначають взаємодiю тризарядних iонiв ербiю у допованих ним кристалах Y2SiO5 та центрiв забарвлення, що виникають завдяки розташуванню атомiв кремнiю в дефектах кристала алмазу. Як виявилося, завдяки центрам забарвлення можна на кiлька порядкiв пiдняти силу тиску свiтла на малi, значно меншi за довжину хвилi, наночастинки.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48617922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Роль олова у формуванні мікро- і наноструктури поверхні шаруватих плівок Si–Sn–Si","authors":"V.B. Neimash, P.E. Shepelyavyi, A.S. Nikolenko, V. Strelchuk, V.I. Chegel, I.V. Olkhovyk, S. Voronov","doi":"10.15407/ujpe68.4.284","DOIUrl":"https://doi.org/10.15407/ujpe68.4.284","url":null,"abstract":"Методи Раманiвської спектроскопiї, растрової електронної мiкроскопiї, атомно-силової мiкроскопiї i рентґено-флуоресцентного мiкроаналiзу застосованi з метою дослiдження впливу олова на форму i розмiри мiкро- та наноструктури поверхнi шаруватих плiвок Si–Sn–Si, а також на утворення в них нанокристалiв Si пiд час iндукованої оловом кристалiзацiї аморфного кремнiю. В данiй роботi вирiшувалися задачi експериментальної оцiнки ефективностi формування нанокристалiв Si в плiвках Si–Sn–Si, а також визначення форм i масштабiв шорсткостi поверхнi плiвок, мiкророзподiлу домiшок по їх площi i перерiзу. Експериментально пiдтверджено можливiсть формування нанокристалiв Si масштабу одиниць нанометрiв в бiльшiй частинi об’єму плiвок Si–Sn–Si. Вперше встановлено, що при виготовленнi таких плiвок методом термiчного вакуумного напилення товщина шару олова та її спiввiдношення з шарами кремнiю визначають форму i масштаб перiодичної структуризацiї рельєфу поверхнi, яка важлива для виготовлення реальних електронних приладiв. Головним елементом структурування рельєфу поверхнi плiвок виявилися квазисферичнi утворення дiаметром вiд 20 нм до 2–3 мкм. Зумовлена ними шорсткiсть поверхнi змiнюється в дiапазонi вiд одиниць до кiлькох десяткiв нанометрiв залежно вiд умов осадження шарiв. Форма поверхневих утворень змiнюється вiд гроно-подiбних дендритiв фрактального типу до опуклих елiпсоїдiв i багатокутникiв. Показано, що первинне структурування вiдбувається у виглядi утворення шару пiвсферичних мiкрокрапель олова вже у процесi його осадження. Вторинне структурування вiдбувається на етапi осадження другого шару кремнiю на шар олов’яних пiвсфер. На цьому етапi вiдбувається формування шару аморфного напiвпровiдника на поверхнi рiдинного металу, що дослiджувалось вперше. Отриманий таким чином аморфний кремнiй має порувату структуру, що складається з гроно-подiбних дендритiв фрактального типу масштабу сотень нанометрiв. Найменшi елементи дендритiв теж мають квазисферичну форму дiаметром 20–50 нм. Отриманi результати обговоренi з точки зору можливих застосувань.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44346377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of the Applied Electric Field on the Thermal Properties of the Relativistic Harmonic Oscillator in One Dimension","authors":"A. Boumali, R. Allouani, A. Bouzenada, F. Serdouk","doi":"10.15407/ujpe68.4.235","DOIUrl":"https://doi.org/10.15407/ujpe68.4.235","url":null,"abstract":"We study the relativistic harmonic oscillators (Dirac and Klein–Gordon ones) in a constant external electric field. The solutions obtained are exact. These solutions allowed us to focus on the effect of the external electric field on the thermal properties of such oscillators. These properties are calculated by means of the Zeta-based method. Some figures have been built to show the mentioned effect.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44742538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Розвиток нейтронної рефлектометрії поверхневих шарів рідинних систем","authors":"Y. Kosiachkin, L. Bulavin, P. Kopčanský","doi":"10.15407/ujpe68.4.259","DOIUrl":"https://doi.org/10.15407/ujpe68.4.259","url":null,"abstract":"З метою розвитку методiв нейтронної та рентґенiвської рефлектометрiї для дослiдження поверхневих шарiв рiдинних систем запропоновано метод збiльшення чутливостi рефлектометричного експерименту до появи та еволюцiї приповерхневих шарiв. У зв’язку з цим, проведено тестування багатошарових гетероструктур Ni/Ti щодо практичного застосування квазиоднорiдного пiдходу зi змiною ефективної густини довжини розсiяння рентґенiвського випромiнювання тонких (товщиною до 100 нм) металевих плiвок в рентґенiвських рефлектометричних експериментах на прикладi електрохiмiчних iнтерфейсiв. Структури з надзвичайно малою товщиною двошарової системи Ni/Ti та рiзним спiввiдношенням товщин пiдшарiв нiкелю та титану були синтезованi методом магнетронного напилення. Проаналiзовано дзеркальну вiдбивну здатнiсть рентґенiвського випромiнювання вiд поверхнi гетероструктур для визначення межi можливостi використання квазиоднорiдного наближення.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44326371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Features of the Generation of Energy States in the Lu1 – xVxNiSb Semiconductor","authors":"V. Romaka, V. Romaka, Y. Stadnyk, L. Romaka, Y. Plevachuk, A. Horyn, V. Pashkevych, P. Haraniuk","doi":"10.15407/ujpe68.4.274","DOIUrl":"https://doi.org/10.15407/ujpe68.4.274","url":null,"abstract":"A comprehensive study of the crystal and electronic structures, thermodynamic, kinetic, energy, and magnetic properties of the Lu1−xVxNiSb semiconductor (x = 0÷0.10) has revealed the possibility for impurity V atoms to simultaneously occupy different crystallographic positions. At the same time, defects of the acceptor or donor nature are generated in the crystal structure of the Lu1−xVxNiSb solid solution, and the corresponding energy states appear in the band gap ϵg. The concentration ratio of donor-acceptor states determines the position of the Fermi level ϵF and the mechanisms of electrical conductivity of Lu1−xVxNiSb. The results of the modeling of thermodynamic and transport properties of the semiconductor are consistent with experimental data. Understanding the mechanism of energy state generation in the semiconductor Lu1−xVxNiSb allows the modeling and production of new thermoelectric materials with a high efficiency of converting the thermal energy into the electrical one.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42295089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of Technology for Obtaining Nanosized Heterostructured Films by Ion-Plasma Deposition","authors":"M. T. Normuradov, Sh. T. Khozhiev, K. Dovranov, Kh.T. Davranov, M. Davlatov, F. K. Khollokov","doi":"10.15407/ujpe68.3.210","DOIUrl":"https://doi.org/10.15407/ujpe68.3.210","url":null,"abstract":"The study of films containing narrow-gap semiconductors is a very promising field related to the production of thermal sensors. In this work, we consider the possibility of obtaining the film coatings from silicides of Ba, Na, Ni, Co, Pd, Mn, and P and BaTiO3 using ionplasma methods. The production of film coatings from metal silicides and BaTiO3 on the surface of crystalline silicon and mica and their electronic and X-ray structural characteristics are studied. The dependence of the properties of film coatings on the conditions of the film deposition is determined.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44908384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Theoretical Estimation of Optical, Vibrational and Structural Properties of II–VI Quaternary Alloy Zn0.5Cd0.5SySe1–y","authors":"R.K. Jhakal, M. D. Sharma, U. Paliwal","doi":"10.15407/ujpe68.3.184","DOIUrl":"https://doi.org/10.15407/ujpe68.3.184","url":null,"abstract":"We present a theoretical estimation of optical, vibrational, and structural properties of II–VI semiconducting quaternary alloy Zn0.5Cd0.5SySe1−y for 0 < y < 1 giving total 10 compositions. The estimation of refractive index, elastic constants, bulk modulus, and vibrational frequencies are performed using the important input parameters provided by the empirical pseudopotential method. In this method, the bandgaps are computed, and the alloying effects are modeled through the modified virtual crystal approximation. We have computed the static refractive index, static and high-frequency dielectric constants, longitudinal and transverse optical phonon frequencies, elastic constants, bulk modulus, and cohesive energy for 10 compositions of the alloy. The results are compared to other experimental and theoretical values wherever available.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48006356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and Optical Characterisation of Size-Selected Glutathione-Capped Colloidal Cu–In–S Quantum Dots","authors":"Y. Azhniuk, Ye. O. Havryliuk, B. Lopushanska, V. Lopushansky, A. Gomonnai, D. Zahn","doi":"10.15407/ujpe68.3.190","DOIUrl":"https://doi.org/10.15407/ujpe68.3.190","url":null,"abstract":"Size-selected series of copper-deficient colloidal Cu–In–S quantum dots (QDs) stabilized with glutathione are obtained by the exchange reaction in aqueous solutions under mild synthesis conditions. The optical bandgap and photoluminescence maximum position shift toward higher energies with decreasing QD size. Based on X-ray diffraction data, the QDs are assigned to a tetragonal chalcopyrite-type structure. The average size of QDs, estimated from the Scherrer formula and from the comparison with the absorption edge-based sizing curves, exhibits a fair agreement, being in the interval of 1.2–2.9 nm. The Raman spectra of Cu–In–S QDs are analyzed with the account for the QD structure, confinement-related effects, non-stoichiometry, and possible existence of secondary phases.","PeriodicalId":23400,"journal":{"name":"Ukrainian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.5,"publicationDate":"2023-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44816352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}