Features of the Generation of Energy States in the Lu1 – xVxNiSb Semiconductor

Abstract

A comprehensive study of the crystal and electronic structures, thermodynamic, kinetic, energy, and magnetic properties of the Lu1−xVxNiSb semiconductor (x = 0÷0.10) has revealed the possibility for impurity V atoms to simultaneously occupy different crystallographic positions. At the same time, defects of the acceptor or donor nature are generated in the crystal structure of the Lu1−xVxNiSb solid solution, and the corresponding energy states appear in the band gap ϵg. The concentration ratio of donor-acceptor states determines the position of the Fermi level ϵF and the mechanisms of electrical conductivity of Lu1−xVxNiSb. The results of the modeling of thermodynamic and transport properties of the semiconductor are consistent with experimental data. Understanding the mechanism of energy state generation in the semiconductor Lu1−xVxNiSb allows the modeling and production of new thermoelectric materials with a high efficiency of converting the thermal energy into the electrical one.