Transactions on Electrical and Electronic Materials最新文献

筛选
英文 中文
Enhancing Performance of Perovskite Nanocrystal Light-Emitting Diodes with Perfluorinated Ionomer and PEDOT:PSS 用全氟离子聚合物和 PEDOT:PSS 提高 Perovskite 纳米晶发光二极管的性能
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2024-01-06 DOI: 10.1007/s42341-023-00499-9
Gwangyong Shin, Donghwan Yun, Yeongwoo Ha, Yunhye Jeong, Youngchae Cho, Seungmin Baek, Hyeseon Shin, Vivek Vishal Sharma, Gi-Hwan Kim
{"title":"Enhancing Performance of Perovskite Nanocrystal Light-Emitting Diodes with Perfluorinated Ionomer and PEDOT:PSS","authors":"Gwangyong Shin, Donghwan Yun, Yeongwoo Ha, Yunhye Jeong, Youngchae Cho, Seungmin Baek, Hyeseon Shin, Vivek Vishal Sharma, Gi-Hwan Kim","doi":"10.1007/s42341-023-00499-9","DOIUrl":"https://doi.org/10.1007/s42341-023-00499-9","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"2 8","pages":"1-8"},"PeriodicalIF":1.9,"publicationDate":"2024-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139380769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Facile Strategy to Achieve High Piezoelectric Performance in Electrospun Poly(Vinylidene Fluoride) Non-woven Nanofabrics 实现电纺聚偏氟乙烯非织造纳米织物高压电性能的简便策略
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-12-23 DOI: 10.1007/s42341-023-00495-z
Mohammed Khalifa, Manish Kumar, Gokul Subramanian, S. Anandhan
{"title":"A Facile Strategy to Achieve High Piezoelectric Performance in Electrospun Poly(Vinylidene Fluoride) Non-woven Nanofabrics","authors":"Mohammed Khalifa, Manish Kumar, Gokul Subramanian, S. Anandhan","doi":"10.1007/s42341-023-00495-z","DOIUrl":"https://doi.org/10.1007/s42341-023-00495-z","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"18 11","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139162439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials 探索 4H-SiC MOSFET 的高温可靠性:高 K 栅极电介质材料的比较研究
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-12-20 DOI: 10.1007/s42341-023-00497-x
M. V. Ganeswara Rao, N. Ramanjaneyulu, Sumalatha Madugula, N. P. Dharani, K. Rajesh Babu, Kallepelli Sagar
{"title":"Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials","authors":"M. V. Ganeswara Rao, N. Ramanjaneyulu, Sumalatha Madugula, N. P. Dharani, K. Rajesh Babu, Kallepelli Sagar","doi":"10.1007/s42341-023-00497-x","DOIUrl":"https://doi.org/10.1007/s42341-023-00497-x","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"87 16","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138954281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biological Ferroelectret Property Based on β-Chitin Nanofibrils of Deep-Sea Tubeworms 基于深海管虫 β-甲壳素纳米纤维的生物铁电体特性
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-12-18 DOI: 10.1007/s42341-023-00500-5
Hyunseung Kim, Gyoung-Ja Lee, Yu Ogawa, Yebin Lee, Min-Ku Lee, Changyeon Baek, Chang Kyu Jeong
{"title":"Biological Ferroelectret Property Based on β-Chitin Nanofibrils of Deep-Sea Tubeworms","authors":"Hyunseung Kim, Gyoung-Ja Lee, Yu Ogawa, Yebin Lee, Min-Ku Lee, Changyeon Baek, Chang Kyu Jeong","doi":"10.1007/s42341-023-00500-5","DOIUrl":"https://doi.org/10.1007/s42341-023-00500-5","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"19 6","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139172969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deposited 2D/3D Perovskite Heterojunctions Though Vapor-Assisted Solution Process for Restraining Intermixing Between the Two Phases 通过气相辅助溶液工艺沉积 2D/3D Perovskite 异质结以抑制两相之间的混合
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-12-08 DOI: 10.1007/s42341-023-00498-w
Zhifeng Shang, Yingke Ren, Guoquan Nie, Xilong Ma, Xing Gao
{"title":"Deposited 2D/3D Perovskite Heterojunctions Though Vapor-Assisted Solution Process for Restraining Intermixing Between the Two Phases","authors":"Zhifeng Shang, Yingke Ren, Guoquan Nie, Xilong Ma, Xing Gao","doi":"10.1007/s42341-023-00498-w","DOIUrl":"https://doi.org/10.1007/s42341-023-00498-w","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"90 9","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138586484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs SiNx 钝化层沉积技术对 AlGaN/GaN HEMT 的直流和射频电气特性的影响
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-12-07 DOI: 10.1007/s42341-023-00492-2
Yağmur Güler, Barış Onaylı, M. T. Haliloğlu, D. Yılmaz, T. Asar, Ekmel Özbay
{"title":"Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs","authors":"Yağmur Güler, Barış Onaylı, M. T. Haliloğlu, D. Yılmaz, T. Asar, Ekmel Özbay","doi":"10.1007/s42341-023-00492-2","DOIUrl":"https://doi.org/10.1007/s42341-023-00492-2","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"117 15","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138590620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of the Substitution of Barium by Calcium on the Opto-Electronic Properties of Barium tin Oxide 钙取代钡对氧化钡锡光电特性的影响
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-12-06 DOI: 10.1007/s42341-023-00494-0
F. Z. Gadouche, A. Kabir, S. Siouane, C. Sedrati, A. Bouabellou, G. Schmerber
{"title":"Effect of the Substitution of Barium by Calcium on the Opto-Electronic Properties of Barium tin Oxide","authors":"F. Z. Gadouche, A. Kabir, S. Siouane, C. Sedrati, A. Bouabellou, G. Schmerber","doi":"10.1007/s42341-023-00494-0","DOIUrl":"https://doi.org/10.1007/s42341-023-00494-0","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"39 6","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138596241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Performance of the Double Gate Reverse T-Shaped Channel TFET in Near Visible Light Photodetector 近可见光光电探测器中双栅极反向 T 型沟道 TFET 的光学性能
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-11-30 DOI: 10.1007/s42341-023-00493-1
K. Manikanta, U. Nanda
{"title":"Optical Performance of the Double Gate Reverse T-Shaped Channel TFET in Near Visible Light Photodetector","authors":"K. Manikanta, U. Nanda","doi":"10.1007/s42341-023-00493-1","DOIUrl":"https://doi.org/10.1007/s42341-023-00493-1","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"412 ","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139204045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications 在太赫兹应用中为 3D 集成电路提供合适的芯材,最大限度地减少电信号干扰
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-11-29 DOI: 10.1007/s42341-023-00496-y
Santosh Kumar Tallapalli, V. Vijayakumar, N. Vignesh, Asisa Kumar Panigrahy
{"title":"Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications","authors":"Santosh Kumar Tallapalli, V. Vijayakumar, N. Vignesh, Asisa Kumar Panigrahy","doi":"10.1007/s42341-023-00496-y","DOIUrl":"https://doi.org/10.1007/s42341-023-00496-y","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"76 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139210105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction: Fabrication and Characterization of Carbon Nanotubes-Based Pressure Nanosensors: A Study on Piezoresistive Behavior 更正:基于碳纳米管的压力纳米传感器的制造与表征:压阻行为研究
IF 1.9
Transactions on Electrical and Electronic Materials Pub Date : 2023-11-29 DOI: 10.1007/s42341-023-00491-3
Faiza Khan, Talha Mubashir, Kainat Ahmed, Abdul Mateen, Soonil Lee, Tauseef Ahmed
{"title":"Correction: Fabrication and Characterization of Carbon Nanotubes-Based Pressure Nanosensors: A Study on Piezoresistive Behavior","authors":"Faiza Khan, Talha Mubashir, Kainat Ahmed, Abdul Mateen, Soonil Lee, Tauseef Ahmed","doi":"10.1007/s42341-023-00491-3","DOIUrl":"https://doi.org/10.1007/s42341-023-00491-3","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139212576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信